| Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopy Z Zhang, E Farzana, AR Arehart, SA Ringel Applied Physics Letters 108 (5), 2016 | 370 | 2016 |
| Modulation-doped β-(Al0. 2Ga0. 8) 2O3/Ga2O3 field-effect transistor S Krishnamoorthy, Z Xia, C Joishi, Y Zhang, J McGlone, J Johnson, ... Applied Physics Letters 111 (2), 2017 | 316 | 2017 |
| β-Gallium oxide power electronics AJ Green, J Speck, G Xing, P Moens, F Allerstam, K Gumaelius, T Neyer, ... Apl Materials 10 (2), 2022 | 266 | 2022 |
| Impact of carbon on trap states in n-type GaN grown by metalorganic chemical vapor deposition A Armstrong, AR Arehart, B Moran, SP DenBaars, UK Mishra, JS Speck, ... Applied Physics Letters 84 (3), 374-376, 2004 | 226 | 2004 |
| Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon A Armstrong, AR Arehart, D Green, UK Mishra, JS Speck, SA Ringel Journal of Applied physics 98 (5), 2005 | 198 | 2005 |
| Influence of metal choice on (010) β-Ga2O3 Schottky diode properties E Farzana, Z Zhang, PK Paul, AR Arehart, SA Ringel Applied Physics Letters 110 (20), 2017 | 192 | 2017 |
| -Ga2O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz Z Xia, H Xue, C Joishi, J Mcglone, NK Kalarickal, SH Sohel, M Brenner, ... IEEE Electron Device Letters 40 (7), 1052-1055, 2019 | 157 | 2019 |
| Metal/BaTiO3/β-Ga2O3 dielectric heterojunction diode with 5.7 MV/cm breakdown field Z Xia, H Chandrasekar, W Moore, C Wang, AJ Lee, J McGlone, ... Applied Physics Letters 115 (25), 2019 | 134 | 2019 |
| Effect of threading dislocation density on Ni∕ n-GaN Schottky diode IV characteristics AR Arehart, B Moran, JS Speck, UK Mishra, SP DenBaars, SA Ringel Journal of applied physics 100 (2), 2006 | 131 | 2006 |
| Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor JM Johnson, Z Chen, JB Varley, CM Jackson, E Farzana, Z Zhang, ... Physical Review X 9 (4), 041027, 2019 | 124 | 2019 |
| Deep level defects in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy E Farzana, E Ahmadi, JS Speck, AR Arehart, SA Ringel Journal of Applied Physics 123 (16), 2018 | 119 | 2018 |
| Impact of deep level defects induced by high energy neutron radiation in β-Ga2O3 E Farzana, MF Chaiken, TE Blue, AR Arehart, SA Ringel Apl Materials 7 (2), 2019 | 118 | 2019 |
| Spatially-resolved spectroscopic measurements of Ec− 0.57 eV traps in AlGaN/GaN high electron mobility transistors DW Cardwell, A Sasikumar, AR Arehart, SW Kaun, J Lu, S Keller, ... Applied Physics Letters 102 (19), 2013 | 117 | 2013 |
| Effects of applied bias and high field stress on the radiation response of GaN/AlGaN HEMTs J Chen, YS Puzyrev, R Jiang, EX Zhang, MW McCurdy, DM Fleetwood, ... IEEE Transactions on Nuclear Science 62 (6), 2423-2430, 2015 | 108 | 2015 |
| Deep level optical and thermal spectroscopy of traps in n-GaN grown by ammonia molecular beam epitaxy AR Arehart, A Corrion, C Poblenz, JS Speck, UK Mishra, SA Ringel Applied Physics Letters 93 (11), 2008 | 108 | 2008 |
| Breakdown Characteristics of -(Al0.22Ga0.78)2O3/Ga2O3 Field-Plated Modulation-Doped Field-Effect Transistors C Joishi, Y Zhang, Z Xia, W Sun, AR Arehart, S Ringel, S Lodha, S Rajan IEEE Electron Device Letters 40 (8), 1241-1244, 2019 | 105 | 2019 |
| Trapping Effects in Si-Doped-Ga2O3MESFETs on an Fe-Doped-Ga2O3Substrate JF McGlone, Z Xia, Y Zhang, C Joishi, S Lodha, S Rajan, SA Ringel, ... IEEE Electron Device Letters 39 (7), 1042-1045, 2018 | 103 | 2018 |
| Probing Charge Transport and Background Doping in Metal‐Organic Chemical Vapor Deposition‐Grown (010) β‐Ga2O3 Z Feng, AFMAU Bhuiyan, Z Xia, W Moore, Z Chen, JF McGlone, ... physica status solidi (RRL)–Rapid Research Letters 14 (8), 2000145, 2020 | 102 | 2020 |
| Evaluation of Low-Temperature Saturation Velocity in -(AlxGa1–x)2O3/Ga2O3 Modulation-Doped Field-Effect Transistors Y Zhang, Z Xia, J Mcglone, W Sun, C Joishi, AR Arehart, SA Ringel, ... IEEE Transactions on Electron Devices 66 (3), 1574-1578, 2019 | 92 | 2019 |
| High electron density β-(Al0. 17Ga0. 83) 2O3/Ga2O3 modulation doping using an ultra-thin (1 nm) spacer layer NK Kalarickal, Z Xia, JF McGlone, Y Liu, W Moore, AR Arehart, SA Ringel, ... Journal of Applied Physics 127 (21), 2020 | 86 | 2020 |
Siddharth RajanElectrical and Computer Engineering, Ohio State University在 ece.osu.edu 的电子邮件经过验证
