A 30-GHz CMOS SOI outphasing power amplifier with current mode combining for high backoff efficiency and constant envelope operation K Ning, Y Fang, N Hosseinzadeh, JF Buckwalter IEEE Journal of Solid-State Circuits 55 (5), 1411-1421, 2019 | 46 | 2019 |
A 130-GHz power amplifier in a 250-nm InP process with 32% PAE K Ning, Y Fang, M Rodwell, J Buckwalter 2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 1-4, 2020 | 33 | 2020 |
An 18-dBm, 57 to 85-GHz, 4-stack FET power amplifier in 45-nm SOI CMOS K Ning, JF Buckwalter 2018 IEEE/MTT-S International Microwave Symposium-IMS, 1453-1456, 2018 | 26 | 2018 |
Prospects for high-efficiency silicon and lll-V power amplifiers and transmitters in 100-300 GHz bands JF Buckwalter, MJW Rodwell, K Ning, A Ahmed, A Arias-Purdue, J Chien, ... 2021 IEEE Custom Integrated Circuits Conference (CICC), 1-7, 2021 | 24 | 2021 |
A linear microwave electro-optic front end with SiGe distributed amplifiers and segmented silicon photonic Mach–Zehnder modulator N Hosseinzadeh, A Jain, K Ning, R Helkey, JF Buckwalter IEEE Transactions on Microwave Theory and Techniques 67 (12), 5446-5458, 2019 | 16 | 2019 |
A 0.5-20 GHz RF Silicon Photonic Receiver with 120 dB•Hz2/3 SFDR using Broadband Distributed IM3 Injection Linearization N Hosseinzadeh, A Jain, K Ning, R Helkey, JF Buckwalter 2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 99-102, 2019 | 15 | 2019 |
A 28-GHz, 18-dBm, 48% PAE stacked-FET power amplifier with coupled-inductor neutralization in 45-nm SOI CMOS K Ning, JF Buckwalter 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and …, 2018 | 11 | 2018 |
A 60-GHz symmetric doherty power amplifier with 20.4% 6-dB back-off efficiency M Tanio, K Ning, JF Buckwalter 2019 49th European Microwave Conference (EuMC), 559-562, 2019 | 8 | 2019 |
A 1 to 20 GHz silicon-germanium low-noise distributed driver for RF silicon photonic Mach-Zehnder modulators N Hosseinzadeh, A Jain, K Ning, R Helkey, JF Buckwalter 2019 IEEE MTT-S International Microwave Symposium (IMS), 774-777, 2019 | 8 | 2019 |
A 2-stage, 140-GHz class-B power amplifier achieving 22.5% PAE at 17.3 dBm in a 250-nm InP HBT technology E Lam, K Ning, A Ahmed, M Rodwell, J Buckwalter 2022 IEEE/MTT-S International Microwave Symposium-IMS 2022, 448-451, 2022 | 6 | 2022 |
A Multi-stage 19.2-dBm, 30.4%-PAE D-band Power Amplifier in a 250-nm InP HBT Process E Lam, K Ning, ASH Ahmed, M Rodwell, JF Buckwalter 2023 IEEE/MTT-S International Microwave Symposium-IMS 2023, 1042-1045, 2023 | 4 | 2023 |
Fundamental Limits of High-Efficiency Silicon and Compound Semiconductor Power Amplifiers in 100—300 GHz Bands JF Buckwalter, MJW Rodwell, K Ning, A Ahmed, A Arias-Purdue, J Chien, ... ITU Journal on Future and Evolving Technologies 2 (7), 39-50, 2021 | 4 | 2021 |
Wideband vector modulator phase shifter K Ning, H Krishnaswamy, A Natarajan US Patent 11,627,024, 2023 | 2 | 2023 |
A 120-mW, Q-band InP HBT power amplifier with 46% peak PAE A Arias-Purdue, P Rowell, M Urteaga, K Shinohara, A Carter, J Bergman, ... 2020 IEEE/MTT-S International Microwave Symposium (IMS), 1291-1294, 2020 | 2 | 2020 |
Methods and apparatus for supporting linearization on power combined power amplifiers K Ning, H Krishnaswamy US Patent App. 17/509,925, 2022 | 1 | 2022 |
High efficiency mm-wave power amplifier design methodology K Ning University of California, Santa Barbara, 2020 | 1 | 2020 |
Power amplifier JF Buckwalter, K Ning US Patent 11,652,447, 2023 | | 2023 |