| Tunable GaTe-MoS2 van der Waals p–n Junctions with Novel Optoelectronic Performance F Wang, Z Wang, K Xu, F Wang, Q Wang, Y Huang, L Yin, J He Nano letters 15 (11), 7558-7566, 2015 | 431 | 2015 |
| 2D library beyond graphene and transition metal dichalcogenides: a focus on photodetection F Wang, Z Wang, L Yin, R Cheng, J Wang, Y Wen, TA Shifa, F Wang, ... Chemical Society Reviews 47 (16), 6296-6341, 2018 | 248 | 2018 |
| High-performance, multifunctional devices based on asymmetric van der Waals heterostructures R Cheng, F Wang, L Yin, Z Wang, Y Wen, TA Shifa, J He Nature Electronics 1 (6), 356-361, 2018 | 216 | 2018 |
| Patterning-Induced Ferromagnetism of Fe3GeTe2 van der Waals Materials beyond Room Temperature Q Li, M Yang, C Gong, RV Chopdekar, AT N’Diaye, J Turner, G Chen, ... Nano letters 18 (9), 5974-5980, 2018 | 211 | 2018 |
| Ultrasensitive Phototransistors Based on Few-Layered HfS2. K Xu, Z Wang, F Wang, Y Huang, L Yin, C Jiang, J He Advanced Materials (Deerfield Beach, Fla.) 27 (47), 7881-7887, 2015 | 206 | 2015 |
| Two‐dimensional non‐layered materials: synthesis, properties and applications F Wang, Z Wang, TA Shifa, Y Wen, F Wang, X Zhan, Q Wang, K Xu, ... Advanced Functional Materials 27 (19), 1603254, 2017 | 204 | 2017 |
| Sub-10 nm nanopattern architecture for 2D material field-effect transistors K Xu, D Chen, F Yang, Z Wang, L Yin, F Wang, R Cheng, K Liu, J Xiong, ... Nano Letters 17 (2), 1065-1070, 2017 | 198 | 2017 |
| Synthesis, properties and applications of 2d layered m iii x vi (m= ga, in; x= s, se, te) materials K Xu, L Yin, Y Huang, TA Shifa, J Chu, F Wang, R Cheng, Z Wang, J He Nanoscale 8 (38), 16802-16818, 2016 | 168 | 2016 |
| Synthesis, properties and applications of 2D non-graphene materials F Wang, Z Wang, Q Wang, F Wang, L Yin, K Xu, Y Huang, J He Nanotechnology 26 (29), 292001, 2015 | 153 | 2015 |
| Ultrahigh sensitive MoTe2 phototransistors driven by carrier tunneling L Yin, X Zhan, K Xu, F Wang, Z Wang, Y Huang, Q Wang, C Jiang, J He Applied Physics Letters 108 (4), 2016 | 123 | 2016 |
| Van der Waals Epitaxial Growth of Atomic Layered HfS2 Crystals for Ultrasensitive Near‐Infrared Phototransistors L Fu, F Wang, B Wu, N Wu, W Huang, H Wang, C Jin, L Zhuang, J He, ... Advanced Materials 29 (32), 1700439, 2017 | 121 | 2017 |
| Configuration‐Dependent Electrically Tunable Van der Waals Heterostructures Based on MoTe2/MoS2 F Wang, L Yin, ZX Wang, K Xu, FM Wang, TA Shifa, Y Huang, C Jiang, ... Advanced Functional Materials 26 (30), 5499-5506, 2016 | 107 | 2016 |
| Progress on electronic and optoelectronic devices of 2D layered semiconducting materials F Wang, Z Wang, C Jiang, L Yin, R Cheng, X Zhan, K Xu, F Wang, ... Small 13 (35), 1604298, 2017 | 105 | 2017 |
| Creation of skyrmions in van der Waals ferromagnet Fe3GeTe2 on (Co/Pd)n superlattice M Yang, Q Li, RV Chopdekar, R Dhall, J Turner, JD Carlström, C Ophus, ... Science advances 6 (36), eabb5157, 2020 | 100 | 2020 |
| Corneal complications in streptozocin-induced type I diabetic rats J Yin, J Huang, C Chen, N Gao, F Wang, XY Fu-Shin Investigative Ophthalmology & Visual Science 52 (9), 6589-6596, 2011 | 99 | 2011 |
| Gate‐coupling‐enabled robust hysteresis for nonvolatile memory and programmable rectifier in van der Waals ferroelectric heterojunctions W Huang, F Wang, L Yin, R Cheng, Z Wang, MG Sendeku, J Wang, N Li, ... Advanced Materials 32 (14), 1908040, 2020 | 97 | 2020 |
| Multibit optoelectronic memory in top‐floating‐gated van der Waals heterostructures W Huang, L Yin, F Wang, R Cheng, Z Wang, MG Sendeku, J Wang, N Li, ... Advanced Functional Materials 29 (36), 1902890, 2019 | 78 | 2019 |
| Ultrafast and ultrasensitive phototransistors based on few-layered HfSe2 L Yin, K Xu, Y Wen, Z Wang, Y Huang, F Wang, TA Shifa, R Cheng, H Ma, ... Applied Physics Letters 109 (21), 2016 | 76 | 2016 |
| Reduced innervation and delayed re-innervation after epithelial wounding in type 2 diabetic Goto-Kakizaki rats F Wang, N Gao, J Yin, XY Fu-Shin The American journal of pathology 181 (6), 2058-2066, 2012 | 69 | 2012 |
| Toward High-Performance Top-Gate Ultrathin HfS2 Field-Effect Transistors by Interface Engineering. K Xu, Y Huang, B Chen, Y Xia, W Lei, Z Wang, Q Wang, F Wang, L Yin, ... Small (Weinheim an der Bergstrasse, Germany) 12 (23), 3106-3111, 2016 | 66 | 2016 |
Kai XuZhejiang Univerisity在 zju.edu.cn 的电子邮件经过验证
