Tuning the Optical, Magnetic, and Electrical Properties of ReSe2 by Nanoscale Strain Engineering S Yang, C Wang, H Sahin, H Chen, Y Li, SS Li, A Suslu, FM Peeters, ... Nano letters 15 (3), 1660-1666, 2015 | 430 | 2015 |
Self-Driven Photodetector and Ambipolar Transistor in Atomically Thin GaTe-MoS2 p–n vdW Heterostructure S Yang, C Wang, C Ataca, Y Li, H Chen, H Cai, A Suslu, JC Grossman, ... ACS applied materials & interfaces 8 (4), 2533-2539, 2016 | 180 | 2016 |
Enhanced current rectification and self-powered photoresponse in multilayer p-MoTe 2/n-MoS 2 van der Waals heterojunctions B Wang, S Yang, C Wang, M Wu, L Huang, Q Liu, C Jiang Nanoscale 9 (30), 10733-10740, 2017 | 82 | 2017 |
Emerging of two-dimensional materials in novel memristor Z Zhou, F Yang, S Wang, L Wang, X Wang, C Wang, Y Xie, Q Liu Frontiers of Physics 17, 1-14, 2022 | 44 | 2022 |
Progresses on new generation laser direct writing technique S Wang, Z Zhou, B Li, C Wang, Q Liu Materials Today Nano 16, 100142, 2021 | 35 | 2021 |
Research progress of optoelectronic devices based on two-dimensional MoS2 materials LR Zou, DD Sang, Y Yao, XT Wang, YY Zheng, NZ Wang, C Wang, ... Rare Metals 42 (1), 17-38, 2023 | 32 | 2023 |
Recent progress in all-inorganic metal halide nanostructured perovskites: Materials design, optical properties, and application L Cao, X Liu, Y Li, X Li, L Du, S Chen, S Zhao, C Wang Frontiers of Physics 16, 1-20, 2021 | 32 | 2021 |
Latest advance on seamless metal-semiconductor contact with ultralow Schottky barrier in 2D-material-based devices S Chen, S Wang, C Wang, Z Wang, Q Liu Nano Today 42, 101372, 2022 | 31 | 2022 |
Gate-tunable diode-like current rectification and ambipolar transport in multilayer van der Waals ReSe 2/WS 2 p–n heterojunctions C Wang, S Yang, W Xiong, C Xia, H Cai, B Chen, X Wang, X Zhang, Z Wei, ... Physical Chemistry Chemical Physics 18 (40), 27750-27753, 2016 | 31 | 2016 |
A Review on the Progress of Optoelectronic Devices Based on TiO2 Thin Films and Nanomaterials S Ge, D Sang, L Zou, Y Yao, C Zhou, H Fu, H Xi, J Fan, L Meng, C Wang Nanomaterials 13 (7), 1141, 2023 | 27 | 2023 |
Perseverance of direct bandgap in multilayer 2D PbI2 under an experimental strain up to 7.69% L Du, C Wang, W Xiong, S Zhang, C Xia, Z Wei, J Li, S Tongay, F Yang, ... 2D Materials 6 (2), 025014, 2019 | 26 | 2019 |
Room-temperature third-order nonlinear Hall effect in Weyl semimetal TaIrTe4 C Wang, RC Xiao, H Liu, Z Zhang, S Lai, C Zhu, H Cai, N Wang, S Chen, ... National Science Review 9 (12), nwac020, 2022 | 23 | 2022 |
Strain‐induced band‐gap tuning of 2D‐SnSSe flakes for application in flexible sensors L Du, C Wang, W Xiong, B Wei, F Yang, S Chen, L Ma, X Wang, C Xia, ... Advanced Materials Technologies 5 (1), 1900853, 2020 | 23 | 2020 |
Synthesis of atomically thin GaSe wrinkles for strain sensors C Wang, SX Yang, HR Zhang, LN Du, L Wang, FY Yang, XZ Zhang, Q Liu Frontiers of Physics 11, 1-5, 2016 | 19 | 2016 |
Enhancing light emission efficiency without color change in post-transition metal chalcogenides C Wang, S Yang, H Cai, C Ataca, H Chen, X Zhang, J Xu, B Chen, K Wu, ... Nanoscale 8 (11), 5820-5825, 2016 | 18 | 2016 |
Two-dimensional MoS2/diamond based heterojunctions for excellent optoelectronic devices: current situation and new perspectives LR Zou, XD Lyu, DD Sang, Y Yao, SH Ge, XT Wang, CD Zhou, HL Fu, ... Rare Metals 42 (10), 3201-3211, 2023 | 15 | 2023 |
A graphene P–N junction induced by single-gate control of dielectric structures X Xu, C Wang, Y Liu, X Wang, N Gong, Z Zhu, B Shi, M Ren, W Cai, ... Journal of Materials Chemistry C 7 (29), 8796-8802, 2019 | 15 | 2019 |
Application of high-pressure technology in exploring mechanical properties of high-entropy alloys SC Li, QL Wang, Y Yao, DD Sang, HW Zhang, GZ Zhang, C Wang, CL Liu Tungsten 5 (1), 50-66, 2023 | 13 | 2023 |
Anisotropic properties of tellurium nanoflakes probed by polarized Raman and transient absorption microscopy: Implications for polarization-sensitive applications C Wang, P Wang, S Chen, W Wen, W Xiong, Z Liu, Y Liu, J He, Y Wang ACS Applied Nano Materials 5 (2), 1767-1774, 2022 | 11 | 2022 |
High-performance optoelectronic memory based on bilayer MoS 2 grown by Au catalyst F Yang, S Chen, H Feng, C Wang, X Wang, S Wang, Z Zhou, B Li, L Ma, ... Journal of Materials Chemistry C 8 (8), 2664-2668, 2020 | 10 | 2020 |