| Performance improvement of longwave infrared photodetector based on type-II InAs/GaSb superlattices using unipolar current blocking layers N Gautam, HS Kim, MN Kutty, E Plis, LR Dawson, S Krishna Applied Physics Letters 96 (23), 2010 | 174 | 2010 |
| Passivation techniques for InAs/GaSb strained layer superlattice detectors EA Plis, MN Kutty, S Krishna Laser & Photonics Reviews 7 (1), 45-59, 2013 | 84 | 2013 |
| Varshni parameters for InAs/GaSb strained layer superlattice infrared photodetectors B Klein, E Plis, MN Kutty, N Gautam, A Albrecht, S Myers, S Krishna Journal of Physics D: Applied Physics 44 (7), 075102, 2011 | 70 | 2011 |
| Lateral diffusion of minority carriers in InAsSb-based nBn detectors E Plis, S Myers, MN Kutty, J Mailfert, EP Smith, S Johnson, S Krishna Applied Physics Letters 97 (12), 2010 | 57 | 2010 |
| Vertical minority carrier electron transport in p-type InAs/GaSb type-II superlattices GA Umana-Membreno, B Klein, H Kala, J Antoszewski, N Gautam, ... Applied Physics Letters 101 (25), 2012 | 53 | 2012 |
| GaSb quantum-well-based “buffer-free” vertical light emitting diode monolithically embedded within a GaAs cavity incorporating interfacial misfit arrays M Mehta, G Balakrishnan, S Huang, A Khoshakhlagh, A Jallipalli, P Patel, ... Applied physics letters 89 (21), 2006 | 47 | 2006 |
| Passivation of long-wave infrared InAs/GaSb strained layer superlattice detectors E Plis, MN Kutty, S Myers, HS Kim, N Gautam, LR Dawson, S Krishna Infrared Physics & Technology 54 (3), 252-257, 2011 | 45 | 2011 |
| 1.54 µm GaSb/AlGaSb multi-quantum-well monolithic laser at 77 K grown on miscut Si substrate using interfacial misfit arrays A Jallipalli, MN Kutty, G Balakrishnan, J Tatebayashi, N Nuntawong, ... Electronics letters 43 (22), 1198-1199, 2007 | 44 | 2007 |
| Room-Temperature Operation of Buffer-Free GaSb–AlGaSb Quantum-Well Diode Lasers Grown on a GaAs Platform Emitting at 1.65m M Mehta, A Jallipalli, J Tatebayashi, MN Kutty, A Albrecht, G Balakrishnan, ... IEEE Photonics Technology Letters 19 (20), 1628-1630, 2007 | 43 | 2007 |
| Band engineered HOT midwave infrared detectors based on type-II InAs/GaSb strained layer superlattices N Gautam, S Myers, AV Barve, B Klein, EP Smith, D Rhiger, E Plis, ... Infrared physics & technology 59, 72-77, 2013 | 36 | 2013 |
| Study of surface treatments on InAs/GaSb superlattice lwir detectors MN Kutty, E Plis, A Khoshakhlagh, S Myers, N Gautam, S Smolev, ... Journal of Electronic Materials 39, 2203-2209, 2010 | 35 | 2010 |
| Room-temperature lasing at 1.82 μm of GaInSb∕ AlGaSb quantum wells grown on GaAs substrates using an interfacial misfit array J Tatebayashi, A Jallipalli, MN Kutty, SH Huang, G Balakrishnan, ... Applied Physics Letters 91 (14), 2007 | 34 | 2007 |
| Mid-wavelength InAsSb detectors based on nBn design A Khoshakhlagh, S Myers, E Plis, MN Kutty, B Klein, N Gautam, H Kim, ... Infrared Technology and Applications XXXVI 7660, 948-954, 2010 | 30 | 2010 |
| Monolithically integrated III-Sb-based laser diodes grown on miscut Si substrates J Tatebayashi, A Jallipalli, MN Kutty, S Huang, K Nunna, G Balakrishnan, ... IEEE Journal of Selected Topics in Quantum Electronics 15 (3), 716-723, 2009 | 29 | 2009 |
| Investigation of multistack InAs/InGaAs/GaAs self-assembled quantum dots-in-double-well structures for infrared detectors YD Sharma, MN Kutty, RV Shenoi, AV Barve, S Myers, J Shao, E Plis, ... Journal of Vacuum Science & Technology B 28 (3), C3G1-C3G7, 2010 | 28 | 2010 |
| Performance improvement of long-wave infrared InAs/GaSb strained-layer superlattice detectors through sulfur-based passivation EA Plis, MN Kutty, S Myers, A Rathi, EH Aifer, I Vurgaftman, S Krishna Infrared Physics & Technology 55 (2-3), 216-219, 2012 | 25 | 2012 |
| Heterostructure band engineering of type-II InAs/GaSb superlattice based longwave infrared photodiodes using unipolar current blocking barriers N Gautam, E Plis, HS Kim, MN Kutty, S Myers, A Khoshakhlagh, ... Infrared Technology and Applications XXXVI 7660, 572-577, 2010 | 20 | 2010 |
| Comparison of superlattice based dual color nBn and pBp infrared detectors S Myers, E Plis, C Morath, V Cowan, N Gautam, B Klein, MN Kutty, ... Infrared Sensors, Devices, and Applications; and Single Photon Imaging II …, 2011 | 18 | 2011 |
| Fabrication and characteristics of broad-area light-emitting diode based on nanopatterned quantum dots PS Wong, BL Liang, J Tatebayashi, L Xue, N Nuntawong, MN Kutty, ... Nanotechnology 20 (3), 035302, 2008 | 18 | 2008 |
| Compensation of interfacial states located inside the “buffer-free” GaSb/GaAs (001) heterojunction via δ-doping A Jallipalli, K Nunna, MN Kutty, G Balakrishnan, GB Lush, LR Dawson, ... Applied Physics Letters 95 (7), 2009 | 16 | 2009 |
