Vishal Khandelwal 个人学术档案

引用次数

	总计	2019 年至今
引用	98	98
h 指数	7	7
i10 指数	5	5

2022202320243 24 71

合著作者

Xiaohang LiAssociate Professor, Advanced Semiconductor Lab; Associate Director, Innovation Hub at KAUST在 kaust.edu.sa 的电子邮件经过验证
Yi LuUniversity of Wisconsin-Madison; King Abdullah University of Science and Technology在 wisc.edu 的电子邮件经过验证
Saravanan YuvarajaPhD Electrophysics在 kaust.edu.sa 的电子邮件经过验证
ChuanJu WangKing Abdullah University of Science and Technology在 kaust.edu.sa 的电子邮件经过验证
Che-Hao LiaoNational Yunlin University of Science and Technology在 yuntech.edu.tw 的电子邮件经过验证
Biplab SarkarAssociate Professor, IIT Roorkee在 ece.iitr.ac.in 的电子邮件经过验证
Zhiyuan LiuKing Abdullah University of Science and Technology在 kaust.edu.sa 的电子邮件经过验证
Rongyu LinJohns Hopkins University; Ph.D. in ECE at KAUST在 jhu.edu 的电子邮件经过验证
Shibin KrishnaPost Doctoral Research Associate, Cardiff University, United Kingdom在 cardiff.ac.uk 的电子邮件经过验证
Dhanu ChettriKAUST在 kaust.edu.sa 的电子邮件经过验证
Feras AlQatariDevelopment Engineer, ams OSRAM在 kaust.edu.sa 的电子邮件经过验证
Na XiaoKing Abdullah University of Science and Technology在 kaust.edu.sa 的电子邮件经过验证
Ronghui LinKing Abdullah University of Science and Technology在 kaust.edu.sa 的电子邮件经过验证
Ganesh MainaliPhD Student of KAUST, M.Sc Kwangwoon University在 kaust.edu.sa 的电子邮件经过验证
Husam N AlshareefKAUST, Saudi Arabia; Univeristy of Texas at Dallas (Adjunct)在 kaust.edu.sa 的电子邮件经过验证
Amruth CLodz University of Technology在 p.lodz.pl 的电子邮件经过验证
Derya BaranKing Abdullah University of Science and Technology (KAUST)在 kaust.edu.sa 的电子邮件经过验证

关注

Vishal Khandelwal

Ph.D. King Abdullah University of Science and Technology, Saudi Arabia

在 kaust.edu.sa 的电子邮件经过验证 - 首页

Wide bandgap Semiconductor Thin-film Transistors UWBG Oxide Electronics UWBG Memory Extreme Environment Electronics


标题按引用次数排序按年份排序按标题排序	引用次数引用次数	年份
Wide bandgap semiconductor-based integrated circuits S Yuvaraja, V Khandelwal, X Tang, X Li Chip, 100072, 2023	19	2023
A machine learning study on superlattice electron blocking layer design for AlGaN deep ultraviolet light-emitting diodes using the stacked XGBoost/LightGBM algorithm R Lin, Z Liu, P Han, R Lin, Y Lu, H Cao, X Tang, C Wang, V Khandelwal, ... Journal of Materials Chemistry C 10 (46), 17602-17610, 2022	16	2022
A self-powered and broadband UV PIN photodiode employing a NiOx layer and a β-Ga2O3 heterojunction JMT Vasquez, A Ashai, Y Lu, V Khandelwal, M Rajbhar, M Kumar, X Li, ... Journal of Physics D: Applied Physics 56 (6), 065104, 2023	14	2023
Origin of interfacial charges of Al2O3/Si and Al2O3/GaN heterogeneous heterostructures C Wang, F AlQatari, V Khandelwal, R Lin, X Li Applied Surface Science 608, 155099, 2023	14	2023
Band alignment of orthorhombic Ga2O3 with GaN and AlN semiconductors S Krishna, Y Lu, CH Liao, V Khandelwal, X Li Applied Surface Science 599, 153901, 2022	13	2022
Ti₃C₂T_x MXene van der Waals Gate Contact for GaN High Electron Mobility Transistors C Wang, X Xu, S Tyagi, PC Rout, U Schwingenschlögl, B Sarkar, ... Advanced Materials 35 (22), 2211738, 2023	7	2023
Monolithic β-Ga2O3 NMOS IC based on heteroepitaxial E-mode MOSFETs V Khandelwal, S Yuvaraja, GIM García, C Wang, Y Lu, F AlQatari, X Li Applied Physics Letters 122 (14), 2023	7	2023
-GaO Pseudo-CMOS Monolithic Inverters D Chettri, G Mainali, C Amruth, V Khandelwal, S Yuvaraja, N Xiao, X Tang, ... IEEE Transactions on Electron Devices, 2023	3	2023
Enhancement-mode Ambipolar Thin-film Transistors and CMOS Logic Circuits using Bilayer Ga2O3/NiO Semiconductors Y Saravanan, K Vishal, K Shibin, L Yi, L Zhiyuan, K Mritunjay, T Xiao, ...	3*
Integration of low-thermal-budget In2O3 NMOS inverter and GaN HEMT for power electronics M Kumar, S Yuvaraja, N Xiao, MK Rajbhar, G Mainali, V Khandelwal, ... Applied Physics Letters 124 (11), 2024	1	2024
Demonstration of β-Ga2O3 nonvolatile flash memory for oxide electronics V Khandelwal, M Rajbhar, GIM Garcia, T Tang, B Sarkar, X Li Japanese Journal of Applied Physics, 2023	1	2023
In Situ Growth of (−201) Fiber‐Textured β‐Ga₂O₃ Semiconductor Tape for Flexible Thin‐Film Transistor X Tang, Y Zhao, KH Li, C Liu, H Faber, W Babatain, CH Liao, S Yuvaraja, ... Advanced Electronic Materials, 2400046, 2024		2024
Chemical solution deposition of a (GaAl) 2 O 3 single layer with high thickness and silver-enhanced crystal quality X Tang, WA AlQanbar, MB Hassine, Y Lu, H Cao, C Wang, Z Jiang, T Liu, ... CrystEngComm 26 (18), 2373-2379, 2024		2024
Gate Stack Engineering in n-type (− 201) $\upbeta-\text {Ga} _ {2}\mathrm {O} _ {3} $ Transistors V Khandelwal, S Yuvaraja, C Wang, D Chettri, X Li 2022 IEEE International Conference on Emerging Electronics (ICEE), 1-4, 2022		2022
Demonstration of Ga2O3 Trigate Transistors on (100) Silicon Substrates S Yuvaraja, V Khandelwal, S Krishna, Y Lu, Z Liu, M Kumar, D Chettri, ... IEEE International Conference on Emerging Electronics (ICEE), 2022		2022

系统目前无法执行此操作，请稍后再试。

文章 1–15

每年引用数

重复的引用

合并的引用

添加合著者合著作者

上传 PDF

关注此作者

引用次数

合著作者

引用