| Evaluation of border traps and interface traps in HfO2/MoS2 gate stacks by capacitance–voltage analysis P Zhao, A Khosravi, A Azcatl, P Bolshakov, G Mirabelli, E Caruso, ... 2D Materials 5 (3), 031002, 2018 | 94 | 2018 |
| Atomically Controlled Tunable Doping in High‐Performance WSe2 Devices CS Pang, TYT Hung, A Khosravi, R Addou, Q Wang, MJ Kim, RM Wallace, ... Advanced Electronic Materials 6 (8), 1901304, 2020 | 81 | 2020 |
| Contact Engineering for Dual-Gate MoS2 Transistors Using O2 Plasma Exposure P Bolshakov, CM Smyth, A Khosravi, P Zhao, PK Hurley, CL Hinkle, ... ACS Applied Electronic Materials 1 (2), 210-219, 2019 | 58 | 2019 |
| Enhancing interconnect reliability and performance by converting tantalum to 2D layered tantalum sulfide at low temperature CL Lo, M Catalano, A Khosravi, W Ge, Y Ji, DY Zemlyanov, L Wang, ... Advanced materials 31 (30), 1902397, 2019 | 54 | 2019 |
| Dual-gate MoS2 transistors with sub-10 nm top-gate high-k dielectrics P Bolshakov, A Khosravi, P Zhao, PK Hurley, CL Hinkle, RM Wallace, ... Applied Physics Letters 112 (25), 2018 | 54 | 2018 |
| Covalent nitrogen doping in molecular beam epitaxy-grown and bulk WSe2 A Khosravi, R Addou, CM Smyth, R Yue, CR Cormier, J Kim, CL Hinkle, ... APL Materials 6 (2), 2018 | 33 | 2018 |
| In situ exfoliated 2D molybdenum disulfide analyzed by XPS X Wang, CR Cormier, A Khosravi, CM Smyth, JR Shallenberger, R Addou, ... Surface Science Spectra 27 (1), 2020 | 29 | 2020 |
| Understanding the Impact of Annealing on Interface and Border Traps in the Cr/HfO2/Al2O3/MoS2 System P Zhao, A Padovani, P Bolshakov, A Khosravi, L Larcher, PK Hurley, ... ACS Applied Electronic Materials 1 (8), 1372-1377, 2019 | 27 | 2019 |
| High-κ Dielectric on ReS2: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al2O3 A Khosravi, R Addou, M Catalano, J Kim, RM Wallace Materials 12 (7), 1056, 2019 | 16 | 2019 |
| Doping-Induced Schottky-Barrier Realignment for Unipolar and High Hole Current WSe2 Devices With >108 On/Off Ratio CS Pang, TYT Hung, A Khosravi, R Addou, RM Wallace, Z Chen IEEE Electron Device Letters 41 (7), 1122-1125, 2020 | 11 | 2020 |
| Investigation of critical interfaces in few-layer MoS2 field effect transistors with high-k dielectrics CD Young, P Bolshakov, P Zhao, C Smyth, A Khosravi, PK Hurley, ... ECS Transactions 80 (1), 219, 2017 | 7 | 2017 |
| 2D topological insulator bismuth selenide analyzed by in situ XPS X Wang, CM Smyth, A Khosravi, CR Cormier, JR Shallenberger, R Addou, ... Surface Science Spectra 26 (2), 2019 | 3 | 2019 |
| Surface and Interface Investigation of Novel Materials for Future Applications in Logic and Memory Devices A Khosravi The University of Texas at Dallas, 2020 | | 2020 |
| Dual-Gate MoS₂ Transistors with Sub-10 NM Top-Gate High-K Dielectrics P Bolshakov, A Khosravi, P Zhao, PK Hurley, CL Hinkle, RM Wallace, ... American Institute of Physics Inc., 2019 | | 2019 |
| Contact Engineering for Dual-Gate MoS2 Transistors with O2 Plasma Exposure P Bolshakov, CM Smyth, A Khosravi, P Zhao, A Azcatl, G Mirabelli, ... IEEE Semiconductor Interface Specialist Conference (SISC), 2018 | | 2018 |
| Electrical characterization of process induced effects on non-silicon devices CD Young, P Bolshakov, RA Rodriguez-Davila, P Zhao, A Khosravi, ... 2018 International Conference on IC Design & Technology (ICICDT), 173-176, 2018 | | 2018 |
| Sensitivity of high-k encapsulated MoS2 transistors to I-V measurement execution time P Bolshakov, A Khosravi, P Zhao, RM Wallace, CD Young, PK Hurley 2018 IEEE International Conference on Microelectronic Test Structures (ICMTS …, 2018 | | 2018 |
| Evaluation of border traps and interface traps in HfO2/MoS2 gate stacks by capacitance-voltage analysis A Khosravi, A Azcatl, P Bolshakov, G Mirabelli, P Zhao, E Caruso, ... IOP Publishing Ltd., 2018 | | 2018 |
| Investigation of Critical Interfaces in Few-Layer MoS2 Field Effect Transistors with High-k Dielectrics Y CD, P Bolshakov, P Zhao, S CM, A Khosravi, PK Hurley Semiconductors, Dielectrics, and Metals for Nanoelectronics 15: In Memory of …, 0 | | |
