Theory and practice of SiC growth on Si and its applications to wide-gap semiconductor films SA Kukushkin, AV Osipov Journal of Physics D: Applied Physics 47 (31), 313001, 2014 | 268 | 2014 |
Substrates for epitaxy of gallium nitride: new materials and techniques SA Kukushkin, AV Osipov, VN Bessolov, BK Medvedev, VK Nevolin, ... Rev. Adv. Mater. Sci 17 (1), 1-32, 2008 | 245 | 2008 |
New phase formation on solid surfaces and thin film condensation SA Kukushkin, AV Osipov Progress in surface science 51 (1), 1-107, 1996 | 168 | 1996 |
Thin-film condensation processes SA Kukushkin, AV Osipov Physics-Uspekhi 41 (10), 983, 1998 | 142 | 1998 |
Synthesis of epitaxial silicon carbide films through the substitution of atoms in the silicon crystal lattice: A review SA Kukushkin, AV Osipov, NA Feoktistov Physics of the Solid State 56, 1507-1535, 2014 | 140 | 2014 |
A new method for the synthesis of epitaxial layers of silicon carbide on silicon owing to formation of dilatation dipoles SA Kukushkin, AV Osipov Journal of Applied Physics 113 (2), 2013 | 136 | 2013 |
Processes of condensation of thin films SA Kukushkin, AV Osipov Usp. Fiz. Nauk 168 (10), 1083-1115, 1998 | 126 | 1998 |
Processes of condensation of thin films SA Kukushkin, AV Osipov Usp. Fiz. Nauk 168 (10), 1083-1115, 1998 | 126 | 1998 |
New method for growing silicon carbide on silicon by solid-phase epitaxy: Model and experiment SA Kukushkin, AV Osipov Physics of the Solid State 50, 1238-1245, 2008 | 124 | 2008 |
Stress-driven nucleation of coherent islands: theory and experiment AV Osipov, F Schmitt, SA Kukushkin, P Hess Applied surface science 188 (1-2), 156-162, 2002 | 119 | 2002 |
Epitaxial growth of zinc oxide by the method of atomic layer deposition on SiC/Si substrates SA Kukushkin, AV Osipov, AI Romanychev Physics of the solid state 58, 1448-1452, 2016 | 109 | 2016 |
Raman investigation of different polytypes in SiC thin films grown by solid-gas phase epitaxy on Si (111) and 6H-SiC substrates J Wasyluk, TS Perova, SA Kukushkin, AV Osipov, NA Feoktistov, ... Materials science forum 645, 359-362, 2010 | 84 | 2010 |
Kinetic model of coherent island formation in the case of self-limiting growth AV Osipov, SA Kukushkin, F Schmitt, P Hess Physical Review B 64 (20), 205421, 2001 | 82 | 2001 |
Micro-raman mapping of 3c-sic thin films grown by solid–gas phase epitaxy on si (111) TS Perova, J Wasyluk, SA Kukushkin, AV Osipov, NA Feoktistov, ... Nanoscale research letters 5, 1507-1511, 2010 | 65 | 2010 |
Evolution processes in multicomponent and multiphase films SA Kukushkin Thin Solid Films 207 (1-2), 302-312, 1992 | 56 | 1992 |
Semipolar gallium nitride on silicon: Technology and properties. VN Bessolov, EV Konenkova, SA Kukushkin, AV Osipov, SN Rodin Reviews on Advanced Materials Science 38 (1), 2014 | 50 | 2014 |
Electron-microscopic investigation of a SiC/Si (111) structure obtained by solid phase epitaxy LM Sorokin, NV Veselov, MP Shcheglov, AE Kalmykov, AA Sitnikova, ... Technical Physics Letters 34, 992-994, 2008 | 50 | 2008 |
Disperse Systems on Solid Surfaces SA Kukushkin, VV Slezov Mechanisms of Formation of Thin Films (Evolutionary Approach), 1996 | 48 | 1996 |
First-order phase transition through an intermediate state SA Kukushkin, AV Osipov Physics of the Solid State 56, 792-800, 2014 | 47 | 2014 |
Kinetics of first-order phase transitions in the asymptotic stage SA Kukushkin, AV Osipov Journal of Experimental and Theoretical Physics 86, 1201-1208, 1998 | 44 | 1998 |