| Carbon monolayer phase condensation on Ni (111) M Eizenberg, JM Blakely Surface Science 82 (1), 228-236, 1979 | 716 | 1979 |
| Carbon interaction with nickel surfaces: Monolayer formation and structural stability M Eizenberg, JM Blakely The Journal of Chemical Physics 71 (8), 3467-3477, 1979 | 189 | 1979 |
| A Review on Dielectric Breakdown in Thin Dielectrics: Silicon Dioxide, High‐k, and Layered Dielectrics F Palumbo, C Wen, S Lombardo, S Pazos, F Aguirre, M Eizenberg, F Hui, ... Advanced Functional Materials 30 (18), 1900657, 2020 | 182 | 2020 |
| Characterization of electroless deposited Co (W, P) thin films for encapsulation of copper metallization A Kohn, M Eizenberg, Y Shacham-Diamand, Y Sverdlov Materials Science and Engineering: A 302 (1), 18-25, 2001 | 165 | 2001 |
| Annealing-induced interfacial toughening using a molecular nanolayer DD Gandhi, M Lane, Y Zhou, AP Singh, S Nayak, U Tisch, M Eizenberg, ... Nature 447 (7142), 299-302, 2007 | 161 | 2007 |
| Interfacial reactions between Ni films and GaAs A Lahav, M Eizenberg, Y Komem Journal of applied physics 60 (3), 991-1001, 1986 | 146 | 1986 |
| New method for determining flat-band voltage in high mobility semiconductors R Winter, J Ahn, PC McIntyre, M Eizenberg Journal of Vacuum Science & Technology B 31 (3), 2013 | 122 | 2013 |
| Formation and Schottky behavior of manganese silicides on n‐type silicon M Eizenberg, KN Tu journal of Applied Physics 53 (10), 6885-6890, 1982 | 122 | 1982 |
| Interlayer dielectrics for semiconductor technologies SP Muraka, M Eizenberg, AK Sinha Elsevier, 2003 | 118 | 2003 |
| Raman scattering and stress measurements in Si1−xGex layers epitaxially grown on Si(100) by ion‐beam sputter deposition F Meyer, M Zafrany, M Eizenberg, R Beserman, C Schwebel, C Pellet Journal of applied physics 70 (8), 4268-4277, 1991 | 110* | 1991 |
| TiCN: A new chemical vapor deposited contact barrier metallization for submicron devices M Eizenberg, K Littau, S Ghanayem, A Mak, Y Maeda, M Chang, ... Applied physics letters 65 (19), 2416-2418, 1994 | 99 | 1994 |
| Evaluation of electroless deposited Co (W, P) thin films as diffusion barriers for copper metallization A Kohn, M Eizenberg, Y Shacham-Diamand, B Israel, Y Sverdlov Microelectronic engineering 55 (1-4), 297-303, 2001 | 90 | 2001 |
| Chemical vapor deposited TiCN: A new barrier metallization for submicron via and contact applications M Eizenberg, K Littau, S Ghanayem, M Liao, R Mosely, AK Sinha Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 13 (3 …, 1995 | 90 | 1995 |
| The effect of surface roughness on the resistivity increase in nanometric dimensions H Marom, M Eizenberg Journal of applied physics 99 (12), 2006 | 85 | 2006 |
| Structures of ultra-thin atomic-layer-deposited films YY Wu, A Kohn, M Eizenberg Journal of applied physics 95 (11), 6167-6174, 2004 | 83 | 2004 |
| Properties of copper films prepared by chemical vapor deposition for advanced metallization of microelectronic devices R Kröger, M Eizenberg, D Cong, N Yoshida, LY Chen, S Ramaswami, ... Journal of the Electrochemical Society 146 (9), 3248, 1999 | 81 | 1999 |
| Energy band discontinuities in heterojunctions measured by internal photoemission M Heiblum, MI Nathan, M Eizenberg Applied physics letters 47 (5), 503-505, 1985 | 80 | 1985 |
| Copper ion diffusion in porous and nonporous SiO2-based dielectrics using bias thermal stress and thermal stress tests I Fisher, M Eizenberg Thin Solid Films 516 (12), 4111-4121, 2008 | 76 | 2008 |
| Analysis of nonideal Schottky and p‐n junction diodes—Extraction of parameters from I–V plots M Lyakas, R Zaharia, M Eizenberg Journal of applied physics 78 (9), 5481-5489, 1995 | 70 | 1995 |
| Utilization of SiH4 soak and purge in deposition processes MC Tseng, M Chang, RA Srinivas, KD Rinnen, M Eizenberg, S Telford US Patent 5,817,576, 1998 | 65 | 1998 |
