| A Resistive Memory in Semiconducting BiFeO3 Thin‐Film Capacitors AQ Jiang, C Wang, KJ Jin, XB Liu, JF Scott, CS Hwang, TA Tang, HB Lu, ... Advanced Materials 23 (10), 1277-1281, 2011 | 462 | 2011 |
| Switchable diode effect and ferroelectric resistive switching in epitaxial BiFeO3 thin films C Wang, K Jin, Z Xu, L Wang, C Ge, H Lu, H Guo, M He, G Yang Applied Physics Letters 98 (19), 2011 | 394 | 2011 |
| Ultrahigh energy storage in superparaelectric relaxor ferroelectrics H Pan, S Lan, S Xu, Q Zhang, H Yao, Y Liu, F Meng, EJ Guo, L Gu, D Yi, ... Science 374 (6563), 100-104, 2021 | 378 | 2021 |
| Artificial synapses emulated by an electrolyte‐gated tungsten‐oxide transistor JT Yang, C Ge, JY Du, HY Huang, M He, C Wang, HB Lu, GZ Yang, KJ Jin Advanced Materials 30 (34), 1801548, 2018 | 355 | 2018 |
| Low-threshold topological nanolasers based on the second-order corner state W Zhang, X Xie, H Hao, J Dang, S Xiao, S Shi, H Ni, Z Niu, C Wang, K Jin, ... Light: Science & Applications 9 (1), 109, 2020 | 250 | 2020 |
| Reproducible ultrathin ferroelectric domain switching for high‐performance neuromorphic computing J Li, C Ge, J Du, C Wang, G Yang, K Jin Advanced Materials 32 (7), 1905764, 2020 | 187 | 2020 |
| Positive colossal magnetoresistance from interface effect in junction of and K Jin, H Lu, Q Zhou, K Zhao, B Cheng, Z Chen, Y Zhou, GZ Yang Physical Review B—Condensed Matter and Materials Physics 71 (18), 184428, 2005 | 182 | 2005 |
| Photo-induced non-volatile VO2 phase transition for neuromorphic ultraviolet sensors G Li, D Xie, H Zhong, Z Zhang, X Fu, Q Zhou, Q Li, H Ni, J Wang, E Guo, ... Nature communications 13 (1), 1729, 2022 | 175 | 2022 |
| Evidence for a Crucial Role Played by Oxygen Vacancies in LaMnO3 Resistive Switching Memories Z Xu, K Jin, L Gu, Y Jin, C Ge, C Wang, H Guo, H Lu, R Zhao, G Yang small 8 (8), 1279-1284, 2012 | 168 | 2012 |
| A ferrite synaptic transistor with topotactic transformation C Ge, C Liu, Q Zhou, Q Zhang, J Du, J Li, C Wang, L Gu, G Yang, K Jin Advanced Materials 31 (19), 1900379, 2019 | 152 | 2019 |
| Interfacial oxygen vacancies as a potential cause of hysteresis in perovskite solar cells F Zhang, W Ma, H Guo, Y Zhao, X Shan, K Jin, H Tian, Q Zhao, D Yu, X Lu, ... Chemistry of Materials 28 (3), 802-812, 2016 | 145 | 2016 |
| Electrolyte‐gated synaptic transistor with oxygen ions HY Huang, C Ge, QH Zhang, CX Liu, JY Du, JK Li, C Wang, L Gu, ... Advanced Functional Materials 29 (29), 1902702, 2019 | 124 | 2019 |
| Effects of interfacial polarization on the dielectric properties of BiFeO3 thin film capacitors GZ Liu, C Wang, CC Wang, J Qiu, M He, J Xing, KJ Jin, HB Lu, GZ Yang Applied Physics Letters 92 (12), 2008 | 124 | 2008 |
| Dember effect induced photovoltage in perovskite pn heterojunctions KJ Jin, K Zhao, HB Lu, L Liao, GZ Yang Applied Physics Letters 91 (8), 2007 | 116 | 2007 |
| Oxygen vacancy induced room-temperature metal–insulator transition in nickelate films and its potential application in photovoltaics L Wang, S Dash, L Chang, L You, Y Feng, X He, K Jin, Y Zhou, HG Ong, ... ACS applied materials & interfaces 8 (15), 9769-9776, 2016 | 115 | 2016 |
| High sensitivity of positive magnetoresistance in low magnetic field in perovskite oxide p–n junctions HB Lu, SY Dai, ZH Chen, YL Zhou, BL Cheng, KJ Jin, LF Liu, GZ Yang, ... Applied Physics Letters 86 (3), 2005 | 115 | 2005 |
| Picosecond photoelectric characteristic in La0. 7Sr0. 3MnO3∕ Si pn junctions HB Lu, KJ Jin, YH Huang, M He, K Zhao, BL Cheng, ZH Chen, YL Zhou, ... Applied Physics Letters 86 (24), 2005 | 113 | 2005 |
| Positive colossal magnetoresistance in a multilayer p–n heterostructure of Sr-doped LaMnO3 and Nb-doped SrTiO3 HB Lu, GZ Yang, ZH Chen, SY Dai, YL Zhou, KJ Jin, BL Cheng, M He, ... Applied physics letters 84 (24), 5007-5009, 2004 | 106 | 2004 |
| Pressure-induced monotonic enhancement of Tc to over 30 K in superconducting Pr0.82Sr0.18NiO2 thin films NN Wang, MW Yang, Z Yang, KY Chen, H Zhang, QH Zhang, ZH Zhu, ... Nature communications 13 (1), 4367, 2022 | 105 | 2022 |
| Transient lateral photovoltaic effect in pn heterojunctions of La0. 7Sr0. 3MnO3 and Si K Zhao, K Jin, H Lu, Y Huang, Q Zhou, M He, Z Chen, Y Zhou, G Yang Applied Physics Letters 88 (14), 2006 | 105 | 2006 |
