| Impact of deposition and annealing temperature on material and electrical characteristics of ALD HfO2 D Triyoso, R Liu, D Roan, M Ramon, NV Edwards, R Gregory, D Werho, ... Journal of the Electrochemical Society 151 (10), F220, 2004 | 178 | 2004 |
| CMOS-compatible synthesis of large-area, high-mobility graphene by chemical vapor deposition of acetylene on cobalt thin films ME Ramon, A Gupta, C Corbet, DA Ferrer, HCP Movva, G Carpenter, ... ACS nano 5 (9), 7198-7204, 2011 | 149 | 2011 |
| Film properties of ALD and gate dielectrics grown on Si with various pre-deposition treatments DH Triyoso, RI Hegde, J Grant, P Fejes, R Liu, D Roan, M Ramon, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2004 | 108 | 2004 |
| Impact of titanium addition on film characteristics of HfO2 gate dielectrics deposited by atomic layer deposition DH Triyoso, RI Hegde, S Zollner, ME Ramon, S Kalpat, R Gregory, ... Journal of applied physics 98 (5), 2005 | 101 | 2005 |
| Three-gigahertz graphene frequency doubler on quartz operating beyond the transit frequency ME Ramón, KN Parrish, SF Chowdhury, CW Magnuson, HCP Movva, ... IEEE Transactions on Nanotechnology 11 (5), 877-883, 2012 | 86 | 2012 |
| HfO2 gate dielectrics deposited via tetrakis diethylamido hafnium J Schaeffer, NV Edwards, R Liu, D Roan, B Hradsky, R Gregory, J Kulik, ... Journal of the Electrochemical Society 150 (4), F67, 2003 | 67 | 2003 |
| Defect Passivation With Fluorine and Interface Engineering for Hf-Based High- /Metal Gate Stack Device Reliability and Performance Enhancement HH Tseng, PJ Tobin, S Kalpat, JK Schaeffer, ME Ramon, LRC Fonseca, ... IEEE Transactions on Electron Devices 54 (12), 3267-3275, 2007 | 62 | 2007 |
| Physical and electrical characteristics of HfO2 gate dielectrics deposited by ALD and MOCVD DH Triyoso, M Ramon, RI Hegde, D Roan, R Garcia, J Baker, XD Wang, ... Journal of the Electrochemical Society 152 (3), G203, 2005 | 55 | 2005 |
| Characteristics of mixed oxides and nanolaminates of atomic layer deposited HfO2–TiO2 gate dielectrics DH Triyoso, RI Hegde, XD Wang, MW Stoker, R Rai, ME Ramon, ... Journal of The Electrochemical Society 153 (9), G834, 2006 | 47 | 2006 |
| Improved short channel device characteristics with stress relieved pre-oxide (SRPO) and a novel tantalum carbon alloy metal gate/HfO/sub 2/stack HH Tseng, CC Capasso, JK Schaeffer, EA Hebert, PJ Tobin, DC Gilmer, ... IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004 | 45 | 2004 |
| Self-aligned inversion-type enhancement-mode GaAs metal-oxide-semiconductor field-effect transistor with Al2O3 gate dielectric D Shahrjerdi, T Akyol, M Ramon, DI Garcia-Gutierrez, E Tutuc, ... Applied Physics Letters 92 (20), 2008 | 37 | 2008 |
| BTI characteristics and mechanisms of metal gated HfO/sub 2/films with enhanced interface/bulk process treatments S Kalpat, HH Tseng, M Ramon, M Moosa, D Tekleab, PJ Tobin, ... IEEE Transactions on Device and Materials Reliability 5 (1), 26-35, 2005 | 35 | 2005 |
| A compact model for graphene FETs for linear and non-linear circuits KN Parrish, ME Ramón, SK Banerjee, D Akinwande Proc. IEEE International Conference on Simulation of Semiconductor Processes …, 2012 | 33 | 2012 |
| Self-aligned graphene field-effect transistors with polyethyleneimine doped source/drain access regions HCP Movva, ME Ramón, CM Corbet, S Sonde, F Chowdhury, ... Applied Physics Letters 101 (18), 2012 | 30 | 2012 |
| Hall mobility measurements in enhancement-mode GaAs field-effect transistors with Al2O3 gate dielectric D Shahrjerdi, J Nah, B Hekmatshoar, T Akyol, M Ramon, E Tutuc, ... Applied Physics Letters 97 (21), 2010 | 28 | 2010 |
| Microstructure modified HfO/sub 2/using Zr addition with Ta/sub x/C/sub y/gate for improved device performance and reliability RI Hegde, DH Triyoso, PJ Tobin, S Kalpat, ME Ramon, HH Tseng, ... IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest., 35-38, 2005 | 28 | 2005 |
| Performance of super-critical strained-Si directly on insulator (SC-SSOI) CMOS based on high-performance PD-SOI technology AVY Thean, T White, M Sadaka, L McCormick, M Ramon, R Mora, ... Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005., 134-135, 2005 | 27 | 2005 |
| ALD HfO~ 2 using Heavy Water (D~ 2O) for Improved MOSFET Stability HH Tseng, M Ramon, L Hebert, PJ Tobin, D Triyoso, JM Grant, ZX Jiang, ... INTERNATIONAL ELECTRON DEVICES MEETING, 83-86, 2003 | 24 | 2003 |
| Uniaxial-biaxial stress hybridization for super-critical strained-si directly on insulator (SC-SSOI) PMOS with different channel orientations. AVY Thean, L Prabhu, V Vartanian, M Ramon, BY Nguyen, T White, ... IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005 | 23 | 2005 |
| Method of forming a stacked low temperature diode and related devices Z Tran, K Mori, GT Dao, ME Ramon US Patent 8,916,872, 2014 | 20 | 2014 |
