关注
Li Zhu
标题
引用次数
引用次数
年份
Nontoxic, eco‐friendly fully water‐induced ternary Zr–Gd–O dielectric for high‐performance transistors and unipolar inverters
L Zhu, G He, W Li, B Yang, E Fortunato, R Martins
Advanced Electronic Materials 4 (5), 1800100, 2018
802018
A photoelectric spiking neuron for visual depth perception
C Chen, Y He, H Mao, L Zhu, X Wang, Y Zhu, Y Zhu, Y Shi, C Wan, Q Wan
Advanced Materials 34 (20), 2201895, 2022
622022
Recent progress on emerging transistor‐based neuromorphic devices
Y He, L Zhu, Y Zhu, C Chen, S Jiang, R Liu, Y Shi, Q Wan
Advanced Intelligent Systems 3 (7), 2000210, 2021
622021
Indium–gallium–zinc–oxide thin-film transistors: Materials, devices, and applications
Y Zhu, Y He, S Jiang, L Zhu, C Chen, Q Wan
Journal of Semiconductors 42 (3), 031101, 2021
622021
Passivation of Ge surface treated with trimethylaluminum and investigation of electrical properties of HfTiO/Ge gate stacks
J Gao, G He, D Xiao, P Jin, S Jiang, W Li, S Liang, L Zhu
Journal of materials science & technology 33 (8), 901-906, 2017
562017
Fully solution-induced high performance indium oxide thin film transistors with ZrO x high-k gate dielectrics
L Zhu, G He, J Lv, E Fortunato, R Martins
RSC advances 8 (30), 16788-16799, 2018
552018
Eco-Friendly, Water-Induced In2O3 Thin Films for High-Performance Thin-Film Transistors and Inverters
L Zhu, G He, Y Long, B Yang, J Lv
IEEE Transactions on Electron Devices 65 (7), 2870-2876, 2018
412018
Synergistic modulation of synaptic plasticity in IGZO-based photoelectric neuromorphic TFTs
L Zhu, Y He, C Chen, Y Zhu, Y Shi, Q Wan
IEEE Transactions on Electron Devices 68 (4), 1659-1663, 2021
372021
Recent advances in emerging neuromorphic computing and perception devices
Y Zhu, Y Zhu, H Mao, Y He, S Jiang, L Zhu, C Chen, C Wan, Q Wan
Journal of Physics D: Applied Physics 55 (5), 053002, 2021
322021
Indium‐Gallium‐Zinc‐Oxide Based Photoelectric Neuromorphic Transistors for Modulable Photoexcited Corneal Nociceptor Emulation
S Ke, Y He, L Zhu, Z Jiang, H Mao, Y Zhu, C Wan, Q Wan
Advanced Electronic Materials 7 (11), 2100487, 2021
272021
Interface Modulation and Optimization of Electrical Properties of HfGdO/GaAs Gate Stacks by ALD‐Derived Al2O3 Passivation Layer and Forming Gas Annealing
S Jiang, G He, M Liu, L Zhu, S Liang, W Li, Z Sun, M Tian
Advanced Electronic Materials 4 (4), 1700543, 2018
272018
Solution-processed HfGdO gate dielectric thin films for CMOS application: Effect of annealing temperature
WD Li, G He, CY Zheng, S Liang, L Zhu, SS Jiang
Journal of Alloys and Compounds 731, 150-155, 2018
242018
High-Performance Amorphous InGaZnO Thin-Film Transistor Gated by HfAlOₓ Dielectric With Ultralow Subthreshold Swing
L Zhu, Y He, C Chen, X Wang, Y Zhu, Y Zhu, H Mao, C Wan, Q Wan
IEEE Transactions on Electron Devices 68 (12), 6154-6158, 2021
232021
Oxygen partial pressure ratio modulated electrical performance of amorphous InGaZnO thin film transistor and inverter
YC Zhang, G He, C Zhang, L Zhu, B Yang, QB Lin, XS Jiang
Journal of Alloys and Compounds 765, 791-799, 2018
222018
Vertically integrated spiking cone photoreceptor arrays for color perception
X Wang, C Chen, L Zhu, K Shi, B Peng, Y Zhu, H Mao, H Long, S Ke, C Fu, ...
Nature Communications 14 (1), 3444, 2023
212023
Photoelectric synapse based on InGaZnO nanofibers for high precision neuromorphic computing
Y Zhu, H Mao, Y Zhu, L Zhu, C Chen, X Wang, S Ke, C Fu, C Wan, Q Wan
IEEE Electron Device Letters 43 (4), 651-654, 2022
182022
A spiking stochastic neuron based on stacked InGaZnO memristors
H Mao, Y He, C Chen, L Zhu, Y Zhu, Y Zhu, S Ke, X Wang, C Wan, Q Wan
Advanced Electronic Materials 8 (2), 2100918, 2022
182022
Freestanding dual-gate oxide-based neuromorphic transistors for flexible artificial nociceptors
S Jiang, Y He, R Liu, C Chen, L Zhu, Y Zhu, Y Shi, Q Wan
IEEE Transactions on Electron Devices 68 (1), 415-420, 2020
162020
Low-Voltage-Operating Transistors and Logic Circuits Based on a Water-Driven ZrGdOx Dielectric with Low-Cost ZnSnO
B Yang, G He, L Zhu, C Zhang, Y Zhang, Y Xia, F Alam, Z Sun
ACS Applied Electronic Materials 1 (4), 625-636, 2019
162019
BCM learning rules emulated by a-IGZO-based photoelectronic neuromorphic transistors
S Ke, C Fu, X Lin, Y Zhu, H Mao, L Zhu, X Wang, C Chen, C Wan, Q Wan
IEEE Transactions on Electron Devices 69 (8), 4646-4650, 2022
152022
系统目前无法执行此操作,请稍后再试。
文章 1–20