| Enhanced efficiency of Cd-free Cu (In, Ga)(Se, S) 2 minimodule via (Zn, Mg) O second buffer layer and alkali metal post-treatment T Kato, A Handa, T Yagioka, T Matsuura, K Yamamoto, S Higashi, JL Wu, ... IEEE journal of photovoltaics 7 (6), 1773-1780, 2017 | 118 | 2017 |
| Sb surfactant effect on GaInAs/GaAs highly strained quantum well lasers emitting at 1200 nm range grown by molecular beam epitaxy T Kageyama, T Miyamoto, M Ohta, T Matsuura, Y Matsui, T Furuhata, ... Journal of applied physics 96 (1), 44-48, 2004 | 51 | 2004 |
| Surfactant effect of Sb on GaInAs quantum dots grown by molecular beam epitaxy T Matsuura, T Miyamoto, T Kageyama, M Ohta, Y Matsui, T Furuhata, ... Japanese journal of applied physics 43 (5A), L605, 2004 | 45 | 2004 |
| Nitride semiconductor device and method of producing the same Y Ooshika, T Matsuura US Patent 8,680,509, 2014 | 32 | 2014 |
| P-type doping characteristics of GaInNAs: Be grown by solid source molecular beam epitaxy T Matsuura, T Miyamoto, S Makino, M Ohta, Y Matsui, F Koyama Japanese journal of applied physics 43 (4A), L433, 2004 | 21 | 2004 |
| Elongation of emission wavelength of GaInAsSb-covered (Ga) InAs quantum dots grown by molecular beam epitaxy T Matsuura, T Miyamoto, T Kageyama, M Ohta, Y Matsui, T Furuhata, ... Japanese journal of applied physics 43 (1A), L82, 2003 | 21 | 2003 |
| 1.4 µm GaInNAs/GaAs quantum well laser grown by chemical beam epitaxy Y Ikenaga, T Miyamoto, S Makino, T Kageyama, M Arai, F Koyama, K Iga Japanese journal of applied physics 41 (2R), 664, 2002 | 17 | 2002 |
| Topological characteristics of InAs quantum dot with GaInAs cover using Sb surfactant T Matsuura, T Miyamoto, F Koyama Applied physics letters 88 (18), 2006 | 16 | 2006 |
| Photoluminescence characterization of (Ga) InAs quantum dots with GaInAsSb cover layer grown by MBE T Matsuura, T Miyamoto, M Ohta, F Koyama physica status solidi c 3 (3), 516-519, 2006 | 9 | 2006 |
| PL characteristics of InAs quantum dots with Sb irradiation in growth interruption T Matsuura, T Miyamoto, M Ohta, Y Matsui, T Furuhata, F Koyama Journal of crystal growth 278 (1-4), 51-56, 2005 | 9 | 2005 |
| Semiconductor device T Fukumoto, M Tokunaga, T Matsuura US Patent App. 29/150,991, 2002 | 9 | 2002 |
| Stacked semiconductor device structure T Fukumoto, M Tokunaga, T Matsuura US Patent App. 09/947,360, 2002 | 8 | 2002 |
| Semiconductor device T Fukumoto, M Tokunaga, T Matsuura US Patent App. 29/144,816, 2002 | 8 | 2002 |
| Iii nitride semiconductor light emitting device T Matsuura US Patent App. 14/763,044, 2015 | 7 | 2015 |
| Semiconductor device and method of producing the same Y Ooshika, T Matsuura US Patent 8,735,938, 2014 | 7 | 2014 |
| Semiconductor device T Fukumoto, M Tokunaga, T Matsuura US Patent App. 29/144,821, 2002 | 7 | 2002 |
| Optical quality dependence on growth rate for solid-source molecular beam epitaxy grown highly strained GaInAsSb/GaAs quantum wells M Ohta, T Miyamoto, T Matsuura, Y Matsui, T Furuhata, F Koyama Japanese journal of applied physics 43 (12B), L1569, 2004 | 6 | 2004 |
| Photoluminescence characterization of inas quantum dots on GaNAs buffer layer by metalorganic chemical vapor deposition R Suzuki, T Miyamoto, T Matsuura, F Koyama Japanese journal of applied physics 45 (6L), L585, 2006 | 5 | 2006 |
| Semiconductor device and method for manufacture thereof T Matsuura, K Michii, J Shibata, K Bando US Patent App. 10/628,461, 2004 | 5 | 2004 |
| Semiconductor device T Fukumoto, M Tokunaga, T Matsuura US Patent App. 29/144,819, 2002 | 5 | 2002 |
