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Youngmin Kim
Youngmin Kim
在 hongik.ac.kr 的电子邮件经过验证 - 首页
标题
引用次数
引用次数
年份
Micromachined Fabry-Perot cavity pressure transducer
Y Kim, DP Neikirk
IEEE Photonics Technology Letters 7 (12), 1471-1473, 1995
1781995
Additional n-type LDD/pocket implant for improving short-channel NMOS ESD robustness
M Nandakumar, S Zhao, Y Kim
US Patent 6,822,297, 2004
1372004
Design for manufacture of micromachined fabry—pérot cavity-based sensors
Y Kim, DP Neikirk
Sensors and Actuators A: Physical 50 (1-2), 141-146, 1995
471995
Buried channel PMOS transistor in dual gate CMOS with reduced masking steps
Y Kim, A Chatterjee
US Patent 6,514,810, 2003
342003
Method to increase substrate potential in MOS transistors used in ESD protection circuits
C Salling, A Chatterjee, Y Kim
US Patent App. 09/975,107, 2003
252003
Tunable sidewall spacer process for CMOS integrated circuits
Y Kim, ST Walsh
US Patent 6,908,800, 2005
242005
Stacked poly/amorphous silicon gate giving low sheet resistance silicide film at submicron linewidths
Y Kim, ST Walsh, J Mavoori
US Patent 6,107,147, 2000
222000
Tunable sidewall spacer process for CMOS integrated circuits
Y Kim, S Walsh
US Patent App. 11/084,473, 2005
202005
Transistors having selectively doped channel regions
Y Kim, A Chatterjee
US Patent 6,730,555, 2004
202004
Intrinsic capacitance characteristics of top-contact organic thin-film transistors
K Kim, Y Kim
IEEE transactions on electron devices 57 (9), 2344-2347, 2010
192010
Degraded off-State Current of Organic Thin-Film Transistor and Annealing Effect
S Hong, J Choi, Y Kim
IEEE Transactions on Electron Devices 55 (12), 3602-3604, 2008
172008
Compact self-powered wireless sensors for real-time monitoring of power lines
T Lim, Y Kim
Journal of Electrical Engineering & Technology 14 (3), 1321-1326, 2019
142019
Pentacene TFT with Reduced Threshold Voltage Using PMMA-co-MAA/Sol-Gel-Derived TiO2 Composite Insulator
J Park, BJ Park, HJ Choi, Y Kim, JS Choi
IEEE Electron Dev. Lett 30, 1146-1148, 2009
142009
Copper hillock induced copper diffusion and corrosion behavior in a dual damascene process
S Kim, C Shim, J Hong, H Lee, J Han, K Kim, Y Kim
Electrochemical and solid-state letters 10 (6), H193-H195, 2007
122007
High performance PNP bipolar device fully compatible with CMOS process
Y Kim, S Tang, S Sridhar, A Chatterjee
US Patent 6,794,730, 2004
122004
Micromachined Fabry-Perot cavity pressure transducer with optical fiber interconnects
Y Kim, DP Neikirk
Micromachined Devices and Components 2642, 242-250, 1995
121995
Trench isolation step-induced (TRISI) narrow width effect on MOSFET
Y Kim, S Sridhar, A Chatterjee
IEEE Electron device letters 23 (10), 600-602, 2002
112002
Smart mechanical bearings using MEMS technology
C Hearn, W Maddox, Y Kim, V Gupta, D Masser, P Koeneman, CS Chu, ...
Proceedings of the Energy-Sources Technology Conference and Exhibition, 1995
111995
Low-voltage atmospheric-plasma generation by utilizing afterglow initiation carrier
L Lee, Y Kim
IEEE Transactions on Plasma Science 41 (1), 155-158, 2012
92012
Gate workfunction optimization of a 32 nm metal gate MOSFET for low power applications
YH Oh, YM Kim
Journal of Electrical Engineering and Technology 1 (2), 237-240, 2006
82006
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