| Time dependence of bias-stress-induced SiC MOSFET threshold-voltage instability measurements AJ Lelis, D Habersat, R Green, A Ogunniyi, M Gurfinkel, J Suehle, ... IEEE transactions on Electron Devices 55 (8), 1835-1840, 2008 | 367 | 2008 |
| Electron transport and full-band electron-phonon interactions in graphene A Akturk, N Goldsman Journal of Applied Physics 103 (5), 2008 | 360 | 2008 |
| Method and system for locating and monitoring first responders BE Funk, A Bandyopadhyay, EA Kohn, N Goldsman, CA Teolis, ... US Patent 8,688,375, 2014 | 342 | 2014 |
| Semiclassical transport and phonon scattering of electrons in semiconducting carbon nanotubes G Pennington, N Goldsman Physical Review B 68 (4), 045426, 2003 | 333 | 2003 |
| F-inverted compact antenna for wireless sensor networks and manufacturing method B Yang, FM Vanin, X Shao, Q Balzano, N Goldsman US Patent 8,040,291, 2011 | 238 | 2011 |
| A physical model of high temperature 4H-SiC MOSFETs S Potbhare, N Goldsman, A Lelis, JM McGarrity, FB McLean, D Habersat IEEE Transactions on Electron devices 55 (8), 2029-2040, 2008 | 214 | 2008 |
| An antenna co-design dual band RF energy harvester B Li, X Shao, N Shahshahan, N Goldsman, T Salter, GM Metze IEEE Transactions on Circuits and Systems I: Regular Papers 60 (12), 3256-3266, 2013 | 164 | 2013 |
| Characterization of Transient Gate Oxide Trapping in SiC MOSFETs Using Fast–Techniques M Gurfinkel, HD Xiong, KP Cheung, JS Suehle, JB Bernstein, Y Shapira, ... IEEE Transactions on Electron Devices 55 (8), 2004-2012, 2008 | 150 | 2008 |
| Physics-based numerical modeling and characterization of 6H-silicon-carbide metal–oxide–semiconductor field-effect transistors SK Powell, N Goldsman, JM McGarrity, J Bernstein, CJ Scozzie, A Lelis Journal of Applied Physics 92 (7), 4053-4061, 2002 | 146 | 2002 |
| Radiation effects in commercial 1200 V 24 A silicon carbide power MOSFETs A Akturk, JM McGarrity, S Potbhare, N Goldsman IEEE Transactions on Nuclear Science 59 (6), 3258-3264, 2012 | 141 | 2012 |
| Numerical and experimental characterization of 4H-silicon carbide lateral metal-oxide-semiconductor field-effect transistor S Potbhare, N Goldsman, G Pennington, A Lelis, JM McGarrity Journal of Applied Physics 100 (4), 2006 | 141 | 2006 |
| A physics-based analytical/numerical solution to the Boltzmann transport equation for use in device simulation N Goldsman, L Henrickson, J Frey Solid-state electronics 34 (4), 389-396, 1991 | 138 | 1991 |
| Thin flexible rechargeable electrochemical energy cell and method of fabrication MC Peckerar, N Goldsman, Y Ngu, Z Dilli, GM Metze US Patent 9,484,155, 2016 | 130 | 2016 |
| Method and system for locating and monitoring first responders BE Funk, A Bandyopadhyay, EA Kohn, N Goldsman, CA Teolis, ... US Patent 8,706,414, 2014 | 102 | 2014 |
| A comparison of numerical solutions of the Boltzmann transport equation for high-energy electron transport silicon A Abramo, L Baudry, R Brunetti, R Castagne, M Charef, F Dessenne, ... IEEE Transactions on Electron Devices 41 (9), 1646-1654, 1994 | 93 | 1994 |
| Device modeling at cryogenic temperatures: Effects of incomplete ionization A Akturk, J Allnutt, Z Dilli, N Goldsman, M Peckerar IEEE transactions on electron devices 54 (11), 2984-2990, 2007 | 90 | 2007 |
| Electron transport and velocity oscillations in a carbon nanotube A Akturk, G Pennington, N Goldsman, A Wickenden IEEE Transactions on Nanotechnology 6 (4), 469-474, 2007 | 90 | 2007 |
| Low-field semiclassical carrier transport in semiconducting carbon nanotubes G Pennington, N Goldsman Physical Review B 71 (20), 205318, 2005 | 87 | 2005 |
| A focused asymmetric metal–insulator–metal tunneling diode: fabrication, DC characteristics and RF rectification analysis K Choi, F Yesilkoy, G Ryu, SH Cho, N Goldsman, M Dagenais, ... IEEE Transactions on Electron Devices 58 (10), 3519-3528, 2011 | 85 | 2011 |
| 2-D MOSFET modeling including surface effects and impact ionization by self-consistent solution of the Boltzmann, Poisson, and hole-continuity equations W Liang, N Goldsman, I Mayergoyz, PJ Oldiges IEEE Transactions on Electron Devices 44 (2), 257-267, 1997 | 85 | 1997 |
