| Efficient strain modulation of 2D materials via polymer encapsulation Z Li, Y Lv, L Ren, J Li, L Kong, Y Zeng, Q Tao, R Wu, H Ma, B Zhao, ... Nature communications 11 (1), 1151, 2020 | 307 | 2020 |
| Nanochannel structures in W enhance radiation tolerance W Qin, F Ren, RP Doerner, G Wei, Y Lv, S Chang, M Tang, H Deng, ... Acta Materialia 153, 147-155, 2018 | 77 | 2018 |
| Molybdenum disulfide transistors with enlarged van der Waals gaps at their dielectric interface via oxygen accumulation P Luo, C Liu, J Lin, X Duan, W Zhang, C Ma, Y Lv, X Zou, Y Liu, ... Nature Electronics 5 (12), 849-858, 2022 | 76 | 2022 |
| Rational design of Al2O3/2D perovskite heterostructure dielectric for high performance MoS2 phototransistors J Jiang, X Zou, Y Lv, Y Liu, W Xu, Q Tao, Y Chai, L Liao Nature communications 11 (1), 4266, 2020 | 65 | 2020 |
| A Molybdenum Disulfide Nanozyme with Charge‐Enhanced Activity for Ultrasound‐Mediated Cascade‐Catalytic Tumor Ferroptosis L Wang, X Zhang, Z You, Z Yang, M Guo, J Guo, H Liu, X Zhang, Z Wang, ... Angewandte Chemie International Edition 62 (11), e202217448, 2023 | 64 | 2023 |
| Recent advances in low‐dimensional heterojunction‐based tunnel field effect transistors Y Lv, W Qin, C Wang, L Liao, X Liu Advanced Electronic Materials 5 (1), 1800569, 2019 | 61 | 2019 |
| Interlayer Transition Induced Infrared Response in ReS2/2D Perovskite van der Waals Heterostructure Photodetector W Su, S Zhang, C Liu, Q Tian, X Liu, K Li, Y Lv, L Liao, X Zou Nano Letters 22 (24), 10192-10199, 2022 | 59 | 2022 |
| Defect Self‐Compensation for High‐Mobility Bilayer InGaZnO/In2O3 Thin‐Film Transistor J He, G Li, Y Lv, C Wang, C Liu, J Li, D Flandre, H Chen, T Guo, L Liao Advanced Electronic Materials 5 (6), 1900125, 2019 | 52 | 2019 |
| Co-activation for enhanced K-ion storage in battery anodes Y Feng, Y Lv, H Fu, M Parekh, AM Rao, H Wang, X Tai, X Yi, Y Lin, J Zhou, ... National Science Review 10 (7), nwad118, 2023 | 51 | 2023 |
| Polarization‐Resolved Broadband MoS2/Black Phosphorus/MoS2 Optoelectronic Memory with Ultralong Retention Time and Ultrahigh Switching Ratio C Liu, X Zou, MC Wu, Y Wang, Y Lv, X Duan, S Zhang, X Liu, WW Wu, ... Advanced Functional Materials 31 (23), 2100781, 2021 | 40 | 2021 |
| A Numerical Study on Graphene Nanoribbon Heterojunction Dual-Material Gate Tunnel FET Y Lv, Q Huang, H Wang, S Chang, J He IEEE Electron Device Letters 37 (10), 1354 - 1357, 2016 | 38 | 2016 |
| Ferrocene‐Containing Nucleic Acid‐Based Energy‐Storage Nanoagent for Continuously Photo‐Induced Oxidative Stress Amplification C Ji, H Li, L Zhang, P Wang, Y Lv, Z Sun, J Tan, Q Yuan, W Tan Angewandte Chemie 134 (13), e202200237, 2022 | 34 | 2022 |
| Visible light active and noble metal free Nb4N5/TiO2 nanobelt surface heterostructure for plasmonic enhanced solar water splitting Y Ji, R Yang, L Wang, G Song, A Wang, Y Lv, M Gao, J Zhang, X Yu Chemical Engineering Journal 402, 126226, 2020 | 32 | 2020 |
| Sibling separation and psychological problems of double AIDS orphans in rural China–a comparison analysis J Gong, X Li, X Fang, G Zhao, Y Lv, J Zhao, X Lin, L Zhang, X Chen, ... Child: care, health and development 35 (4), 534-541, 2009 | 29 | 2009 |
| Energy gap tunable graphene antidot nanoribbon MOSFET: A uniform multiscale analysis from band structure to transport properties Y Lv, S Chang, H Wang, J He, Q Huang Carbon 101, 143-151, 2016 | 27 | 2016 |
| Band structure effects in extremely scaled silicon nanowire MOSFETs with different cross section shapes Y Lv, H Wang, S Chang, J He, Q Huang IEEE Transactions on Electron Devices 62 (11), 3547-3553, 2015 | 24 | 2015 |
| Facet Selectivity Guided Assembly of Nanoarchitectures onto Two‐Dimensional Metal–Organic Framework Nanosheets Z Li, H Gao, R Shen, C Zhang, L Li, Y Lv, L Tang, Y Du, Q Yuan Angewandte Chemie International Edition 60 (32), 17564-17569, 2021 | 23 | 2021 |
| Crystalline Ni-Doped Sn3O4 Nanosheets for Photocatalytic H2 Production R Yang, Y Ji, L Wang, G Song, A Wang, L Ding, N Ren, Y Lv, J Zhang, ... ACS Applied Nano Materials 3 (9), 9268-9275, 2020 | 23 | 2020 |
| Band-offset degradation in van der Waals heterojunctions Y Lv, Q Tong, Y Liu, L Li, S Chang, W Zhu, C Jiang, L Liao Physical Review Applied 12 (4), 044064, 2019 | 21 | 2019 |
| Graphene nanoribbon tunnel field-effect transistor via segmented edge saturation Y Lv, W Qin, Q Huang, S Chang, H Wang, J He IEEE Transactions on Electron Devices 64 (6), 2694-2701, 2017 | 20 | 2017 |
