| Drift-diffusion and hydrodynamic modeling of current collapse in GaN HEMTs for RF power application S Faramehr, K Kalna, P Igić Semiconductor Science and Technology 29 (2), 025007, 2014 | 43 | 2014 |
| Design and simulation of a novel 1400 V–4000 V enhancement mode buried gate GaN HEMT for power applications S Faramehr, K Kalna, P Igić Semiconductor Science and Technology 29 (11), 115020, 2014 | 17 | 2014 |
| Dual-drain GaN magnetic sensor compatible with GaN RF power technology P Igic, N Jankovic, J Evans, M Elwin, S Batcup, S Faramehr IEEE Electron Device Letters 39 (5), 746-748, 2018 | 16 | 2018 |
| Operational frequency degradation induced trapping in scaled GaN HEMTs B Ubochi, S Faramehr, K Ahmeda, P Igić, K Kalna Microelectronics Reliability 71, 35-40, 2017 | 14 | 2017 |
| Study of GaN dual-drain magnetic sensor performance at elevated temperatures BR Thomas, S Faramehr, DC Moody, JE Evans, MP Elwin, P Igić IEEE Transactions on Electron Devices 66 (4), 1937-1941, 2019 | 13 | 2019 |
| Analysis of gan maghemts S Faramehr, N Janković, P Igić Semiconductor Science and Technology 33 (9), 095015, 2018 | 13 | 2018 |
| Analysis of gan hemts switching transients using compact model S Faramehr, P Igić IEEE Transactions on Electron Devices 64 (7), 2900-2905, 2017 | 13 | 2017 |
| Analysis of GaN MagFETs compatible with RF power technology S Faramehr, BR Thomas, N Janković, JE Evans, MP Elwin, P Igić 2018 41st International Convention on Information and Communication …, 2018 | 11 | 2018 |
| High sensitivity magnetic sensors compatible with bulk silicon and SOI IC technology P Igić, O Kryvchenkova, S Faramehr, S Batcup, N Janković 2017 IEEE 30th International Conference on Microelectronics (MIEL), 55-59, 2017 | 10 | 2017 |
| Modelling and optimization of GaN capped HEMTs S Faramehr, P Igić, K Kalna The Tenth International Conference on Advanced Semiconductor Devices and …, 2014 | 10 | 2014 |
| Modeling of 2DEG and 2DHG in i-GaN capped AlGaN/AlN/GaN HEMTs S Faramehr, K Kalna, P Igić 2014 29th International Conference on Microelectronics Proceedings-MIEL 2014 …, 2014 | 10 | 2014 |
| DC power line communication (PLC) on 868 MHz and 2.4 GHz wired RF transceivers V Marsic, T Amietszajew, P Igic, S Faramehr, J Fleming Sensors 22 (5), 2043, 2022 | 8 | 2022 |
| Wireless communication test on 868 MHz and 2.4 GHz from inside the 18650 Li-ion enclosed metal shell V Marsic, T Amietszajew, P Igic, S Faramehr, J Fleming Sensors 22 (5), 1966, 2022 | 8 | 2022 |
| Development of GaN transducer and on-chip concentrator for galvanic current sensing S Faramehr, N Poluri, P Igić, N Janković, MM De Souza IEEE Transactions on Electron Devices 66 (10), 4367-4372, 2019 | 8 | 2019 |
| Impact of Li-ion battery on system’s overall impedance and received signal strength for power line communication (PLC) V Marsic, T Amietszajew, C Gardner, P Igic, S Faramehr, J Fleming Sensors 22 (7), 2634, 2022 | 7 | 2022 |
| Buried RF Sensors for Smart Road Infrastructure: Empirical Communication Range Testing, Propagation by Line of Sight, Diffraction and Reflection Model and Technology Comparison … V Marsic, S Faramehr, J Fleming, P Ball, S Ou, P Igic Sensors 23 (3), 1669, 2023 | 3 | 2023 |
| Coil Design for Integration with GaN Hall-Effect Sensors V Marsic, S Faramehr, P Igic 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe …, 2022 | 3 | 2022 |
| Influence of Current Collapse due to Bias Effect on GaN-HEMTs Characteristics in Saturation Region X Lu, A Videt, K Li, S Faramehr, P Igic, N Idir 2022 24th European Conference on Power Electronics and Applications (EPE'22 …, 2022 | 3 | 2022 |
| A physics-based electrical model of a magnetically sensitive AlGaN/GaN HEMT N Jankovic, S Faramehr, P Igic Journal of Computational Electronics 21 (1), 191-196, 2022 | 3 | 2022 |
| Simulation of solo GaN IGBTs S Faramehr, P Igić 2017 IEEE 30th International Conference on Microelectronics (MIEL), 75-78, 2017 | 3 | 2017 |
