| Optical and magnetic properties of Eu-doped GaN J Hite, GT Thaler, R Khanna, CR Abernathy, SJ Pearton, JH Park, ... Applied physics letters 89 (13), 2006 | 98 | 2006 |
| Annealing of dry etch damage in metallized and bare (-201) Ga2O3 J Yang, F Ren, R Khanna, K Bevlin, D Geerpuram, LC Tung, J Lin, ... Journal of Vacuum Science & Technology B 35 (5), 2017 | 76 | 2017 |
| Inductively coupled plasma etch damage in (-201) Ga2O3 Schottky diodes J Yang, S Ahn, F Ren, R Khanna, K Bevlin, D Geerpuram, SJ Pearton, ... Applied Physics Letters 110 (14), 2017 | 70 | 2017 |
| Inductively coupled plasma etching of bulk, single-crystal Ga2O3 J Yang, S Ahn, F Ren, S Pearton, R Khanna, K Bevlin, D Geerpuram, ... Journal of Vacuum Science & Technology B 35 (3), 2017 | 54 | 2017 |
| High dose Co-60 gamma irradiation of InGaN quantum well light-emitting diodes R Khanna, SY Han, SJ Pearton, D Schoenfeld, WV Schoenfeld, F Ren Applied Physics Letters 87 (21), 2005 | 41 | 2005 |
| Effects of high-dose 40MeV proton irradiation on the electroluminescent and electrical performance of InGaN light-emitting diodes R Khanna, KK Allums, CR Abernathy, SJ Pearton, J Kim, F Ren, ... Applied physics letters 85 (15), 3131-3133, 2004 | 40 | 2004 |
| Thermal degradation of electrical properties and morphology of bulk single-crystal ZnO surfaces R Khanna, K Ip, YW Heo, DP Norton, SJ Pearton, F Ren Applied physics letters 85 (16), 3468-3470, 2004 | 37 | 2004 |
| Comparison of CH4/H2 and C2H6/H2 inductively coupled plasma etching of ZnO W Lim, L Voss, R Khanna, BP Gila, DP Norton, SJ Pearton, F Ren Applied Surface Science 253 (3), 1269-1273, 2006 | 31 | 2006 |
| W2B-based rectifying contacts to n-GaN R Khanna, SJ Pearton, F Ren, I Kravchenko, CJ Kao, GC Chi Applied Physics Letters 87 (5), 2005 | 26 | 2005 |
| Ohmic contacts to p-type GaN based on TaN, TiN, and ZrN LF Voss, L Stafford, R Khanna, BP Gila, CR Abernathy, SJ Pearton, F Ren, ... Applied physics letters 90 (21), 2007 | 24 | 2007 |
| Dry etching of bulk single-crystal ZnO in CH4/H2-based plasma chemistries W Lim, L Voss, R Khanna, BP Gila, DP Norton, SJ Pearton, F Ren Applied Surface Science 253 (2), 889-894, 2006 | 23 | 2006 |
| Proton irradiation of ZnO schottky diodes R Khanna, K Ip, KK Allums, K Baik, CR Abernathy, SJ Pearton, YW Heo, ... Journal of electronic materials 34, 395-398, 2005 | 22 | 2005 |
| Effect of cryogenic temperature deposition on Au contacts to bulk, single-crystal n-type ZnO JS Wright, R Khanna, LF Voss, L Stafford, BP Gila, DP Norton, SJ Pearton, ... Applied surface science 253 (8), 3766-3772, 2007 | 21 | 2007 |
| Stability of Ti/Al/ZrB2/Ti/Au ohmic contacts on n-GaN R Khanna, SJ Pearton, F Ren, II Kravchenko Applied Surface Science 253 (4), 2340-2344, 2006 | 21 | 2006 |
| Improved thermally stable ohmic contacts on p-GaN based on W2B L Voss, R Khanna, SJ Pearton, F Ren, I Kravchenko Applied physics letters 88 (1), 2006 | 21 | 2006 |
| Use of TiB2 diffusion barriers for Ni/Au ohmic contacts on p-GaN L Voss, R Khanna, SJ Pearton, F Ren, II Kravchenko Applied surface science 253 (3), 1255-1259, 2006 | 17 | 2006 |
| Comparison of electrical and reliability performances of TiB2-, CrB2-, and W2B5-based Ohmic contacts on n-GaN R Khanna, SJ Pearton, F Ren, II Kravchenko Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2006 | 17 | 2006 |
| ZrB2 Schottky diode contacts on n-GaN R Khanna, K Ramani, V Cracium, R Singh, SJ Pearton, F Ren, ... Applied Surface Science 253 (4), 2315-2319, 2006 | 16 | 2006 |
| Properties and annealing stability of Fe doped semi‐insulating GaN structures AY Polyakov, NB Smirnov, AV Govorkov, AA Shlensky, K McGuire, ... physica status solidi (c) 2 (7), 2476-2479, 2005 | 15 | 2005 |
| Thermal stability of Ohmic contacts to InN R Khanna, BP Gila, L Stafford, SJ Pearton, F Ren, II Kravchenko, ... Applied physics letters 90 (16), 2007 | 12 | 2007 |
Stephen PeartonProfessor of Materials Science and Engineering, University of Florida在 mse.ufl.edu 的电子邮件经过验证
