| Efficiency droop due to electron spill-over and limited hole injection in III-nitride visible light-emitting diodes employing lattice-matched InAlN electron blocking layers S Choi, MH Ji, J Kim, HJ Kim, MM Satter, PD Yoder, JH Ryou, RD Dupuis, ... Applied Physics Letters 101 (16), 161110, 2012 | 97 | 2012 |
| Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates XH Li, T Detchprohm, TT Kao, MM Satter, SC Shen, PD Yoder, RD Dupuis, ... Applied Physics Letters 105 (14), 141106, 2014 | 96 | 2014 |
| Deep-ultraviolet lasing at 243 nm from photo-pumped AlGaN/AlN heterostructure on AlN substrate Z Lochner, TT Kao, YS Liu, XH Li, MM Satter, SC Shen, PD Yoder, ... Applied Physics Letters 102 (10), 101110, 2013 | 96 | 2013 |
| Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate Xiao-Hang Li, Tsung-Ting Kao, Md. Mahbub Satter, Yong O. Wei, Shuo Wang ... Applied Physics Letters 106, 041115, 0 | 63* | |
| Growth of high‐quality AlN layers on sapphire substrates at relatively low temperatures by metalorganic chemical vapor deposition XH Li, S Wang, H Xie, YO Wei, TT Kao, M Satter, SC Shen, ... physica status solidi (b) 252 (5), 1089-1095, 2015 | 57 | 2015 |
| Temperature dependence of the crystalline quality of AlN layer grown on sapphire substrates by metalorganic chemical vapor deposition XH Li, YO Wei, S Wang, H Xie, TT Kao, MM Satter, SC Shen, PD Yoder, ... Journal of Crystal Growth 414, 76-80, 2015 | 44 | 2015 |
| Sub-250 nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO2/SiO2 dielectric mirrors TT Kao, YS Liu, MM Satter, XH Li, Z Lochner, PD Yoder, T Detchprohm, ... Applied Physics Letters 103 (21), 211103, 2013 | 44 | 2013 |
| Design and analysis of 250-nm AlInN laser diodes on AlN substrates using tapered electron blocking layers MM Satter, HJ Kim, Z Lochner, JH Ryou, SC Shen, RD Dupuis, PD Yoder Quantum Electronics, IEEE Journal of 48 (5), 703-711, 2012 | 44 | 2012 |
| Modeling effects of interface traps on the gate C–V characteristics of MOS devices on alternative high-mobility substrates MM Satter, A Haque Solid-State Electronics 54 (6), 621-627, 2010 | 30 | 2010 |
| On the enhancement of the drain current in indium-rich InGaAs surface-channel MOSFETs ATM Golam Sarwar, MR Siddiqui, MM Satter, A Haque Electron Devices, IEEE Transactions on 59 (6), 1653-1660, 2012 | 24 | 2012 |
| AlGaN-Based Vertical Injection Laser Diodes Using Inverse Tapered p-Waveguide for Efficient Hole Transport MM Satter, Z Lochner, TT Kao, YS Liu, XH Li, SC Shen, RD Dupuis, ... Quantum Electronics, IEEE Journal of 50 (3), 166-173, 2014 | 21 | 2014 |
| Optically pumped AlGaN quantum‐well lasers at sub‐250 nm grown by MOCVD on AlN substrates YS Liu, Z Lochner, TT Kao, M Satter, XH Li, JH Ryou, SC Shen, PD Yoder, ... physica status solidi (c) 11 (2), 258-260, 2014 | 20 | 2014 |
| Polarization Matching in AlGaN-Based Multiple-Quantum-Well Deep Ultraviolet Laser Diodes on AlN Substrates Using Quaternary AlInGaN Barriers MM Satter, Z Lochner, JH Ryou, SC Shen, RD Dupuis, PD Yoder Lightwave Technology, Journal of 30 (18), 3017-3025, 2012 | 13 | 2012 |
| A self-consistent algorithm to extract interface trap states of MOS devices on alternative high-mobility substrates MM Satter, AE Islam, D Varghese, MA Alam, A Haque Solid-State Electronics 56 (1), 141-147, 2011 | 12 | 2011 |
| Lateral carrier confinement and threshold current reduction in InGaN QW lasers with deeply etched mesa MM Satter, PD Yoder Optical and quantum electronics 42 (11-13), 747-754, 2011 | 11 | 2011 |
| Lateral carrier confinement and threshold current reduction in GaN QW lasers with deeply etched mesa MM Satter, PD Yoder 10th International Conference on Numerical Simulation of Optoelectronic …, 2010 | 11 | 2010 |
| Inverse-Tapered P-Waveguide for Vertical Hole Transport in High-[Al] AlGaN Emitters YS Liu, TT Kao, M Satter, Z Lochner, SC Shen, T Detchprohm, D Yoder, ... IEEE, 2015 | 10 | 2015 |
| Stimulated emission at 257 nm from optically‐pumped AlGaN/AlN heterostructure on AlN substrate Z Lochner, XH Li, TT Kao, M Satter, HJ Kim, SC Shen, PD Yoder, JH Ryou, ... physica status solidi (a) 210 (9), 1768-1770, 2013 | 8 | 2013 |
| Theoretical analysis of strategies for improving p‐type conductivity in wurtzite III‐nitride devices for high‐power opto‐and microelectronic applications M Satter, YS Liu, TT Kao, Z Lochner, X Li, JH Ryou, SC Shen, ... physica status solidi (c) 11 (3‐4), 828-831, 2014 | 4 | 2014 |
| Optically-pumped deep-ultraviolet AlGaN multi-quantum-well lasers grown by metalorganic chemical vapor deposition YS Liu, TT Kao, MM Satter, Z Lochner, XH Li, SC Shen, PD Yoder, ... SPIE OPTO, 90020H-90020H-7, 2014 | 3 | 2014 |
