| Selective area regrowth and doping for vertical gallium nitride power devices: Materials challenges and recent progress H Fu, K Fu, C Yang, H Liu, KA Hatch, P Peri, DH Mudiyanselage, B Li, ... Materials Today 49, 296-323, 2021 | 26 | 2021 |
| The impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices K Fu, H Fu, X Deng, PY Su, H Liu, K Hatch, CY Cheng, D Messina, ... Applied Physics Letters 118 (22), 2021 | 20 | 2021 |
| AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MISHEMTs) using plasma deposited BN as gate dielectric TH Yang, J Brown, K Fu, J Zhou, K Hatch, C Yang, J Montes, X Qi, H Fu, ... Applied Physics Letters 118 (7), 2021 | 17 | 2021 |
| Synthesis and characterization of a photocleavable collagen-like peptide A Ornelas, KN Williams, KA Hatch, A Paez, AC Aguilar, CC Ellis, ... Organic & biomolecular chemistry 16 (6), 1000-1013, 2018 | 11 | 2018 |
| Photolysis of a peptide with N-peptidyl-7-nitroindoline units using two-photon absorption KA Hatch, A Ornelas, KN Williams, T Boland, K Michael, C Li Biomedical optics express 7 (11), 4654-4659, 2016 | 11 | 2016 |
| Plasma enhanced atomic layer deposition and atomic layer etching of gallium oxide using trimethylgallium KA Hatch, DC Messina, RJ Nemanich Journal of Vacuum Science & Technology A 40 (4), 2022 | 7 | 2022 |
| GaN-based threshold switching behaviors at high temperatures enabled by interface engineering for harsh environment memory applications K Fu, S Luo, H Fu, K Hatch, SR Alugubelli, H Liu, T Li, M Xu, Z Mei, Z He, ... IEEE Transactions on Electron Devices, 2023 | 6 | 2023 |
| External charge compensation in etched gallium nitride measured by x-ray photoelectron spectroscopy KA Hatch, DC Messina, H Fu, K Fu, Y Zhao, RJ Nemanich Journal of Applied Physics 131 (18), 2022 | 5 | 2022 |
| Challenges in atomic layer etching of gallium nitride using surface oxidation and ligand-exchange DC Messina, KA Hatch, S Vishwakarma, DJ Smith, Y Zhao, RJ Nemanich Journal of Vacuum Science & Technology A 41 (2), 2023 | 3 | 2023 |
| Plasma Enhanced Atomic Layer-etched and Regrown GaN-on-GaN High Power pn Diodes PR Peri, K Hatch, D Messina, K Fu, Y Zhao, R Nemanich, D Smith Microscopy and Microanalysis 26 (S2), 840-842, 2020 | 1 | 2020 |
| Atomic Layer Processing and Surface Properties of Gallium Nitride and Gallium Oxide KA Hatch Arizona State University, 2021 | | 2021 |
| High Temperature (500° C) GaN Based Threshold Switching Selectors for Memory Applications in Harsh Environments H Fu, K Fu, K Hatch, R Nemanich, Y Zhao 17th Meeting of the Venus Exploration Group (VEXAG) 17 (2193), 8004, 2019 | | 2019 |
| Synthesis of a novel photoreactive collagen-like peptide and its one and two-photon absorption properties A Ornelas, K Williams, K Hatch, A Paez, T Boland, C Li, K Michael ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY 253, 2017 | | 2017 |
| Two-photon photolysis of collagen mimicking peptide A Paez, K Hatch, A Ornelas, K Michael, C Li Bulletin of the American Physical Society 61, 2016 | | 2016 |
| Two-photon excitation based photochemistry and neural imaging KA Hatch The University of Texas at El Paso, 2016 | | 2016 |
