| A 20nm 1.8V 8Gb PRAM with 40MB/s program bandwidth Y Choi, I Song, MH Park, H Chung, S Chang, B Cho, J Kim, Y Oh, D Kwon, ... Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2012 …, 2012 | 478 | 2012 |
| A Perspective on Terahertz Next-Generation Wireless Communications J O'Hara, S Ekin, W Choi, I Song Technologies 7 (2), 43, 2019 | 132 | 2019 |
| A 58nm 1.8V 1Gb PRAM with 6.4 MB/s program BW H Chung, BH Jeong, BJ Min, Y Choi, BH Cho, J Shin, J Kim, J Sunwoo, ... Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2011 …, 2011 | 109 | 2011 |
| Design and Analysis of a Low Loss, Wideband Digital Step Attenuator With Minimized Amplitude and Phase Variations I Song, MK Cho, J Cressler IEEE Journal of Solid-State Circuits 53 (8), 2202-2213, 2018 | 70 | 2018 |
| A simple figure of merit of RF MOSFET for low-noise amplifier design I Song, J Jeon, HS Jhon, J Kim, BG Park, JD Lee, H Shin IEEE Electron Device Letters 29 (12), 1380-1382, 2008 | 64 | 2008 |
| A True Time Delay-based SiGe Bi-directional T/R Chipset for Large-Scale Wideband Timed Array Antennas MK Cho, I Song, JD Cressler 2018 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 272-275, 2018 | 42 | 2018 |
| Design of radiation-hardened RF low-noise amplifiers using inverse-mode SiGe HBTs I Song, S Jung, NE Lourenco, US Raghunathan, ZE Fleetwood, ... IEEE Transactions on Nuclear Science 61 (6), 3218-3225, 2014 | 39 | 2014 |
| Self-Heating and Electrothermal Properties of Advanced Sub-5-nm node Nanoplate FET I Myeong, I Song, MJ Kang, H Shin IEEE Electron Device Letters 41 (7), 977-980, 2020 | 37 | 2020 |
| 8mW 17/24 GHz dual-band CMOS low-noise amplifier for ISM-band application HS Jhon, I Song, J Jeon, H Jung, M Koo, BG Park, JD Lee, H Shin Electronics Letters 44 (23), 1353-1354, 2008 | 35 | 2008 |
| Accurate extraction of effective channel length and source/drain series resistance in ultrashort-channel MOSFETs by iteration method J Kim, J Lee, I Song, Y Yun, JD Lee, BG Park, H Shin IEEE Transactions on Electron Devices 55 (10), 2779-2784, 2008 | 30 | 2008 |
| Evaluation of Enhanced Low Dose Rate Sensitivity in Fourth-Generation SiGe HBTs ZE Fleetwood, AS Cardoso, I Song, E Wilcox, NE Lourenco, SD Phillips, ... IEEE Transactions on Nuclear Science 61 (6), 2915-2922, 2014 | 26 | 2014 |
| A Compact, Wideband Lumped-Element Wilkinson Power Divider/Combiner Using Symmetric Inductors with Embedded Capacitors I Ju, MK Cho, I Song, JD Cressler IEEE Microwave and Wireless Components Letters 26 (8), 595-597, 2016 | 25 | 2016 |
| fmax Improvement by Controlling Extrinsic Parasitics in Circuit-Level MOS Transistor HS Jhon, JH Lee, J Lee, B Oh, I Song, Y Yun, BG Park, JD Lee, H Shin IEEE Electron Device Letters 30 (12), 1323-1325, 2009 | 25 | 2009 |
| A SiGe-BiCMOS Wideband Active Bidirectional Digital Step Attenuator With Bandwidth Tuning and Equalization MK Cho, I Song, Z Fleetwood, J Cressler IEEE Transactions on Microwave Theory and Techniques 66 (8), 3866-3876, 2018 | 21 | 2018 |
| An Active Bi-Directional SiGe DPDT Switch With Multi-Octave Bandwidth MK Cho, I Song, JG Kim, JD Cressler IEEE Microwave and Wireless Components Letters 26 (4), 279-281, 2016 | 21 | 2016 |
| An Investigation of Single-Event Effect Modeling Techniques for a SiGe RF Low-Noise Amplifier NE Lourenco, S Zeinolabedinzadeh, A Ildefonso, ZE Fleetwood, CT Coen, ... IEEE Transactions on Nuclear Science 63 (1), 273-280, 2016 | 21 | 2016 |
| An investigation of single-event transients in C-SiGe HBT on SOI current mirror circuits S Jung, NE Lourenco, I Song, MA Oakley, TD England, R Arora, ... IEEE Transactions on Nuclear Science 61 (6), 3193-3200, 2014 | 20 | 2014 |
| Optimization of cascode configuration in CMOS low‐noise amplifier I Song, M Koo, H Jung, HS Jhon, H Shin Microwave and Optical Technology Letters 50 (3), 646-649, 2008 | 20 | 2008 |
| A SiGe-BiCMOS Wideband (2–22 GHz) Active Power Divider/Combiner Circuit Supporting Bidirectional Operation I Song, MK Cho, JG Kim, JD Cressler IEEE Transactions on Microwave Theory and Techniques 64 (12), 4676-4684, 2016 | 18 | 2016 |
| A 34–110 GHz wideband, asymmetric, broadside-coupled Marchand balun in 180 nm SiGe BiCMOS technology I Song, RL Schmid, DC Howard, S Jung, JD Cressler 2014 IEEE MTT-S International Microwave Symposium (IMS2014), 1-4, 2014 | 18 | 2014 |
John D. CresslerRegents Professor, School of Electrical and Computer Engineering Georgia Tech在 ece.gatech.edu 的电子邮件经过验证
