| On temperature-dependent experimental IV and CV data of Ni/n-GaN Schottky contacts N Yıldırım, K Ejderha, A Turut Journal of Applied Physics 108 (11), 2010 | 128 | 2010 |
| Capacitance–conductance–current–voltage characteristics of atomic layer deposited Au/Ti/Al2O3/n-GaAs MIS structures A Turut, A Karabulut, K Ejderha, N Bıyıklı Materials Science in Semiconductor Processing 39, 400-407, 2015 | 125 | 2015 |
| Influence of interface states on the temperature dependence and current–voltage characteristics of Ni/p-InP Schottky diodes K Ejderha, N Yıldırım, A Türüt, B Abay Superlattices and Microstructures 47 (2), 241-252, 2010 | 46 | 2010 |
| Capacitance–conductance characteristics of Au/Ti/Al2O3/n-GaAs structures with very thin Al2O3 interfacial layer A Turut, A Karabulut, K Ejderha, N Bıyıklı Materials Research Express 2 (4), 046301, 2015 | 43 | 2015 |
| Examination by interfacial layer and inhomogeneous barrier height model of temperature-dependent I–V characteristics in Co/p-InP contacts K Ejderha, N Yıldırım, B Abay, A Turut Journal of Alloys and Compounds 484 (1-2), 870-876, 2009 | 41 | 2009 |
| Dependence of characteristic diode parameters on sample temperature in Ni/epitaxy n-Si contacts K Ejderha, A Zengin, I Orak, B Tasyurek, T Kilinc, A Turut Materials science in semiconductor processing 14 (1), 5-12, 2011 | 38 | 2011 |
| The electrical characterizations and illumination response of Co/N-type GaP junction device I Orak, K Ejderha, A Turut Current Applied Physics 15 (9), 1054-1061, 2015 | 30 | 2015 |
| Effect of temperature on the current (capacitance and conductance)–voltage characteristics of Ti/n-GaAs diode K Ejderha, S Duman, C Nuhoglu, F Urhan, A Turut Journal of Applied Physics 116 (23), 2014 | 24 | 2014 |
| The effect of annealing temperature on the electrical characterization of Co/n type GaP Schottky diode I Orak, K Ejderha, E Sönmez, M Alanyalıoğlu, A Turut Materials Research Bulletin 61, 463-468, 2015 | 23 | 2015 |
| The characteristic parameters of Ni/n-6H-SiC devices over a wide measurement temperature range K Ejderha, A Karabulut, N Turkan, A Turut Silicon 9 (3), 395-401, 2017 | 22 | 2017 |
| Determination of contact parameters of Ni/n-GaP Schottky contacts S Duman, K Ejderha, Ö Yiğit, A Türüt Microelectronics Reliability 52 (6), 1005-1011, 2012 | 21 | 2012 |
| Schottky barrier height modification in Au/n-type 6H–SiC structures by PbS interfacial layer Y Gülen, K Ejderha, Ç Nuhoğlu, A Turut Microelectronic engineering 88 (2), 179-182, 2011 | 19 | 2011 |
| Temperature dependence of electrical parameters of the Cu/n-Si metal semiconductor Schottky structures ÖF Bakkaloğlu, K Ejderha, H Efeoğlu, Ş Karataş, A Türüt Journal of Molecular Structure 1224, 129057, 2021 | 18 | 2021 |
| Characterization of CuO/n-Si heterojunction solar cells produced by thermal evaporation R Özmenteş, C Temirci, A Özkartal, K Ejderha, N Yildirim Materials Science-Poland 36 (4), 668-674, 2018 | 18 | 2018 |
| Electrical and optical characteristics of Au/PbS/n-6H–SiC structures prepared by electrodeposition of PbS thin film on n-type 6H–SiC substrate Y Gülen, M Alanyalıoğlu, K Ejderha, Ç Nuhoğlu, A Turut Journal of alloys and compounds 509 (6), 3155-3159, 2011 | 17 | 2011 |
| The Effect of Thermal Annealing and Measurement Temperature on Interface State Density Distribution and Time Constant in Ni/n-GaP Rectifying Contacts K Ejderha, I Orak, S Duman, A Turut Journal of Electronic Materials 47, 3502-3509, 2018 | 15 | 2018 |
| Dependence of Electrical Properties of Ni/n-GaP/Al Schottky Contacts on Measurement Temperature and Thermal Annealing K Ejderha, A Turut Journal of Electronic Materials 50 (12), 6741-6747, 2021 | 12 | 2021 |
| Characteristic diode parameters in thermally annealed Ni/p-InP contacts A Turut, K Ejderha, N Yildirim, B Abay Journal of Semiconductors 37 (4), 044001, 2016 | 11 | 2016 |
| Temperature-dependent current-voltage characteristics in thermally annealed ferromagnetic Co/n-GaN Schottky contacts K Ejderha, N Yıldırm, A Turut The European Physical Journal-Applied Physics 68 (2), 20101, 2014 | 11 | 2014 |
| Responses of Pt/n-InP Schottky diode to electron irradiation in different temperature conditions A Akbay, H Korkut, K Ejderha, T Korkut, A Türüt Journal of Radioanalytical and Nuclear Chemistry 289, 145-148, 2011 | 11 | 2011 |
