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Silicon carbide as a platform for power electronics CR Eddy Jr, DK Gaskill Science 324 (5933), 1398-1400, 2009 | 313 | 2009 |
Technique for the dry transfer of epitaxial graphene onto arbitrary substrates JD Caldwell, TJ Anderson, JC Culbertson, GG Jernigan, KD Hobart, ... ACS nano 4 (2), 1108-1114, 2010 | 284 | 2010 |
Group III-nitride growth on silicon or silicon germanium substrates and method and devices therefor MA Mastro, CR Eddy Jr, S Akbar US Patent 7,928,471, 2011 | 262 | 2011 |
Hall effect mobility of epitaxial graphene grown on silicon carbide JL Tedesco, BL VanMil, RL Myers-Ward, JM McCrate, SA Kitt, ... Applied Physics Letters 95 (12), 2009 | 248 | 2009 |
Quantum linear magnetoresistance in multilayer epitaxial graphene AL Friedman, JL Tedesco, PM Campbell, JC Culbertson, E Aifer, ... Nano letters 10 (10), 3962-3965, 2010 | 244 | 2010 |
Correlating Raman spectral signatures with carrier mobility in epitaxial graphene: a guide to achieving high mobility on the wafer scale JA Robinson, M Wetherington, JL Tedesco, PM Campbell, X Weng, J Stitt, ... Nano letters 9 (8), 2873-2876, 2009 | 240 | 2009 |
Top-gated epitaxial graphene FETs on Si-face SiC wafers with a peak transconductance of 600 mS/mm JS Moon, D Curtis, S Bui, M Hu, DK Gaskill, JL Tedesco, P Asbeck, ... IEEE Electron Device Letters 31 (4), 260-262, 2010 | 190 | 2010 |
Reduced self-heating in AlGaN/GaN HEMTs using nanocrystalline diamond heat-spreading films MJ Tadjer, TJ Anderson, KD Hobart, TI Feygelson, JD Caldwell, CR Eddy, ... IEEE electron device letters 33 (1), 23-25, 2011 | 156 | 2011 |
A (001) β-Ga2O3 MOSFET with+ 2.9 V threshold voltage and HfO2 gate dielectric MJ Tadjer, NA Mahadik, VD Wheeler, ER Glaser, L Ruppalt, AD Koehler, ... ECS Journal of Solid State Science and Technology 5 (9), P468, 2016 | 155 | 2016 |
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Structural, Optical, and Electrical Characterization of Monoclinic β-Ga2O3 Grown by MOVPE on Sapphire Substrates MJ Tadjer, MA Mastro, NA Mahadik, M Currie, VD Wheeler, JA Freitas, ... Journal of Electronic Materials 45, 2031-2037, 2016 | 147 | 2016 |
Conductance anisotropy in epitaxial graphene sheets generated by substrate interactions MK Yakes, D Gunlycke, JL Tedesco, PM Campbell, RL Myers-Ward, ... Nano letters 10 (5), 1559-1562, 2010 | 146 | 2010 |
Surface depletion effects in semiconducting nanowires BS Simpkins, MA Mastro, CR Eddy, PE Pehrsson Journal of Applied Physics 103 (10), 2008 | 142 | 2008 |
Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaN BN Feigelson, TJ Anderson, M Abraham, JA Freitas, JK Hite, CR Eddy, ... Journal of crystal growth 350 (1), 21-26, 2012 | 134 | 2012 |
Large-area transparent conductive few-layer graphene electrode in GaN-based ultra-violet light-emitting diodes BJ Kim, C Lee, Y Jung, K Hyeon Baik, MA Mastro, JK Hite, CR Eddy, ... Applied Physics Letters 99 (14), 2011 | 129 | 2011 |
Morphology characterization of argon-mediated epitaxial graphene on C-face SiC JL Tedesco, GG Jernigan, JC Culbertson, JK Hite, Y Yang, KM Daniels, ... Applied Physics Letters 96 (22), 2010 | 123 | 2010 |
Development of solar-blind photodetectors based on Si-implanted β-Ga2O3 S Oh, Y Jung, MA Mastro, JK Hite, CR Eddy, J Kim Optics Express 23 (22), 28300-28305, 2015 | 122 | 2015 |
Low-phase-noise graphene FETs in ambipolar RF applications JS Moon, D Curtis, D Zehnder, S Kim, DK Gaskill, GG Jernigan, ... IEEE Electron Device Letters 32 (3), 270-272, 2011 | 120 | 2011 |