| Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering Z Yu, Y Pan, Y Shen, Z Wang, ZY Ong, T Xu, R Xin, L Pan, B Wang, L Sun, ... Nature communications 5 (1), 5290, 2014 | 680 | 2014 |
| High‐Electron‐Mobility and Air‐Stable 2D Layered PtSe2 FETs Y Zhao, J Qiao, Z Yu, P Yu, K Xu, SP Lau, W Zhou, Z Liu, X Wang, W Ji, ... Advanced Materials 29 (5), 1604230, 2017 | 649 | 2017 |
| Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire T Li, W Guo, L Ma, W Li, Z Yu, Z Han, S Gao, L Liu, D Fan, Z Wang, ... Nature Nanotechnology 16 (11), 1201-1207, 2021 | 435 | 2021 |
| A MoS2/PTCDA Hybrid Heterojunction Synapse with Efficient Photoelectric Dual Modulation and Versatility S Wang, C Chen, Z Yu, Y He, X Chen, Q Wan, Y Shi, DW Zhang, H Zhou, ... Advanced Materials 31 (3), 1806227, 2019 | 402 | 2019 |
| Analyzing the Carrier Mobility in Transition‐Metal Dichalcogenide MoS2 Field‐Effect Transistors Z Yu, ZY Ong, S Li, JB Xu, G Zhang, YW Zhang, Y Shi, X Wang Advanced Functional Materials 27 (19), 1604093, 2017 | 353 | 2017 |
| High‐Performance Monolayer WS2 Field‐Effect Transistors on High‐κ Dielectrics Y Cui, R Xin, Z Yu, Y Pan, ZY Ong, X Wei, J Wang, H Nan, Z Ni, Y Wu, ... Advanced Materials 27 (35), 5230-5234, 2015 | 276 | 2015 |
| Realization of room-temperature phonon-limited carrier transport in monolayer MoS2 by dielectric and carrier screening Z Yu, ZY Ong, Y Pan, Y Cui, R Xin, Y Shi, B Wang, Y Wu, T Che, ... arXiv preprint arXiv:1510.00830, 2015 | 267 | 2015 |
| Uniform and ultrathin high-κ gate dielectrics for two-dimensional electronic devices W Li, J Zhou, S Cai, Z Yu, J Zhang, N Fang, T Li, Y Wu, T Chen, X Xie, ... Nature Electronics 2 (12), 563-571, 2019 | 262 | 2019 |
| Uniform nucleation and epitaxy of bilayer molybdenum disulfide on sapphire L Liu, T Li, L Ma, W Li, S Gao, W Sun, R Dong, X Zou, D Fan, L Shao, ... Nature 605 (7908), 69-75, 2022 | 220 | 2022 |
| Approaching the quantum limit in two-dimensional semiconductor contacts W Li, X Gong, Z Yu, L Ma, W Sun, S Gao, Ç Köroğlu, W Wang, L Liu, T Li, ... Nature 613 (7943), 274-279, 2023 | 156 | 2023 |
| Three-dimensional monolithic micro-LED display driven by atomically thin transistor matrix W Meng, F Xu, Z Yu, T Tao, L Shao, L Liu, T Li, K Wen, J Wang, L He, ... Nature Nanotechnology 16 (11), 1231-1236, 2021 | 144 | 2021 |
| Sub-thermionic, ultra-high-gain organic transistors and circuits Z Luo, B Peng, J Zeng, Z Yu, Y Zhao, J Xie, R Lan, Z Ma, L Pan, K Cao, ... Nature Communications 12 (1), 1928, 2021 | 101 | 2021 |
| Mo-O bond doping and related-defect assisted enhancement of photoluminescence in monolayer MoS2 X Wei, Z Yu, F Hu, Y Cheng, L Yu, X Wang, M Xiao, J Wang, X Wang, ... Aip Advances 4 (12), 2014 | 99 | 2014 |
| Low‐power complementary inverter with negative capacitance 2D semiconductor transistors J Wang, X Guo, Z Yu, Z Ma, Y Liu, Z Lin, M Chan, Y Zhu, X Wang, Y Chai Advanced Functional Materials 30 (46), 2003859, 2020 | 64 | 2020 |
| Negative capacitance 2D MoS2transistors with sub-60mV/dec subthreshold swing over 6 orders, 250 μA/μm current density, and nearly-hysteresis-free Z Yu, H Wang, W Li, S Xu, X Song, S Wang, P Wang, P Zhou, Y Shi, ... 2017 IEEE International Electron Devices Meeting (IEDM), 23.6. 1-23.6. 4, 2017 | 57 | 2017 |
| An in-memory computing architecture based on a duplex two-dimensional material structure for in situ machine learning H Ning, Z Yu, Q Zhang, H Wen, B Gao, Y Mao, Y Li, Y Zhou, Y Zhou, ... Nature nanotechnology 18 (5), 493-500, 2023 | 48 | 2023 |
| Low-defect-density WS2 by hydroxide vapor phase deposition Y Wan, E Li, Z Yu, JK Huang, MY Li, AS Chou, YT Lee, CJ Lee, HC Hsu, ... Nature Communications 13 (1), 4149, 2022 | 48 | 2022 |
| Steep Slope p-type 2D WSe2 Field-Effect Transistors with Van Der Waals Contact and Negative Capacitance J Wang, X Guo, Z Yu, Z Ma, Y Liu, M Chan, Y Zhu, X Wang, Y Chai 2018 IEEE International Electron Devices Meeting (IEDM), 22.3. 1-22.3. 4, 2018 | 28 | 2018 |
| MoS2/WSe2 vdW Heterostructures Decorated with PbS Quantum Dots for the Development of High-Performance Photovoltaic and Broadband Photodiodes P Zeng, W Wang, D Han, J Zhang, Z Yu, J He, P Zheng, H Zheng, L Zheng, ... ACS nano 16 (6), 9329-9338, 2022 | 27 | 2022 |
| Nanocrystal-embedded-insulator (NEI) ferroelectric field-effect transistor featuring low operating voltages and improved synaptic behavior Y Peng, W Xiao, G Han, Y Liu, J Wu, K Wang, Y He, Z Yu, X Wang, N Xu, ... IEEE Electron Device Letters 40 (12), 1933-1936, 2019 | 20 | 2019 |
