Vertically self-organized InAs quantum box islands on GaAs (100) Q Xie, A Madhukar, P Chen, NP Kobayashi Physical review letters 75 (13), 2542, 1995 | 1733 | 1995 |
“Nanoparticle-in-Alloy” approach to efficient thermoelectrics: silicides in SiGe N Mingo, D Hauser, NP Kobayashi, M Plissonnier, A Shakouri Nano letters 9 (2), 711-715, 2009 | 506 | 2009 |
Ultrasmooth silver thin films deposited with a germanium nucleation layer VJ Logeeswaran, NP Kobayashi, MS Islam, W Wu, P Chaturvedi, ... Nano letters 9 (1), 178-182, 2009 | 402 | 2009 |
Critical diameter for III-V nanowires grown on lattice-mismatched substrates LC Chuang, M Moewe, C Chase, NP Kobayashi, C Chang-Hasnain, ... Applied physics letters 90 (4), 2007 | 327 | 2007 |
In situ, atomic force microscope studies of the evolution of InAs three‐dimensional islands on GaAs(001) NP Kobayashi, TR Ramachandran, P Chen, A Madhukar Applied physics letters 68 (23), 3299-3301, 1996 | 292 | 1996 |
Electrical Performance and Scalability of Pt Dispersed SiO2 Nanometallic Resistance Switch BJ Choi, AC Torrezan, KJ Norris, F Miao, JP Strachan, MX Zhang, ... Nano letters 13 (7), 3213-3217, 2013 | 221 | 2013 |
A perspective on nanowire photodetectors: current status, future challenges, and opportunities VJ Logeeswaran, J Oh, AP Nayak, AM Katzenmeyer, KH Gilchrist, ... IEEE Journal of selected topics in quantum electronics 17 (4), 1002-1032, 2011 | 187 | 2011 |
GaN growth on Si (111) substrate using oxidized AlAs as an intermediate layer NP Kobayashi, JT Kobayashi, PD Dapkus, WJ Choi, AE Bond, X Zhang, ... Applied physics letters 71 (24), 3569-3571, 1997 | 107 | 1997 |
Nitride memristors BJ Choi, JJ Yang, MX Zhang, KJ Norris, DAA Ohlberg, NP Kobayashi, ... Applied Physics A 109, 1-4, 2012 | 81 | 2012 |
Dopant control by atomic layer deposition in oxide films for memristive switches JJ Yang, NP Kobayashi, JP Strachan, MX Zhang, DAA Ohlberg, ... Chemistry of Materials 23 (2), 123-125, 2011 | 77 | 2011 |
A 14-ps full width at half maximum high-speed photoconductor fabricated with intersecting InP nanowires on an amorphous surface VJ Logeeswaran, A Sarkar, MS Islam, NP Kobayashi, J Straznicky, X Li, ... Applied Physics A 91, 1-5, 2008 | 73 | 2008 |
Strained coherent InAs quantum box islands on GaAs (100): Size equalization, vertical self‐organization, and optical properties Q Xie, NP Kobayashi, TR Ramachandran, A Kalburge, P Chen, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1996 | 73 | 1996 |
Atomic layer deposition of aluminum oxide on hydrophobic and hydrophilic surfaces NP Kobayashi, CL Donley, SY Wang, RS Williams Journal of Crystal Growth 299 (1), 218-222, 2007 | 64 | 2007 |
Carrier relaxation and recombination in an InGaN/GaN quantum well probed with time-resolved cathodoluminescence X Zhang, DH Rich, JT Kobayashi, NP Kobayashi, PD Dapkus Applied physics letters 73 (10), 1430-1432, 1998 | 61 | 1998 |
Epitaxial lateral overgrowth of GaN over surface formed on Si substrate NP Kobayashi, JT Kobayashi, X Zhang, PD Dapkus, DH Rich Applied physics letters 74 (19), 2836-2838, 1999 | 57 | 1999 |
Nanowire-based opto-electronic device SY Wang, MS Islam, PJ Kuekes, N Kobayashi US Patent 8,212,235, 2012 | 51 | 2012 |
Methods of making nano-scale structures having controlled size, nanowire structures and methods of making the nanowire structures N Kobayashi, W Wu, DR Stewart, S Sharma, SY Wang, RS Williams US Patent 7,906,778, 2011 | 51 | 2011 |
Nanowire-based photovoltaic cells and methods for fabricating the same SY Wang, M Tan, N Kobayashi, D Houng US Patent App. 12/243,740, 2009 | 48 | 2009 |
Photovoltaic Structure And Method Of Fabication Employing Nanowire In Stub SV Mathai, NP Kobayashi, SY Wang US Patent App. 13/133,513, 2011 | 47 | 2011 |
Growth and characterization of indium phosphide single-crystal nanoneedles on microcrystalline silicon surfaces NP Kobayashi, SY Wang, C Santori, RS Williams Applied Physics A 85, 1-6, 2006 | 45 | 2006 |