| Toward h-BN/GaN Schottky diodes: spectroscopic study on the electronic phenomena at the interface E Zdanowicz, AP Herman, K Opołczyńska, S Gorantla, W Olszewski, ... ACS Applied Materials & Interfaces 14 (4), 6131-6137, 2022 | 16 | 2022 |
| Zn acceptor position in GaN: Zn probed by contactless electroreflectance spectroscopy Ł Janicki, MS Mohajerani, J Hartmann, E Zdanowicz, HH Wehmann, ... Applied Physics Letters 113 (3), 2018 | 14 | 2018 |
| As-related stability of the band gap temperature dependence in N-rich GaNAs E Zdanowicz, P Ciechanowicz, K Opolczynska, D Majchrzak, JG Rousset, ... Applied Physics Letters 115 (9), 2019 | 11 | 2019 |
| The influence of the photovoltaic effect on the surface electric field in GaN E Zdanowicz, AP Herman, R Kudrawiec Applied Surface Science 577, 151905, 2022 | 10 | 2022 |
| Arsenic‐Induced Growth of Dodecagonal GaN Microrods with Stable a‐Plane Walls P Ciechanowicz, S Gorantla, PP Michałowski, E Zdanowicz, JG Rousset, ... Advanced Optical Materials 9 (5), 2001348, 2021 | 10 | 2021 |
| Boron influence on bandgap and photoluminescence in BGaN grown on AlN E Zdanowicz, D Iida, L Pawlaczyk, J Serafinczuk, R Szukiewicz, ... Journal of Applied Physics 127 (16), 2020 | 10 | 2020 |
| Detailed surface studies on the reduction of Al incorporation into AlGaN grown by molecular beam epitaxy in the Ga-droplet regime D Majchrzak, S Gorantla, E Zdanowicz, A Pieniążek, J Serafińczuk, ... Vacuum 202, 111168, 2022 | 8 | 2022 |
| The influence of Fermi level position at the GaN surface on carrier transfer across the MAPbI 3/GaN interface E Zdanowicz, AP Herman, Ł Przypis, K Opołczyńska, J Serafińczuk, ... Physical Chemistry Chemical Physics 25 (24), 16492-16498, 2023 | 4 | 2023 |
| Influence of pulsed Al deposition on quality of Al-rich Al (Ga) N structures grown by molecular beam epitaxy D Majchrzak, M Grodzicki, K Moszak, E Zdanowicz, J Serafińczuk, ... Surfaces and Interfaces 27, 101560, 2021 | 4 | 2021 |
| Inhomogeneous broadening of optical transitions observed in photoluminescence and modulated reflectance of polar and non-polar InGaN quantum wells M Jarema, M Gładysiewicz, Ł Janicki, E Zdanowicz, H Turski, G Muzioł, ... Journal of Applied Physics 127 (3), 2020 | 3 | 2020 |
| Origin of Surface Barrier Temperature Dependence for the Polar GaN Surface E Zdanowicz, AP Herman, M Sobanska, ZR Zytkiewicz, W Olszewski, ... ACS Applied Electronic Materials 4 (10), 5017-5025, 2022 | 2 | 2022 |
| Band engineering in nitrogen-rich AlGaNAs quaternary alloys M Grodzicki, D Majchrzak, E Zdanowicz, C Benjamin, P Ciechanowicz, ... Vacuum 189, 110240, 2021 | 2 | 2021 |
| Competition between built-in polarization and p–n junction field in III-nitride heterostructures H Turski, M Chlipala, E Zdanowicz, E Rogowicz, G Muziol, J Moneta, ... Journal of Applied Physics 134 (24), 2023 | 1 | 2023 |
| On intrinsic Stokes shift in wide GaN/AlGaN polar quantum wells M Jarema, M Gladysiewicz, E Zdanowicz, E Bellet-Amalric, E Monroy, ... Semiconductor Science and Technology 34 (7), 075021, 2019 | 1 | 2019 |
| Revealing the TMA 2 SnI 4/GaN band alignment and carrier transfer across the interface E Zdanowicz, Ł Przypis, W Żuraw, M Grodzicki, M Chlipała, ... Journal of Materials Chemistry C, 2024 | | 2024 |
| Electronic properties of perovskite/GaN interface probed using contactless electroreflectance spectroscopy E Zdanowicz, AP Herman, Ł Przypis, K Opołczyńska, J Serafińczuk, ... Proceedings of Materials for Sustainable Development Conference (MAT-SUS)(NFM22), 2022 | | 2022 |
| Inhomogeneous broadening of direct optical transitions observed in photoluminescence and modulated reflectance in polar and non-polar InGaN quantum wells studied within the … M Jarema, M Gladysiewicz, L Janicki, E Zdanowicz, H Turski, G Muziol, ... arXiv preprint arXiv:1907.09465, 2019 | | 2019 |
