| The 2018 GaN power electronics roadmap H Amano, Y Baines, E Beam, M Borga, T Bouchet, PR Chalker, M Charles, ... Journal of Physics D: Applied Physics 51 (16), 163001, 2018 | 1113 | 2018 |
| Silicon substrate removal of GaN DHFETs for enhanced (< 1100 V) breakdown voltage P Srivastava, J Das, D Visalli, J Derluyn, M Van Hove, PE Malinowski, ... IEEE Electron Device Letters 31 (8), 851-853, 2010 | 260 | 2010 |
| Forward bias gate breakdown mechanism in enhancement-mode p-GaN gate AlGaN/GaN high-electron mobility transistors TL Wu, D Marcon, S You, N Posthuma, B Bakeroot, S Stoffels, ... IEEE Electron device letters 36 (10), 1001-1003, 2015 | 193 | 2015 |
| AlGaN/GaN-based HEMTs failure physics and reliability: Mechanisms affecting gate edge and Schottky junction E Zanoni, M Meneghini, A Chini, D Marcon, G Meneghesso IEEE Transactions on Electron Devices 60 (10), 3119-3131, 2013 | 168 | 2013 |
| Record Breakdown Voltage (2200 V) of GaN DHFETs on Si With 2-Buffer Thickness by Local Substrate Removal P Srivastava, J Das, D Visalli, M Van Hove, PE Malinowski, D Marcon, ... IEEE Electron Device Letters 32 (1), 30-32, 2010 | 154 | 2010 |
| Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias M Meneghini, A Stocco, M Bertin, D Marcon, A Chini, G Meneghesso, ... Applied Physics Letters 100 (3), 2012 | 153 | 2012 |
| Low on-resistance high-breakdown normally off AlN/GaN/AlGaN DHFET on Si substrate F Medjdoub, J Derluyn, K Cheng, M Leys, S Degroote, D Marcon, D Visalli, ... IEEE electron device letters 31 (2), 111-113, 2010 | 141 | 2010 |
| Negative bias-induced threshold voltage instability in GaN-on-Si power HEMTs M Meneghini, I Rossetto, D Bisi, M Ruzzarin, M Van Hove, S Stoffels, ... IEEE Electron Device Letters 37 (4), 474-477, 2016 | 118 | 2016 |
| Kinetics of Buffer-Related RON-Increase in GaN-on-Silicon MIS-HEMTs D Bisi, M Meneghini, FA Marino, D Marcon, S Stoffels, M Van Hove, ... IEEE Electron Device Letters 35 (10), 1004-1006, 2014 | 115 | 2014 |
| A comprehensive reliability investigation of the voltage-, temperature-and device geometry-dependence of the gate degradation on state-of-the-art GaN-on-Si HEMTs D Marcon, T Kauerauf, F Medjdoub, J Das, M Van Hove, P Srivastava, ... 2010 International Electron Devices Meeting, 20.3. 1-20.3. 4, 2010 | 106 | 2010 |
| Trapping and reliability assessment in D-mode GaN-based MIS-HEMTs for power applications M Meneghini, D Bisi, D Marcon, S Stoffels, M Van Hove, TL Wu, ... IEEE Transactions on Power Electronics 29 (5), 2199-2207, 2013 | 101 | 2013 |
| Analysis of the gate capacitance–voltage characteristics in p-GaN/AlGaN/GaN heterostructures TL Wu, B Bakeroot, H Liang, N Posthuma, S You, N Ronchi, S Stoffels, ... IEEE Electron Device Letters 38 (12), 1696-1699, 2017 | 91 | 2017 |
| PBTI in GaN-HEMTs With p-Type Gate: Role of the Aluminum Content on and Underlying Degradation Mechanisms AN Tallarico, S Stoffels, N Posthuma, P Magnone, D Marcon, S Decoutere, ... IEEE Transactions on Electron Devices 65 (1), 38-44, 2017 | 88 | 2017 |
| Reliability analysis of permanent degradations on AlGaN/GaN HEMTs D Marcon, G Meneghesso, TL Wu, S Stoffels, M Meneghini, E Zanoni, ... IEEE Transactions on Electron Devices 60 (10), 3132-3141, 2013 | 88 | 2013 |
| Trapping mechanisms in GaN‐based MIS‐HEMTs grown on silicon substrate D Bisi, M Meneghini, M Van Hove, D Marcon, S Stoffels, TL Wu, ... physica status solidi (a) 212 (5), 1122-1129, 2015 | 87 | 2015 |
| GaN-on-SOI: Monolithically integrated all-GaN ICs for power conversion X Li, N Amirifar, K Geens, M Zhao, W Guo, H Liang, S You, N Posthuma, ... 2019 IEEE International Electron Devices Meeting (IEDM), 4.4. 1-4.4. 4, 2019 | 83 | 2019 |
| Trapping in GaN-based metal-insulator-semiconductor transistors: Role of high drain bias and hot electrons M Meneghini, D Bisi, D Marcon, S Stoffels, M Van Hove, TL Wu, ... Applied Physics Letters 104 (14), 2014 | 82 | 2014 |
| 200mm GaN-on-Si epitaxy and e-mode device technology D Marcon, YN Saripalli, S Decoutere 2015 IEEE International Electron Devices Meeting (IEDM), 16.2. 1-16.2. 4, 2015 | 76 | 2015 |
| Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors TL Wu, D Marcon, B Bakeroot, B De Jaeger, HC Lin, J Franco, S Stoffels, ... Applied Physics Letters 107 (9), 2015 | 73 | 2015 |
| Toward understanding positive bias temperature instability in fully recessed-gate GaN MISFETs TL Wu, J Franco, D Marcon, B De Jaeger, B Bakeroot, S Stoffels, ... IEEE Transactions on Electron Devices 63 (5), 1853-1860, 2016 | 71 | 2016 |
