Axel Hoffmann 个人学术档案

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引用	22985	4874
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Bruno K MeyerJustus Liebig University Giessen在 mailbox.tu-berlin.de 的电子邮件经过验证
juergen christenProfessor of Physics, Magdeburg University在 ovgu.de 的电子邮件经过验证
Christian ThomsenTU Berlin在 tu-berlin.de 的电子邮件经过验证
Markus R. WagnerPaul-Drude-Institut für Festkörperelektronik在 pdi-berlin.de 的电子邮件经过验证
Gordon CallsenUniversity of Bremen, Institute of Solid State Physics在 ifp.uni-bremen.de 的电子邮件经过验证
Nikolay LedentsovVI Systems GmbH在 v-i-systems.com 的电子邮件经过验证
Ronny KirsteResearch associate, NCSU在 ncsu.edu 的电子邮件经过验证
Matthew R. PhillipsEmeritus Professor of Applied Physics, University of Technology Sydney在 uts.edu.au 的电子邮件经过验证
Sebastian ReparazINSTITUT DE CIÈNCIA DE MATERIALS DE BARCELONA在 icmab.es 的电子邮件经过验证
Christian NenstielTechnische Universität Berlin在 physik.tu-berlin.de 的电子邮件经过验证
Sergey MaksimenkoBelarusian State University, Research Institute for Nuclear Problems, Director在 bsu.by 的电子邮件经过验证
Dagmar GerthsenKIT在 kit.edu 的电子邮件经过验证
Kazumasa HiramatsuMie University, Emeritus Professore在 elec.mie-u.ac.jp 的电子邮件经过验证
Zlatko SitarKobe Steel Distinguished Professor of Materials Science and Engineerign, North Carolina State在 ncsu.edu 的电子邮件经过验证
Wolfgang GehlhoffProf. Dr., Technische Universität Berlin在 sol.physik.tu-berlin.de 的电子邮件经过验证
Dietz NikolausGeorgia State University在 gsu.edu 的电子邮件经过验证
Anna RodinaChief Scientist, Ioffe Institute在 mail.ioffe.ru 的电子邮件经过验证
Andrei SchliwaPrincipal Scientist @ Technische Universität Berlin在 tu-berlin.de 的电子邮件经过验证
Hiroshi AMANO (天野　浩)Nagoya University (名古屋大学)在 nuee.nagoya-u.ac.jp 的电子邮件经过验证
Ramon CollazoProfessor of Materials Science and Engineering, NCSU在 ncsu.edu 的电子邮件经过验证

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Axel Hoffmann

Institute of Solid State Physics, Technical University of Berlin

在 tu-berlin.de 的电子邮件经过验证 - 首页

Semiconductor physics Nanostructures Devices


标题按引用次数排序按年份排序按标题排序	引用次数引用次数	年份
Bound exciton and donor–acceptor pair recombinations in ZnO BK Meyer, H Alves, DM Hofmann, W Kriegseis, D Forster, F Bertram, ... physica status solidi (b) 241 (2), 231-260, 2004	1988	2004
Zinc Oxide: From Fundamental Properties Towards Novel Applications CF Klingshirn, BK Meyer, A Waag, A Hoffmann, J Geurts Springer, 2010	754	2010
Energy relaxation by multiphonon processes in InAs/GaAs quantum dots R Heitz, M Veit, NN Ledentsov, A Hoffmann, D Bimberg, VM Ustinov, ... Physical Review B 56 (16), 10435, 1997	632	1997
Group III nitride semiconductor compounds: physics and applications Clarendon Press, 1998	565*	1998
Nitrogen-related local vibrational modes in ZnO: N A Kaschner, U Haboeck, M Strassburg, M Strassburg, G Kaczmarczyk, ... Applied Physics Letters 80 (11), 1909-1911, 2002	548	2002
Behind the weak excitonic emission of ZnO quantum dots: ZnO/Zn (OH) 2 core-shell structure H Zhou, H Alves, DM Hofmann, W Kriegseis, BK Meyer, G Kaczmarczyk, ... Applied physics letters 80 (2), 210-212, 2002	391	2002
Zone-boundary phonons in hexagonal and cubic GaN H Siegle, G Kaczmarczyk, L Filippidis, AP Litvinchuk, A Hoffmann, ... Physical Review B 55 (11), 7000, 1997	391	1997
Properties of the yellow luminescence in undoped GaN epitaxial layers DM Hofmann, D Kovalev, G Steude, BK Meyer, A Hoffmann, L Eckey, ... Phys. Rev. B 72 (23), 16702, 1995	323	1995
Excited states and energy relaxation in stacked InAs/GaAs quantum dots R Heitz, A Kalburge, Q Xie, M Grundmann, P Chen, A Hoffmann, ... Physical Review B 57 (15), 9050, 1998	321	1998
Development of advanced high heat flux and plasma-facing materials C Linsmeier, M Rieth, J Aktaa, T Chikada, A Hoffmann, J Hoffmann, ... Nuclear Fusion 57 (9), 092007, 2017	307	2017
Exciton fine structure in undoped GaN epitaxial films D Volm, K Oettinger, T Streibl, D Kovalev, M Ben-Chorin, J Diener, ... Physical Review B 53 (24), 16543, 1996	246	1996
Bound excitons in ZnO: Structural defect complexes versus shallow impurity centers MR Wagner, G Callsen, JS Reparaz, JH Schulze, R Kirste, M Cobet, ... Physical Review B—Condensed Matter and Materials Physics 84 (3), 035313, 2011	240	2011
Semiconductor nanostructures D Bimberg Springer, 2008	231	2008
High Si and Ge n-type doping of GaN doping-Limits and impact on stress S Fritze, A Dadgar, H Witte, M Bügler, A Rohrbeck, J Bläsing, A Hoffmann, ... Applied Physics Letters 100 (12), 2012	229	2012
Free excitons in wurtzite GaN AV Rodina, M Dietrich, A Göldner, L Eckey, A Hoffmann, AL Efros, ... Physical Review B 64 (11), 115204, 2001	216	2001
Existence of a phonon bottleneck for excitons in quantum dots R Heitz, H Born, F Guffarth, O Stier, A Schliwa, A Hoffmann, D Bimberg Physical review b 64 (24), 241305, 2001	213	2001
Interrelation of structural and electronic properties in quantum dots using an eight-band model M Winkelnkemper, A Schliwa, D Bimberg Physical Review B—Condensed Matter and Materials Physics 74 (15), 155322, 2006	202	2006
Quantitative determination of hexagonal minority phase in cubic GaN using Raman spectroscopy H Siegle, L Eckey, A Hoffmann, C Thomsen, BK Meyer, D Schikora, ... Solid State Communications 96 (12), 943-949, 1995	198	1995
Gain studies of (Cd, Zn) Se quantum islands in a ZnSe matrix M Strassburg, V Kutzer, UW Pohl, A Hoffmann, I Broser, NN Ledentsov, ... Applied physics letters 72 (8), 942-944, 1998	197	1998
Optical properties of the nitrogen acceptor in epitaxial ZnO A Zeuner, H Alves, DM Hofmann, BK Meyer, A Hoffmann, U Haboeck, ... physica status solidi (b) 234 (3), R7-R9, 2002	196	2002

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