| A 6-Bit CMOS Phase Shifter for-Band M Meghdadi, M Azizi, M Kiani, A Medi, M Atarodi IEEE Transactions on Microwave Theory and Techniques 58 (12), 3519-3526, 2010 | 101 | 2010 |
| A high data-rate energy-efficient interference-tolerant fully integrated CMOS frequency channelized UWB transceiver for impulse radio A Medi, W Namgoong IEEE Journal of Solid-State Circuits 43 (4), 974-980, 2008 | 84 | 2008 |
| A Fully Integrated 0.18- CMOS Transceiver Chip for -Band Phased-Array Systems K Gharibdoust, N Mousavi, M Kalantari, M Moezzi, A Medi IEEE Transactions on Microwave Theory and Techniques 60 (7), 2192-2202, 2012 | 83 | 2012 |
| A 40-GHz bandwidth tapered distributed LNA G Nikandish, A Medi IEEE Transactions on Circuits and Systems II: Express Briefs 65 (11), 1614-1618, 2017 | 66 | 2017 |
| A harmonic termination technique for single-and multi-band high-efficiency class-F MMIC power amplifiers G Nikandish, E Babakrpur, A Medi IEEE Transactions on Microwave Theory and Techniques 62 (5), 1212-1220, 2014 | 62 | 2014 |
| Transformer-feedback interstage bandwidth enhancement for MMIC multistage amplifiers G Nikandish, A Medi IEEE Transactions on Microwave Theory and Techniques 63 (2), 441-448, 2014 | 60 | 2014 |
| Unilateralization of MMIC distributed amplifiers G Nikandish, A Medi IEEE Transactions on Microwave Theory and Techniques 62 (12), 3041-3052, 2014 | 60 | 2014 |
| A broadband integrated class-J power amplifier in GaAs pHEMT technology A Alizadeh, A Medi IEEE Transactions on Microwave Theory and Techniques 64 (6), 1822-1830, 2016 | 44 | 2016 |
| Investigation of a class-J mode power amplifier in presence of a second-harmonic voltage at the gate node of the transistor A Alizadeh, A Medi IEEE Transactions on Microwave Theory and Techniques 65 (8), 3024-3033, 2017 | 42 | 2017 |
| Codesign of Ka-Band Integrated Limiter and Low Noise Amplifier P Mahmoudidaryan, A Medi IEEE Transactions on Microwave Theory and Techniques 64 (9), 2843-2852, 2016 | 42 | 2016 |
| Design of 6–18-GHz high-power amplifier in GaAs pHEMT technology M Meghdadi, A Medi IEEE Transactions on Microwave Theory and Techniques 65 (7), 2353-2360, 2017 | 39 | 2017 |
| A design procedure for high-efficiency and compact-size 5–10-W MMIC power amplifiers in GaAs pHEMT technology G Nikandish, A Medi IEEE transactions on microwave theory and techniques 61 (8), 2922-2933, 2013 | 39 | 2013 |
| Distributed class-J power amplifiers A Alizadeh, A Medi IEEE Transactions on Microwave Theory and Techniques 65 (2), 513-521, 2016 | 38 | 2016 |
| A fully integrated quad-band GPRS/EDGE radio in 0.13 μm CMOS H Darabi, A Zolfaghari, H Jensen, J Leete, B Mohammadi, J Chiu, T Li, ... 2008 IEEE International Solid-State Circuits Conference-Digest of Technical …, 2008 | 35 | 2008 |
| Dual-band design of integrated class-J power amplifiers in GaAs pHEMT technology A Alizadeh, M Frounchi, A Medi IEEE transactions on microwave theory and techniques 65 (8), 3034-3045, 2017 | 32 | 2017 |
| On design of wideband compact-size Ka/Q-band high-power amplifiers A Alizadeh, M Frounchi, A Medi IEEE Transactions on Microwave Theory and Techniques 64 (6), 1831-1842, 2016 | 32 | 2016 |
| Design of low-noise transimpedance amplifiers with capacitive feedback S Shahdoost, A Medi, N Saniei Analog Integrated Circuits and Signal Processing 86, 233-240, 2016 | 28 | 2016 |
| Design of a 2–12-GHz Bidirectional Distributed Amplifier in a 0.18- m CMOS Technology A Alizadeh, M Meghdadi, M Yaghoobi, A Medi IEEE Transactions on Microwave Theory and Techniques 67 (2), 754-764, 2018 | 27 | 2018 |
| Design and analysis of broadband Darlington amplifiers with bandwidth enhancement in GaAs pHEMT technology G Nikandish, A Medi IEEE transactions on microwave theory and techniques 62 (8), 1705-1715, 2014 | 27 | 2014 |
| Waveform engineering at gate node of class-J power amplifiers A Alizadeh, M Frounchi, A Medi IEEE Transactions on Microwave Theory and Techniques 65 (7), 2409-2417, 2017 | 26 | 2017 |
Amirreza AlizadehKeysight Technologies, UCSB在 ucsb.edu 的电子邮件经过验证
