| Nitrogen-passivated dielectric/InGaAs interfaces with sub-nm equivalent oxide thickness and low interface trap densities V Chobpattana, J Son, JJM Law, R Engel-Herbert, CY Huang, S Stemmer Applied Physics Letters 102 (2), 2013 | 107 | 2013 |
| Analysis of trap state densities at HfO2/In0. 53Ga0. 47As interfaces Y Hwang, R Engel-Herbert, NG Rudawski, S Stemmer Applied Physics Letters 96 (10), 2010 | 87 | 2010 |
| Fixed charge in high-k/GaN metal-oxide-semiconductor capacitor structures J Son, V Chobpattana, BM McSkimming, S Stemmer Applied Physics Letters 101 (10), 2012 | 82 | 2012 |
| Frequency dispersion in III-V metal-oxide-semiconductor capacitors S Stemmer, V Chobpattana, S Rajan Applied Physics Letters 100 (23), 2012 | 70 | 2012 |
| 0.5 V Supply Voltage Operation of In0.65Ga0.35As/GaAs0.4Sb0.6Tunnel FET B Rajamohanan, R Pandey, V Chobpattana, C Vaz, D Gundlach, ... IEEE Electron Device Letters 36 (1), 20-22, 2014 | 64 | 2014 |
| Record Ion(0.50 mA/µm at VDD= 0.5 V and Ioff= 100 nA/µm) 25 nm-gate-length ZrO2/InAs/InAlAs MOSFETs S Lee, V Chobpattana, CY Huang, BJ Thibeault, W Mitchell, S Stemmer, ... 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014 | 61 | 2014 |
| High performance raised source/drain InAs/In0. 53Ga0. 47As channel metal-oxide-semiconductor field-effect-transistors with reduced leakage using a vertical spacer S Lee, CY Huang, D Cohen-Elias, JJM Law, V Chobpattanna, S Krämer, ... Applied Physics Letters 103 (23), 2013 | 58 | 2013 |
| Arsenic decapping and pre-atomic layer deposition trimethylaluminum passivation of Al2O3/InGaAs (100) interfaces J Ahn, T Kent, E Chagarov, K Tang, AC Kummel, PC McIntyre Applied Physics Letters 103 (7), 2013 | 55 | 2013 |
| Demonstration of p-type In0.7Ga0.3As/GaAs0.35Sb0.65 and n-type GaAs0.4Sb0.6/In0.65Ga0.35As complimentary Heterojunction Vertical Tunnel FETs for … R Pandey, H Madan, H Liu, V Chobpattana, M Barth, B Rajamohanan, ... 2015 Symposium on VLSI Technology (VLSI Technology), T206-T207, 2015 | 54 | 2015 |
| Influence of gate metallization processes on the electrical characteristics of high-k/In0. 53Ga0. 47As interfaces GJ Burek, Y Hwang, AD Carter, V Chobpattana, JJM Law, WJ Mitchell, ... Journal of Vacuum Science & Technology B 29 (4), 2011 | 52 | 2011 |
| Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0. 53Ga0. 47As gate stack properties V Chobpattana, TE Mates, WJ Mitchell, JY Zhang, S Stemmer Journal of Applied Physics 114 (15), 2013 | 45 | 2013 |
| Highly scalable raised source/drain InAs quantum well MOSFETs exhibiting ION= 482 µ A/µ m at IOFF= 100 nA/µ m and VDD= 0.5 V S Lee, CY Huang, D Cohen-Elias, BJ Thibeault, W Mitchell, ... IEEE Electron Device Lett 35 (6), 621-623, 2014 | 44 | 2014 |
| The formation and utility of sub-angstrom to nanometer-sized electron probes in the aberration-corrected transmission electron microscope at the University of Illinois J Wen, J Mabon, C Lei, S Burdin, E Sammann, I Petrov, AB Shah, ... Microscopy and Microanalysis 16 (2), 183-193, 2010 | 43 | 2010 |
| Extremely scaled high-k/In0. 53Ga0. 47As gate stacks with low leakage and low interface trap densities V Chobpattana, E Mikheev, JY Zhang, TE Mates, S Stemmer Journal of Applied Physics 116 (12), 2014 | 33 | 2014 |
| Influence of trimethylaluminum on the growth and properties of HfO2/In0. 53Ga0. 47As interfaces Y Hwang, R Engel-Herbert, S Stemmer Applied Physics Letters 98 (5), 2011 | 33 | 2011 |
| Al-doped HfO2/In0. 53Ga0. 47As metal-oxide-semiconductor capacitors Y Hwang, V Chobpattana, JY Zhang, JM LeBeau, R Engel-Herbert, ... Applied Physics Letters 98 (14), 2011 | 32 | 2011 |
| Scaled ZrO2 dielectrics for In0. 53Ga0. 47As gate stacks with low interface trap densities V Chobpattana, TE Mates, JY Zhang, S Stemmer Applied Physics Letters 104 (18), 2014 | 31 | 2014 |
| Low Power III–V InGaAs MOSFETs featuring InP recessed source/drain spacers with Ion=120 µA/µm at Ioff=1 nA/µm and VDS=0.5 V CY Huang, S Lee, V Chobpattana, S Stemmer, AC Gossard, B Thibeault, ... 2014 IEEE International Electron Devices Meeting, 25.4. 1-25.4. 4, 2014 | 28 | 2014 |
| Record extrinsic transconductance (2.45 mS/µm at VDS= 0.5 V) InAs/In0.53Ga0.47As channel MOSFETs using MOCVD source-drain regrowth S Lee, CY Huang, AD Carter, DC Elias, JJM Law, V Chobpattana, ... 2013 Symposium on VLSI Technology, T246-T247, 2013 | 26 | 2013 |
| In-situ nitrogen plasma passivation of Al2O3/GaN interface states J Son, V Chobpattana, BM McSkimming, S Stemmer Journal of Vacuum Science & Technology A 33 (2), 2015 | 21 | 2015 |
Mark J.W. RodwellProfessor of Electrical and Computer Engineering, University of California, Santa Barbara在 ece.ucsb.edu 的电子邮件经过验证
