| Metalorganic chemical vapor phase epitaxy of crack-free GaN on Si (111) exceeding 1 µm in thickness A Dadgar, J Bläsing, A Diez, A Alam, M Heuken, A Krost Japanese Journal of Applied Physics 39 (11B), L1183, 2000 | 445 | 2000 |
| GaN-based optoelectronics on silicon substrates A Krost, A Dadgar Materials Science and Engineering: B 93 (1-3), 77-84, 2002 | 436 | 2002 |
| Gallium nitride vertical power devices on foreign substrates: a review and outlook Y Zhang, A Dadgar, T Palacios Journal of Physics D: Applied Physics 51 (27), 273001, 2018 | 271 | 2018 |
| Template‐assisted large‐scale ordered arrays of ZnO pillars for optical and piezoelectric applications HJ Fan, W Lee, R Hauschild, M Alexe, G Le Rhun, R Scholz, A Dadgar, ... Small 2 (4), 561-568, 2006 | 253 | 2006 |
| Thick, crack-free blue light-emitting diodes on Si(111) using low-temperature AlN interlayers and in situ masking A Dadgar, M Poschenrieder, J Bläsing, K Fehse, A Diez, A Krost Applied Physics Letters 80 (20), 3670-3672, 2002 | 242 | 2002 |
| GaN‐based devices on Si A Krost, A Dadgar physica status solidi (a) 194 (2), 361-375, 2002 | 238 | 2002 |
| High Si and Ge n-type doping of GaN doping-Limits and impact on stress S Fritze, A Dadgar, H Witte, M Bügler, A Rohrbeck, J Bläsing, A Hoffmann, ... Applied Physics Letters 100 (12), 2012 | 230 | 2012 |
| MOVPE growth of GaN on Si (1 1 1) substrates A Dadgar, M Poschenrieder, J Bläsing, O Contreras, F Bertram, ... Journal of Crystal Growth 248, 556-562, 2003 | 221 | 2003 |
| Arrays of vertically aligned and hexagonally arranged ZnO nanowires: a new template-directed approach HJ Fan, W Lee, R Scholz, A Dadgar, A Krost, K Nielsch, M Zacharias Nanotechnology 16 (6), 913, 2005 | 202 | 2005 |
| GaN‐based epitaxy on silicon: stress measurements A Krost, A Dadgar, G Strassburger, R Clos physica status solidi (a) 200 (1), 26-35, 2003 | 188 | 2003 |
| Recording of cell action potentials with AlGaN∕ GaN field-effect transistors G Steinhoff, B Baur, G Wrobel, S Ingebrandt, A Offenhäusser, A Dadgar, ... Applied Physics Letters 86 (3), 2005 | 184 | 2005 |
| Band gap renormalization and Burstein-Moss effect in silicon- and germanium-doped wurtzite GaN up to M Feneberg, S Osterburg, K Lange, C Lidig, B Garke, R Goldhahn, ... Physical Review B 90 (7), 075203, 2014 | 181 | 2014 |
| Atomic arrangement at the AlN/Si (111) interface R Liu, FA Ponce, A Dadgar, A Krost Applied Physics Letters 83 (5), 860-862, 2003 | 180 | 2003 |
| Epitaxy of GaN on silicon—impact of symmetry and surface reconstruction A Dadgar, F Schulze, M Wienecke, A Gadanecz, J Bläsing, P Veit, ... New Journal of Physics 9 (10), 389, 2007 | 172 | 2007 |
| High-sheet-charge–carrier-density AlInN∕ GaN field-effect transistors on Si (111) A Dadgar, F Schulze, J Bläsing, A Diez, A Krost, M Neuburger, E Kohn, ... Applied physics letters 85 (22), 5400-5402, 2004 | 170 | 2004 |
| The origin of stress reduction by low-temperature AlN interlayers J Bläsing, A Reiher, A Dadgar, A Diez, A Krost Applied physics letters 81 (15), 2722-2724, 2002 | 168 | 2002 |
| Growth of blue GaN LED structures on 150-mm Si (1 1 1) A Dadgar, C Hums, A Diez, J Bläsing, A Krost Journal of Crystal Growth 297 (2), 279-282, 2006 | 162 | 2006 |
| Well-ordered ZnO nanowire arrays on GaN substrate fabricated via nanosphere lithography HJ Fan, B Fuhrmann, R Scholz, F Syrowatka, A Dadgar, A Krost, ... Journal of Crystal Growth 287 (1), 34-38, 2006 | 155 | 2006 |
| Metal-organic vapor phase epitaxy and properties of AlInN in the whole compositional range C Hums, J Bläsing, A Dadgar, A Diez, T Hempel, J Christen, A Krost, ... Applied Physics Letters 90 (2), 2007 | 154 | 2007 |
| Efficient stress relief in GaN heteroepitaxy on Si (1 1 1) using low-temperature AlN interlayers A Reiher, J Bläsing, A Dadgar, A Diez, A Krost Journal of crystal growth 248, 563-567, 2003 | 152 | 2003 |
