| Tunnel field-effect transistors as energy-efficient electronic switches AM Ionescu, H Riel nature 479 (7373), 329-337, 2011 | 3080 | 2011 |
| Double-Gate Tunnel FET With High-Gate Dielectric K Boucart, AM Ionescu IEEE transactions on electron devices 54 (7), 1725-1733, 2007 | 1721 | 2007 |
| Metal-ferroelectric-meta-oxide-semiconductor field effect transistor with sub-60mV/decade subthreshold swing and internal voltage amplification A Rusu, GA Salvatore, D Jimenez, AM Ionescu 2010 international electron devices meeting, 16.3. 1-16.3. 4, 2010 | 256 | 2010 |
| Length scaling of the double gate tunnel FET with a high-k gate dielectric K Boucart, AM Ionescu Solid-State Electronics 51 (11-12), 1500-1507, 2007 | 253 | 2007 |
| Effect of COVID-19 pandemic lockdowns on planned cancer surgery for 15 tumour types in 61 countries: an international, prospective, cohort study J Glasbey, A Ademuyiwa, A Adisa, E AlAmeer, AP Arnaud, F Ayasra, ... The Lancet Oncology 22 (11), 1507-1517, 2021 | 247 | 2021 |
| Suspended-gate MOSFET: bringing new MEMS functionality into solid-state MOS transistor N Abelé, R Fritschi, K Boucart, F Casset, P Ancey, AM Ionescu IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005 | 234 | 2005 |
| Analytical modeling of single electron transistor for hybrid CMOS-SET analog IC design S Mahapatra, V Vaish, C Wasshuber, K Banerjee, AM Ionescu IEEE Transactions on Electron Devices 51 (11), 1772-1782, 2004 | 217 | 2004 |
| Demonstration of subthrehold swing smaller than 60mV/decade in Fe-FET with P(VDF-TrFE)/SiO2 gate stack GA Salvatore, D Bouvet, AM Ionescu 2008 IEEE International electron devices meeting, 1-4, 2008 | 183 | 2008 |
| A new definition of threshold voltage in tunnel FETs K Boucart, AM Ionescu Solid-state electronics 52 (9), 1318-1323, 2008 | 181 | 2008 |
| Self-biased reconfigurable graphene stacks for terahertz plasmonics JS Gomez-Diaz, C Moldovan, S Capdevila, J Romeu, LS Bernard, ... Nature communications 6 (1), 6334, 2015 | 166 | 2015 |
| Structural, magnetic, electronic, and spin transport properties of epitaxial A Ionescu, CAF Vaz, T Trypiniotis, CM Gürtler, H García-Miquel, ... Physical Review B—Condensed Matter and Materials Physics 71 (9), 094401, 2005 | 166 | 2005 |
| CMOS compatible fully integrated Mach-Zehnder interferometer in SOI technology P Dainesi, A Kung, M Chabloz, A Lagos, P Fluckiger, A Ionescu, P Fazan, ... IEEE Photonics Technology Letters 12 (6), 660-662, 2000 | 143 | 2000 |
| Near optimal graphene terahertz non-reciprocal isolator M Tamagnone, C Moldovan, JM Poumirol, AB Kuzmenko, AM Ionescu, ... Nature communications 7 (1), 11216, 2016 | 142 | 2016 |
| TCAD simulation of SOI TFETs and calibration of non-local band-to-band tunneling model A Biswas, SS Dan, C Le Royer, W Grabinski, AM Ionescu Microelectronic Engineering 98, 334-337, 2012 | 132 | 2012 |
| Characterization of Ni thin films following thermal oxidation in air L De Los Santos Valladares, A Ionescu, S Holmes, CHW Barnes, ... Journal of Vacuum Science & Technology B 32 (5), 2014 | 131 | 2014 |
| Non-contact characterization of graphene surface impedance at micro and millimeter waves JS Gomez-Diaz, J Perruisseau-Carrier, P Sharma, A Ionescu Journal of Applied Physics 111 (11), 2012 | 129 | 2012 |
| Complementary germanium electron–hole bilayer tunnel FET for sub-0.5-V operation L Lattanzio, L De Michielis, AM Ionescu IEEE Electron Device Letters 33 (2), 167-169, 2011 | 125 | 2011 |
| Nanowire transistors made easy AM Ionescu Nature nanotechnology 5 (3), 178-179, 2010 | 123 | 2010 |
| Understanding the superlinear onset of tunnel-FET output characteristic L De Michielis, L Lattanzio, AM Ionescu IEEE Electron Device Letters 33 (11), 1523-1525, 2012 | 114 | 2012 |
| Analytical modeling of the suspended-gate FET and design insights for low-power logic K Akarvardar, C Eggimann, D Tsamados, YS Chauhan, GC Wan, ... IEEE transactions on Electron Devices 55 (1), 48-59, 2007 | 110 | 2007 |
Kirsten MoselundIBM Research在 zurich.ibm.com 的电子邮件经过验证
