| High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates Z Bryan, I Bryan, J Xie, S Mita, Z Sitar, R Collazo Applied Physics Letters 106 (14), 2015 | 171 | 2015 |
| Surface kinetics in AlN growth: A universal model for the control of surface morphology in III-nitrides I Bryan, Z Bryan, S Mita, A Rice, J Tweedie, R Collazo, Z Sitar Journal of Crystal Growth 438, 81-89, 2016 | 163 | 2016 |
| The role of surface kinetics on composition and quality of AlGaN I Bryan, Z Bryan, S Mita, A Rice, L Hussey, C Shelton, J Tweedie, ... Journal of Crystal Growth 451, 65-71, 2016 | 144 | 2016 |
| Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD I Bryan, Z Bryan, S Washiyama, P Reddy, B Gaddy, B Sarkar, ... Applied Physics Letters 112 (6), 2018 | 142 | 2018 |
| On compensation in Si-doped AlN JS Harris, JN Baker, BE Gaddy, I Bryan, Z Bryan, KJ Mirrielees, P Reddy, ... Applied Physics Letters 112 (15), 2018 | 140 | 2018 |
| Vacancy compensation and related donor-acceptor pair recombination in bulk AlN BE Gaddy, Z Bryan, I Bryan, R Kirste, J Xie, R Dalmau, B Moody, ... Applied Physics Letters 103 (16), 2013 | 112 | 2013 |
| The effect of polarity and surface states on the Fermi level at III-nitride surfaces P Reddy, I Bryan, Z Bryan, W Guo, L Hussey, R Collazo, Z Sitar Journal of Applied Physics 116 (12), 2014 | 107 | 2014 |
| KOH based selective wet chemical etching of AlN, AlxGa1− xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode W Guo, R Kirste, I Bryan, Z Bryan, L Hussey, P Reddy, J Tweedie, ... Applied Physics Letters 106 (8), 2015 | 102 | 2015 |
| The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN BE Gaddy, Z Bryan, I Bryan, J Xie, R Dalmau, B Moody, Y Kumagai, ... Applied Physics Letters 104 (20), 2014 | 92 | 2014 |
| Comparative study of etching high crystalline quality AlN and GaN W Guo, J Xie, C Akouala, S Mita, A Rice, J Tweedie, I Bryan, R Collazo, ... Journal of Crystal Growth 366, 20-25, 2013 | 90 | 2013 |
| Electronic biosensors based on III-nitride semiconductors R Kirste, N Rohrbaugh, I Bryan, Z Bryan, R Collazo, A Ivanisevic Annual Review of Analytical Chemistry 8 (1), 149-169, 2015 | 88 | 2015 |
| Polarity control and growth of lateral polarity structures in AlN R Kirste, S Mita, L Hussey, MP Hoffmann, W Guo, I Bryan, Z Bryan, ... Applied Physics Letters 102 (18), 2013 | 84 | 2013 |
| Charge neutrality levels, barrier heights, and band offsets at polar AlGaN P Reddy, I Bryan, Z Bryan, J Tweedie, S Washiyama, R Kirste, S Mita, ... Applied Physics Letters 107 (9), 2015 | 75 | 2015 |
| Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates W Guo, Z Bryan, J Xie, R Kirste, S Mita, I Bryan, L Hussey, M Bobea, ... Journal of Applied Physics 115 (10), 2014 | 71 | 2014 |
| Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN Z Bryan, I Bryan, BE Gaddy, P Reddy, L Hussey, M Bobea, W Guo, ... Applied Physics Letters 105 (22), 2014 | 68 | 2014 |
| Strain dependence on polarization properties of AlGaN and AlGaN-based ultraviolet lasers grown on AlN substrates Z Bryan, I Bryan, S Mita, J Tweedie, Z Sitar, R Collazo Applied Physics Letters 106 (23), 2015 | 67 | 2015 |
| Ge doped GaN with controllable high carrier concentration for plasmonic applications R Kirste, MP Hoffmann, E Sachet, M Bobea, Z Bryan, I Bryan, C Nenstiel, ... Applied Physics Letters 103 (24), 2013 | 66 | 2013 |
| Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control P Reddy, MP Hoffmann, F Kaess, Z Bryan, I Bryan, M Bobea, A Klump, ... Journal of Applied Physics 120 (18), 2016 | 65 | 2016 |
| HVPE-GaN grown on MOCVD-GaN/sapphire template and ammonothermal GaN seeds: Comparison of structural, optical, and electrical properties T Sochacki, Z Bryan, M Amilusik, M Bobea, M Fijalkowski, I Bryan, ... Journal of crystal growth 394, 55-60, 2014 | 61 | 2014 |
| Strain relaxation by pitting in AlN thin films deposited by metalorganic chemical vapor deposition I Bryan, A Rice, L Hussey, Z Bryan, M Bobea, S Mita, J Xie, R Kirste, ... Applied Physics Letters 102 (6), 2013 | 57 | 2013 |
