| Characterization of ZnO thin films grown on different p-Si substrate elaborated by solgel spin-coating method W Chebil, A Fouzri, A Fargi, B Azeza, Z Zaaboub, V Sallet Materials Research Bulletin 70, 719-727, 2015 | 59 | 2015 |
| Electro-thermal modeling for InxGa1-xN/GaN based quantum well heterostructures MH Gazzah, B Chouchen, A Fargi, H Belmabrouk Materials Science in Semiconductor Processing 93, 231-237, 2019 | 23 | 2019 |
| High temperature and voltage dependent electrical and dielectric properties of TiN/Al2O3/p-Si MIS structure S Hlali, A Farji, N Hizem, L Militaru, A Kalboussi, A Souifi Journal of Alloys and Compounds 713, 194-203, 2017 | 20 | 2017 |
| The important contribution of photo-generated charges to the silicon nanocrystals photo-charging/discharging-response time at room temperature in MOS-photodetectors S Chatbouri, M Troudi, A Fargi, A Kalboussi, A Souifi Superlattices and Microstructures 94, 93-100, 2016 | 8 | 2016 |
| Analysis of the relationship between the kink effect and the indium levels in MOS transistors N Hizem, A Fargi, A Kalboussi, A Souifi Materials Science and Engineering: B 178 (20), 1458-1463, 2013 | 6 | 2013 |
| Investigation of the kink effect in indium–doped silicon for sub 100 nm N channel MOSFET technology A Fargi, N Hizem, A Kalboussi International journal of nanotechnology 10 (5-7), 523-532, 2013 | 3 | 2013 |
| Electrical analysis of indium deep levels effects on kink phenomena of silicon NMOSFETs A Fargi, N Hizem, A Kalboussi, A Souifi World Journal of Nano Science and Engineering 2014, 2014 | 2 | 2014 |
| Temperature Dependent Analytical Model for the Threshold Voltage of the SiC VJFET with a Lateral Asymmetric Channel S Ghedira, A Fargi, K Besbes Electronics 10 (12), 1494, 2021 | 1 | 2021 |
| Novel Parameters Extraction Method of High‐Speed PIN Diode for Power Integrated Circuit S Ghedira, A Fargi Nanodevices for Integrated Circuit Design, 181-210, 2023 | | 2023 |
| Kink Effect in Field Effect Transistors: Different Models and Techniques A Fargi, S Ghedira, A Kalboussi Nanodevices for Integrated Circuit Design, 43-60, 2023 | | 2023 |
| Capacitance spectroscopy of InAs quantum dots inserted in an AlGaAs/GaAs HEMT for photodetector applications A Fargi, S Ghedira, A Kalboussi AIP Advances 13 (10), 2023 | | 2023 |
| On The Effect Of Optical Power On Quantum Dot HEMT Transistor S Ghedira, A Fargi, A Kalboussi 2023 20th International Multi-Conference on Systems, Signals & Devices (SSD …, 2023 | | 2023 |
| Temperature Dependent Analytical Model for the Threshold Voltage of the SiC VJFET with a Lateral Asymmetric Channel. Electronics 2021, 10, 1494 S Ghedira, A Fargi, K Besbes s Note: MDPI stays neutral with regard to jurisdictional claims in published …, 2021 | | 2021 |
