| Highly efficient photoelectrochemical water splitting using GaN-nanowire photoanode with tungsten sulfides S Han, S Noh, YT Yu, CR Lee, SK Lee, JS Kim ACS Applied Materials & Interfaces 12 (52), 58028-58037, 2020 | 25 | 2020 |
| Stretchable inorganic GaN-nanowire photosensor with high photocurrent and photoresponsivity S Han, S Noh, JW Kim, CR Lee, SK Lee, JS Kim ACS Applied Materials & Interfaces 13 (19), 22728-22737, 2021 | 23 | 2021 |
| Room-temperature operation of light-assisted NO2 gas sensor based on GaN nanowires and graphene J Shin, S Han, S Noh, YT Yu, JS Kim Nanotechnology 32 (50), 505201, 2021 | 16 | 2021 |
| Photoelectrochemical water-splitting using GaN pyramidal dots and their long-term stability in the two-electrode configuration S Han, S Noh, J Shin, YT Yu, IS Seo, JS Kim Journal of Materials Chemistry A 10 (19), 10355-10362, 2022 | 11 | 2022 |
| Photoelectrochemical water splitting using GaN nanowires with reverse-mesa structures as photoanode material S Noh, S Han, J Shin, J Lee, I Choi, HM Oh, MY Ryu, JS Kim Applied Science and Convergence Technology 31 (2), 51-55, 2022 | 10 | 2022 |
| Drastic improvement in photoelectrochemical water splitting performance over prolonged reaction time using new carrier-guiding semiconductor nanostructures S Noh, J Song, S Han, J Shin, YT Yu, JS Kim Journal of Materials Chemistry A 10 (18), 9821-9829, 2022 | 10 | 2022 |
| Improvement in the photoelectrochemical water-splitting performance using GaN nanowires with bundle structures S Han, S Noh, J Shin, YT Yu, CR Lee, JS Kim Journal of Materials Chemistry C 9 (37), 12802-12810, 2021 | 10 | 2021 |
| Manipulation of Photoelectrochemical Water Splitting by Controlling Direction of Carrier Movement Using InGaN/GaN Hetero-Structure Nanowires S Noh, J Shin, YT Yu, MY Ryu, JS Kim Nanomaterials 13 (2), 358, 2023 | 7 | 2023 |
| Formation mechanism of GaN nanowires with various shapes on Si (111) S Noh, S Han, I Choi, JS Kim, MY Ryu Journal of the Korean Physical Society 77, 247-252, 2020 | 7 | 2020 |
| Self-powered flexible piezoelectric motion sensor with spatially aligned InN nanowires J Shin, S Noh, J Lee, S Jhee, I Choi, CK Jeong, SH Kim, JS Kim Chemical Engineering Journal 486, 150205, 2024 | 4 | 2024 |
| Improvement in Photoelectrochemical Water Splitting Performance of GaN-nanowire Photoanode Using MXene S Noh, J Shin, J Lee, HM Oh, YT Yu, JS Kim ACS Applied Materials & Interfaces 16 (6), 8016-8023, 2024 | 4 | 2024 |
| Structural and Optical Properties of InN Nanowires Formed on Si (111) J Shin, S Noh, J Lee, J Oh, MY Ryu, JS Kim Applied Science and Convergence Technology 31 (6), 141-144, 2022 | 3 | 2022 |
| Flexible 1.3 μm photodetector fabricated with InN nanowires and graphene on overhead projector transparency sheet J Shin, H Yang, S Noh, S Han, JS Kim Nanoscale 14 (30), 10793-10800, 2022 | 3 | 2022 |
| Structural and electrical characteristics of ultra-thin Si-doped GaN film regrown on patterned GaN/sapphire J Shin, S Noh, J Lee, JS Kim, I Choi, HK Ahn Journal of the Korean Physical Society 82 (10), 963-969, 2023 | 1 | 2023 |
| Self-powered triboelectric sensor using GaN nanowires and stress concentration structure S Noh, J Shin, S Jhee, S Kang, Y Lee, JS Kim Nanoscale, 2025 | | 2025 |
| Fabrication of single-electrode piezoelectric motion sensor with InN nanowires J Shin, S Noh, S Jhee, MY Ryu, JS Kim Low-Dimensional Materials and Devices 2024, PC1311409, 2024 | | 2024 |
| Self-powered and flexible triboelectric sensors fabricated with III-nitride nanowires S Noh, J Lee, J Shin, S Jhee, MY Ryu, JS Kim Low-Dimensional Materials and Devices 2024, PC131140R, 2024 | | 2024 |
| Triboelectric pressure sensors fabricated with high-quality crystalline GaN nanowires grown on Si (111) S Noh, J Shin, J Lee, S Jhee, MY Ryu, JS Kim Gallium Nitride Materials and Devices XIX, PC128860I, 2024 | | 2024 |
| Stretchable photosensors with InN nanowires operating at a wavelength of 1.3 μm J Shin, S Noh, S Jhee, S Kang, Y Lee, JS Kim Nanoscale 16 (48), 22201-22208, 2024 | | 2024 |
| Fabrication and characterization of stretchable photosensor with highly crystalline InN nanowires and graphene J Shin, S Han, S Noh, MY Ryu, JS Kim Infrared Sensors, Devices, and Applications XII, PC122340G, 2022 | | 2022 |
Sangmoon HanWashington university in St. Louis在 wustl.edu 的电子邮件经过验证
