关注
Fakhereddine Khemloul
Fakhereddine Khemloul
Université Amar Telidji - Laghouat
在 lagh-univ.dz 的电子邮件经过验证
标题
引用次数
引用次数
年份
Cost-saving and performance-enhancement of CuInGaSe solar cells by adding CuZnSnSe as a second absorber
N Selmane, A Cheknane, F Khemloul, MHS Helal, HS Hilal
Solar Energy 234, 64-80, 2022
152022
Structural, electronic and magnetic properties of the manganese telluride layers AMnTe2 (A= K, Rb, Cs) from first-principles calculations
A Benmakhlouf, Y Bourourou, A Bouhemadou, A Bentabet, F Khemloul, ...
Journal of Magnetism and Magnetic Materials 465, 430-436, 2018
142018
Optimizing performance and energy consumption in GaN (n)/In x Ga 1-x N/GaN/AlGaN/GaN (p) light emitting diodes by quantum-well number and mole fraction
N SELMANE, A CHEKNANE, F KHEMLOUL, H Hilal, MHS HELAL, ...
12023
Simulation numérique d'une nouvelle structure de cellule solaire à base de deux couches absorbantes CIGS et CZTSe
N Selmane, F Khemloul
Revue des sciences et sciences de l’ingénieur 9 (1), 51-60, 2023
2023
Corrigendum to “Structural, electronic and magnetic properties of the manganese telluride layers AMnTe2 (A= K, Rb, Cs) from first-principles calculations”[J. Magn. Magn. Mater …
A Benmakhlouf, Y Bourourou, A Bouhemadou, A Bentabet, F Khemloul, ...
Journal of Magnetism and Magnetic Materials 498, 166210, 2020
2020
Structural, electronic and magnetic properties of the manganese telluride layers AMnTe (2)(A= K, Rb, Cs) from first-principles calculations (vol 465, pg 430, 2018)
GB Berhe, D Benmakhlouf, CY Bourourou, B Bouhemadou, W Bentabet, ...
Journal of Magnetism and Magnetic Materials 498, 2020
2020
Thermoelectric Properties of Binary Lithium-Based Compounds Li3Pn (Pn= Sb, Bi)
F Khemloul, M Halit, A Benmakhlouf, S Maabed, M Bouchenafa, ...
eNergetics 2022 6 (3.369), 187, 0
Optimization of Some Physical Properties of a New Solar Cell Structure based CIGS and CZTSe Absorber Layers Study: A Numerical Simulation
N Selmane, FA Boukhelkhal, A Cheknane, F Khemloul
eNergetics 2022, 83, 0
Tailoring the characteristics of a GaN (n)/InxGa1-xN/GaN/AlGaN/GaN (p) light emitting diode by quantum well number and indium mole fraction
N Selmane, A Cheknane, F Khemloul, HS Hilal, MHS Helal, N Baydogan
Gan/Algan/Gan (P) Light Emitting Diode by Quantum Well Number and Indium …, 0
First-principles Study of Optoelectronic and Transport Properties of BCs3Pn2 (Pn= P, As) Materials for Solar Cells Applications
F Khemloul, M Halit, A Benmakhlouf, S Maabed, M Bouchenafa, ...
eNergetics 2022, 211, 0
Performance-enhancement of ZnO/a-Si: H/n a-Si: H/ic-Si/p/BSF/Al Heterojunction Solar Cells by Optimization of Some Physical Parameters
N Selmane, FA Boukhelkhal, A Cheknane, F Khemloul
eNergetics 2022, 305, 0
系统目前无法执行此操作,请稍后再试。
文章 1–11