Supertoughening in B1 transition metal nitride alloys by increased valence electron concentration DG Sangiovanni, L Hultman, V Chirita Acta Materialia 59 (5), 2121-2134, 2011 | 199 | 2011 |
Electronic mechanism for toughness enhancement in TixM1−xN (M= Mo and W) DG Sangiovanni, V Chirita, L Hultman Physical Review B 81 (10), 104107, 2010 | 178 | 2010 |
Toughness enhancement in hard ceramic thin films by alloy design H Kindlund, DG Sangiovanni, L Martinez-de-Olcoz, J Lu, J Jensen, J Birch, ... APL Materials 1 (4), 042104, 2013 | 135 | 2013 |
Toughness enhancement in TiAlN-based quarternary alloys DG Sangiovanni, V Chirita, L Hultman Thin Solid Films 520 (11), 4080-4088, 2012 | 105 | 2012 |
Dynamic and structural stability of cubic vanadium nitride AB Mei, O Hellman, N Wireklint, CM Schlepütz, DG Sangiovanni, B Alling, ... Physical Review B 91 (5), 054101, 2015 | 97 | 2015 |
Toughness enhancement in highly NbN-alloyed Ti-Al-N hard coatings M Mikula, D Plašienka, DG Sangiovanni, M Sahul, T Roch, M Truchlý, ... Acta Materialia 121, 59-67, 2016 | 92 | 2016 |
Ab initio molecular dynamics of atomic-scale surface reactions: Insights into metal organic chemical vapor deposition of AlN on graphene DG Sangiovanni, GK Gueorguiev, A Kakanakova-Georgieva Physical Chemistry Chemical Physics 20 (26), 17751-17761, 2018 | 87 | 2018 |
Vacancy-induced toughening in hard single-crystal V0.5Mo0.5Nx/MgO(001) thin films H Kindlund, DG Sangiovanni, J Lu, J Jensen, V Chirita, J Birch, I Petrov, ... Acta materialia 77, 394-400, 2014 | 86 | 2014 |
A review of the intrinsic ductility and toughness of hard transition-metal nitride alloy thin films H Kindlund, DG Sangiovanni, I Petrov, JE Greene, L Hultman Thin Solid Films 688, 137479, 2019 | 84 | 2019 |
Effects of phase stability, lattice ordering, and electron density on plastic deformation in cubic TiWN pseudobinary transition-metal nitride alloys DG Sangiovanni, L Hultman, V Chirita, I Petrov, JE Greene Acta Materialia 103, 823-835, 2016 | 66 | 2016 |
Nitrogen vacancy, self-interstitial diffusion, and Frenkel-pair formation/dissociation in TiN studied by ab initio and classical molecular dynamics with optimized … DG Sangiovanni, B Alling, P Steneteg, L Hultman, IA Abrikosov Physical Review B 91 (5), 054301, 2015 | 66 | 2015 |
Nanoscale phenomena ruling deposition and intercalation of AlN at the graphene/SiC interface A Kakanakova-Georgieva, GK Gueorguiev, DG Sangiovanni, ... Nanoscale 12 (37), 19470-19476, 2020 | 61 | 2020 |
Structure and mechanical properties of TiAlN–WNx thin films T Reeswinkel, DG Sangiovanni, V Chirita, L Hultman, JM Schneider Surface and Coatings Technology 205 (20), 4821-4827, 2011 | 61 | 2011 |
Ab initio and classical molecular dynamics simulations of N2 desorption from TiN(001) surfaces DG Sangiovanni, D Edström, L Hultman, I Petrov, JE Greene, V Chirita Surface Science, 2014 | 60 | 2014 |
Discovering atomistic pathways for supply of metal atoms from methyl-based precursors to graphene surface DG Sangiovanni, R Faccio, GK Gueorguiev, A Kakanakova-Georgieva Physical Chemistry Chemical Physics 25 (1), 829-837, 2023 | 58 | 2023 |
Dynamics of Ti, N, and TiNx (x= 1–3) admolecule transport on TiN(001) surfaces DG Sangiovanni, D Edström, L Hultman, V Chirita, I Petrov, JE Greene Physical Review B 86 (15), 155443, 2012 | 57 | 2012 |
Effect of WN content on toughness enhancement in V1−xWxN/MgO(001) thin films H Kindlund, DG Sangiovanni, J Lu, J Jensen, V Chirita, I Petrov, ... Journal of Vacuum Science & Technology A 32 (3), 2014 | 56 | 2014 |
MOCVD of AlN on epitaxial graphene at extreme temperatures A Kakanakova-Georgieva, IG Ivanov, N Suwannaharn, CW Hsu, I Cora, ... CrystEngComm 23 (2), 385-390, 2021 | 55 | 2021 |
Inherent toughness and fracture mechanisms of refractory transition-metal nitrides via density-functional molecular dynamics DG Sangiovanni Acta Materialia 151, 11-20, 2018 | 54 | 2018 |
Enhancing plasticity in high-entropy refractory ceramics via tailoring valence electron concentration DG Sangiovanni, W Mellor, T Harrington, K Kaufmann, K Vecchio Materials & Design 209, 109932, 2021 | 52 | 2021 |