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Yong Han
Yong Han
Ames National Laboratory & Department of Physics and Astronomy, Iowa State University
在 ameslab.gov 的电子邮件经过验证 - 首页
标题
引用次数
引用次数
年份
Growth morphology and properties of metals on graphene
X Liu, Y Han, JW Evans, AK Engstfeld, J R. Behm, MC Tringides, ...
Progress in Surface Science 90 (4), 397-443, 2015
1662015
SiO2-Enhanced Structural Stability and Strong Adhesion with a New Binder of Konjac Glucomannan Enables Stable Cycling of Silicon Anodes for Lithium-Ion Batteries
S Guo, H Li, Y Li, Y Han, K Chen, G Xu, Y Zhu, X Hu
Advanced Energy Materials 8 (24), 1800434, 2018
1472018
Geometric constant defining shape transitions of carbon nanotubes under pressure
J Zang, A Treibergs, Y Han, F Liu
Physical review letters 92 (10), 105501, 2004
1232004
Quantum size effect on adatom surface diffusion
LY Ma, L Tang, ZL Guan, K He, K An, XC Ma, JF Jia, QK Xue, Y Han, ...
Physical review letters 97 (26), 266102, 2006
942006
Surface energies, adhesion energies, and exfoliation energies relevant to copper-graphene and copper-graphite systems
Y Han, KC Lai, A Lii-Rosales, MC Tringides, JW Evans, PA Thiel
Surface Science 685, 48-58, 2019
902019
Quantum size effects in metal nanofilms: Comparison of an electron-gas model and density functional theory calculations
Y Han, DJ Liu
Physical Review B 80 (15), 155404, 2009
892009
Reshaping, Intermixing, and Coarsening for Metallic Nanocrystals: Nonequilibrium Statistical Mechanical and Coarse-Grained Modeling
KC Lai, Y Han, P Spurgeon, W Huang, PA Thiel, DJ Liu, JW Evans
Chemical Reviews 119 (11), 6670, 2019
582019
How a silver dendritic mesocrystal converts to a single crystal
J Fang, B Ding, X Song, Y Han
Applied Physics Letters 92 (17), 173120, 2008
562008
Comment on “Capture-Zone Scaling in Island Nucleation: Universal Fluctuation Behavior”
M Li, Y Han, JW Evans
Physical Review Letters 104 (14), 149601, 2010
422010
Sierpiński Structure and Electronic Topology in Bi Thin Films on InSb(111)B Surfaces
C Liu, Y Zhou, G Wang, Y Yin, C Li, H Huang, D Guan, Y Li, S Wang, ...
Physical Review Letters 126 (17), 176102, 2021
412021
Kinetics of facile bilayer island formation at low temperature: Ag/NiAl (110)
Y Han, B Unal, F Qin, D Jing, CJ Jenks, DJ Liu, PA Thiel, JW Evans
Physical review letters 100 (11), 116105, 2008
392008
Formation of Multilayer Cu Islands Embedded beneath the Surface of Graphite: Characterization and Fundamental Insights
A Lii-Rosales, Y Han, JW Evans, D Jing, Y Zhou, MC Tringides, M Kim, ...
The Journal of Physical Chemistry C 122 (8), 4454-4469, 2018
372018
Scanning tunneling microscopy and density functional theory study of initial bilayer growth of Ag films on NiAl (110)
B Unal, F Qin, Y Han, DJ Liu, D Jing, AR Layson, CJ Jenks, JW Evans, ...
Physical Review B 76 (19), 195410, 2007
362007
Interplay between quantum size effect and strain effect on growth of nanoscale metal thin films
M Liu, Y Han, L Tang, JF Jia, QK Xue, F Liu
Physical Review B 86 (12), 125427, 2012
322012
Directed assembly of Ru nanoclusters on Ru (0001)-supported graphene: STM studies and atomistic modeling
AK Engstfeld, HE Hoster, RJ Behm, LD Roelofs, X Liu, CZ Wang, Y Han, ...
Physical Review B 86 (8), 085442, 2012
322012
Self-assembly of metal nanostructures on binary alloy surfaces
T Duguet, Y Han, C Yuen, D Jing, B Ünal, JW Evans, PA Thiel
Proceedings of the National Academy of Sciences of the United States of …, 2011
322011
Angular momentum projection of cranked wave function
Y Han
Chinese Physics C 24 (6), 546-553, 2000
32*2000
Ab Initio Thermodynamics and Kinetics for Coalescence of Two-Dimensional Nanoislands and Nanopits on Metal (100) Surfaces
Y Han, CR Stoldt, PA Thiel, JW Evans
The Journal of Physical Chemistry C 120 (38), 21617, 2016
312016
Real-Time Ab Initio KMC Simulation of the Self-Assembly and Sintering of Bimetallic Epitaxial Nanoclusters: Au+Ag on Ag (100)
Y Han, DJ Liu, JW Evans
Nano letters 14 (8), 4646-4652, 2014
312014
Reverse-engineering of graphene on metal surfaces: a case study of embedded ruthenium
A Lii-Rosales, Y Han, KM Yu, D Jing, N Anderson, D Vaknin, ...
Nanotechnology 29 (50), 505601, 2018
302018
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