Phase separation in InGaN grown by metalorganic chemical vapor deposition NA El-Masry, EL Piner, SX Liu, SM Bedair Applied physics letters 72 (1), 40-42, 1998 | 395 | 1998 |
12 W/mm AlGaN-GaN HFETs on silicon substrates JW Johnson, EL Piner, A Vescan, R Therrien, P Rajagopal, JC Roberts, ... IEEE Electron Device Letters 25 (7), 459-461, 2004 | 310 | 2004 |
Gallium nitride materials and methods W Weeks, E Piner, T Gehrke, K Linthicum US Patent 6,617,060, 2003 | 286 | 2003 |
Effect of gate leakage in the subthreshold characteristics of AlGaN/GaN HEMTs JW Chung, JC Roberts, EL Piner, T Palacios IEEE Electron Device Letters 29 (11), 1196-1198, 2008 | 228 | 2008 |
Gallium nitride material devices and methods including backside vias TW Weeks, EL Piner, RM Borges, KJ Linthicum US Patent 6,611,002, 2003 | 212 | 2003 |
Gallium nitride materials and methods TW Weeks Jr, EL Piner, T Gehrke, KJ Linthicum US Patent 6,649,287, 2003 | 203 | 2003 |
Effect of hydrogen on the indium incorporation in InGaN epitaxial films EL Piner, MK Behbehani, NA El-Masry, FG McIntosh, JC Roberts, ... Applied physics letters 70 (4), 461-463, 1997 | 191 | 1997 |
Enzymatic glucose detection using ZnO nanorods on the gate region of high electron mobility transistors BS Kang, HT Wang, F Ren, SJ Pearton, TE Morey, DM Dennis, ... Applied Physics Letters 91 (25), 252103, 2007 | 177 | 2007 |
Pressure-induced changes in the conductivity of high-electron mobility-transistor membranes BS Kang, S Kim, F Ren, JW Johnson, RJ Therrien, P Rajagopal, ... Applied Physics Letters 85 (14), 2962-2964, 2004 | 163 | 2004 |
AlGaN/GaN HFETs fabricated on 100-mm GaN on silicon (111) substrates JD Brown, R Borges, E Piner, A Vescan, S Singhal, R Therrien Solid-State Electronics 46 (10), 1535-1539, 2002 | 162 | 2002 |
Prostate specific antigen detection using high electron mobility transistors BS Kang, HT Wang, TP Lele, Y Tseng, F Ren, SJ Pearton, JW Johnson, ... Applied physics letters 91 (11), 112106, 2007 | 149 | 2007 |
Electrical detection of deoxyribonucleic acid hybridization with high electron mobility transistors BS Kang, SJ Pearton, JJ Chen, F Ren, JW Johnson, RJ Therrien, ... Applied physics letters 89 (12), 122102, 2006 | 143 | 2006 |
Phase separation and ordering coexisting in grown by metal organic chemical vapor deposition MK Behbehani, EL Piner, SX Liu, NA El-Masry, SM Bedair Applied physics letters 75 (15), 2202-2204, 1999 | 142 | 1999 |
DC, RF, and microwave noise performance of AlGaN-GaN field effect transistors dependence of aluminum concentration W Lu, V Kumar, EL Piner, I Adesida IEEE Transactions on Electron Devices 50 (4), 1069-1074, 2003 | 130 | 2003 |
Growth and characterization of AlInGaN quaternary alloys FG McIntosh, KS Boutros, JC Roberts, SM Bedair, EL Piner, NA El‐Masry Applied physics letters 68 (1), 40-42, 1996 | 128 | 1996 |
Reliability of large periphery GaN-on-Si HFETs S Singhal, T Li, A Chaudhari, AW Hanson, R Therrien, JW Johnson, ... Microelectronics Reliability 46 (8), 1247-1253, 2006 | 125 | 2006 |
Low Thermal Boundary Resistance Interfaces for GaN-on-Diamond Devices L Yates, J Anderson, X Gu, C Lee, T Bai, M Mecklenburg, T Aoki, ... ACS applied materials & interfaces 10 (28), 24302-24309, 2018 | 124 | 2018 |
Seamless on-wafer integration of Si (100) MOSFETs and GaN HEMTs JW Chung, J Lee, EL Piner, T Palacios IEEE Electron Device Letters 30 (10), 1015-1017, 2009 | 114 | 2009 |
Semiconductor device-based sensors JW Johnson, EL Piner, KJ Linthicum US Patent 7,361,946, 2008 | 109 | 2008 |
Fast electrical detection of Hg(II) ions with high electron mobility transistors HT Wang, BS Kang, TF Chancellor Jr, TP Lele, Y Tseng, F Ren, ... Applied Physics Letters 91 (4), 042114, 2007 | 108 | 2007 |