| The effect of grain size on the sensitivity of nanocrystalline metal-oxide gas sensors A Rothschild, Y Komem Journal of Applied Physics 95 (11), 6374-6380, 2004 | 677 | 2004 |
| Electron microscope studies of grain boundary dislocation behavior RW Balluffi, Y Komem, T Schober Surface Science 31, 68-103, 1972 | 267 | 1972 |
| Sensing behavior of TiO2 thin films exposed to air at low temperatures A Rothschild, F Edelman, Y Komem, F Cosandey Sensors and Actuators B: Chemical 67 (3), 282-289, 2000 | 194 | 2000 |
| Interfacial reactions between Ni films and GaAs A Lahav, M Eizenberg, Y Komem Journal of applied physics 60 (3), 991-1001, 1986 | 146 | 1986 |
| Surface photovoltage spectroscopy study of reduced and oxidized nanocrystalline TiO2 films A Rothschild, A Levakov, Y Shapira, N Ashkenasy, Y Komem Surface science 532, 456-460, 2003 | 102 | 2003 |
| Numerical computation of chemisorption isotherms for device modeling of semiconductor gas sensors A Rothschild, Y Komem Sensors and Actuators B: Chemical 93 (1-3), 362-369, 2003 | 101 | 2003 |
| Electronic and transport properties of reduced and oxidized nanocrystalline films A Rothschild, Y Komem, A Levakov, N Ashkenasy, Y Shapira Applied physics letters 82 (4), 574-576, 2003 | 92 | 2003 |
| Experimental study of the minority-carrier transport at the polysilicon—monosilicon interface A Neugroschel, M Arienzo, Y Komem, RD Isaac IEEE transactions on electron devices 32 (4), 807-816, 1985 | 78 | 1985 |
| Stress relaxation in thin aluminium films M Hershkovitz, IA Blech, Y Komem Thin solid films 130 (1-2), 87-93, 1985 | 77 | 1985 |
| The threshold current density and incubation time to electromigration in gold films E Kinsbron, IA Blech, Y Komem Thin Solid Films 46 (2), 139-150, 1977 | 73 | 1977 |
| Quantitative evaluation of chemisorption processes on semiconductors A Rothschild, Y Komem, N Ashkenasy Journal of applied physics 92 (12), 7090-7097, 2002 | 70 | 2002 |
| On the relationship between the grain size and gas-sensitivity of chemo-resistive metal-oxide gas sensors with nanosized grains A Rothschild, Y Komem Journal of electroceramics 13, 697-701, 2004 | 69 | 2004 |
| Initial crystallization stage of amorphous germanium films F Edelman, Y Komem, M Bendayan, R Beserman Journal of applied physics 72 (11), 5153-5157, 1992 | 64 | 1992 |
| Diffusion of arsenic in bilayer polycrystalline silicon films M Arienzo, Y Komem, AE Michel Journal of applied physics 55 (2), 365-369, 1984 | 62 | 1984 |
| Shock induced hardness in α-iron E Ganin, Y Komem, A Rosen Materials Science and Engineering 33 (1), 1-4, 1978 | 45 | 1978 |
| Tunable gas sensing properties of p-and n-doped ZnO thin films V Kobrinsky, E Fradkin, V Lumelsky, A Rothschild, Y Komem, Y Lifshitz Sensors and Actuators B: Chemical 148 (2), 379-387, 2010 | 44 | 2010 |
| Explosive cladding of Cu/Cu systems: An electron microscopy study and a thermomechanical model Y Dor-Ram, BZ Weiss, Y Komem Acta Metallurgica 27 (9), 1417-1429, 1979 | 41 | 1979 |
| Improved performance of SnO2 thin-film gas sensors due to gold diffusion GN Advani, Y Komem, J Hasenkopf, AG Jordan Sensors and Actuators 2, 139-147, 1981 | 39 | 1981 |
| Study of conductive gold film lifetime under high current densities M Etzion, IA Blech, Y Komem Journal of Applied Physics 46 (4), 1455-1458, 1975 | 36 | 1975 |
| Precipitation at coherency loss in Cu-0.35 wt pct Cr Y Komem, J Rezek Metallurgical Transactions A 6, 549-551, 1975 | 36 | 1975 |
Avner RothschildProfessor of Materials Science and Engineering, Technion - Israel Institute of Technology在 technion.ac.il 的电子邮件经过验证
