| Impact of repetitive short-circuit tests on the normal operation of SiC MOSFETs considering case temperature influence H Du, PD Reigosa, L Ceccarelli, F Iannuzzo IEEE Journal of Emerging and Selected Topics in Power Electronics 8 (1), 195-205, 2019 | 40 | 2019 |
| Cost-effective prognostics of IGBT bond wires with consideration of temperature swing K Hu, Z Liu, H Du, L Ceccarelli, F Iannuzzo, F Blaabjerg, IA Tasiu IEEE Transactions on Power Electronics 35 (7), 6773-6784, 2019 | 30 | 2019 |
| Investigation on the degradation indicators of short-circuit tests in 1.2 kV SiC MOSFET power modules H Du, PD Reigosa, F Iannuzzo, L Ceccarelli Microelectronics Reliability 88, 661-665, 2018 | 16 | 2018 |
| Finite element modeling of IGBT modules to explore the correlation between electric parameters and damage in bond wires M Jiang, G Fu, L Ceccarelli, H Du, MB Fogsgaard, AS Bahman, Y Yang, ... 2019 IEEE Energy Conversion Congress and Exposition (ECCE), 839-844, 2019 | 14 | 2019 |
| Effect of short-circuit degradation on the remaining useful lifetime of SiC MOSFETs and its failure analysis H Du, S Letz, N Baker, T Goetz, F Iannuzzo, A Schletz Microelectronics Reliability 114, 113784, 2020 | 13 | 2020 |
| Impact of the case temperature on the reliability of SiC MOSFETs under repetitive short circuit tests H Du, PD Reigosa, F Iannuzzo, L Ceccarelli 2019 IEEE Applied Power Electronics Conference and Exposition (APEC), 332-337, 2019 | 12 | 2019 |
| Implications of short-circuit events on power cycling of 1.2-kV/20-A SiC MOSFET power modules H Du, L Ceccarelli, F Iannuzzo, PD Reigosa Microelectronics Reliability 100, 113373, 2019 | 6 | 2019 |
| Investigation of the parasitic inductance influence on the short-circuit behaviour of high voltage IGBTs H Du, I Omura, S Matsumoto, T Arai 2023 IEEE Applied Power Electronics Conference and Exposition (APEC), 2451-2455, 2023 | 3 | 2023 |
| A mitigation strategy for the short-circuit degradation in SiC MOSFETs H Du, F Iannuzzo 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia …, 2020 | 3 | 2020 |
| Implications of short-circuit degradation on the aging process in accelerated cycling tests of SiC MOSFETs H Du, N Baker, F Iannuzzo 2020 32nd International Symposium on Power Semiconductor Devices and ICs …, 2020 | 3 | 2020 |
| Short-circuit protection scheme with efficient soft turn-off for power modules H Du, Y Bayarsaikhan, I Omura Microelectronics Reliability 150, 115078, 2023 | 2 | 2023 |
| Impact of Short-Circuit Events on the Remaining Useful Life of SiC MOSFETs and Mitigation Strategy H Du | 2 | 2020 |
| Transient nonlinear thermal stability analysis of metro cable under pulse power Z Zheng, H Du, Z Yu, M Sun, Z Ren, Y Shen, F Yang 2016 IEEE International Conference on Dielectrics (ICD) 2, 889-892, 2016 | 1 | 2016 |
| Temperature-Dependent Mechanism of Short-Circuit Voltage Imbalance in Series-Connected SiC MOSFETs H Du, I Omura, S Matsumoto, T Arai 2024 36th International Symposium on Power Semiconductor Devices and ICs …, 2024 | | 2024 |
| SiC MOSFET のソフトターンオフ短絡保護方法の提案 杜赫 電気学会研究会資料. SPC= The papers of technical meeting on semiconductor …, 2023 | | 2023 |
| Crackle discharge detection on GIS spacer through partial discharge test and decomposed gas analysis of SF6 Z Zheng, W Gong, Z Yu, H Du, W Li, L Shi 2016 IEEE International Conference on Dielectrics (ICD) 2, 885-888, 2016 | | 2016 |
