| A 3D vertical-channel ferroelectric/anti-ferroelectric FET with indium oxide Z Li, J Wu, X Mei, X Huang, T Saraya, T Hiramoto, T Takahashi, ... IEEE Electron Device Letters 43 (8), 1227-1230, 2022 | 32 | 2022 |
| Hot carrier effects in InGaZnO thin-film transistor T Takahashi, R Miyanaga, MN Fujii, J Tanaka, K Takechi, H Tanabe, ... Applied Physics Express 12 (9), 094007, 2019 | 28 | 2019 |
| Unique degradation under AC stress in high-mobility amorphous In–W–Zn–O thin-film transistors T Takahashi, MN Fujii, R Miyanaga, M Miyanaga, Y Ishikawa, Y Uraoka Applied Physics Express 13 (5), 054003, 2020 | 19 | 2020 |
| Development of high-reliability and-stability chemical sensors based on an extended-gate type amorphous oxide semiconductor thin-film transistor Y Hashima, T Takahashi, Y Ishikawa, Y Uraoka ACS Applied Electronic Materials 2 (2), 405-408, 2020 | 10 | 2020 |
| Improvement of Amorphous InGaZnO Thin‐Film Transistor Using High‐k SrTa2O6 as Gate Insulator Deposited by Sputtering Method T Takahashi, T Hoga, R Miyanaga, K Oikawa, MN Fujii, Y Ishikawa, ... physica status solidi (a) 216 (5), 1700773, 2019 | 5 | 2019 |
| SrTa2O6 induced low voltage operation of InGaZnO thin-film transistors T Takahashi, T Hoga, R Miyanaga, MN Fujii, Y Ishikawa, Y Uraoka, ... Thin Solid Films 665, 173-178, 2018 | 5 | 2018 |
| A nanosheet oxide semiconductor FET using ALD InGaOx channel and InSnOx electrode with normally-off operation, high mobility and reliability for 3D integrated devices K Hikake, Z Li, J Hao, C Pandy, T Saraya, T Hiramoto, T Takahashi, ... 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023 | 4 | 2023 |
| A Nanosheet Oxide Semiconductor FET Using ALD InGaOx Channel for 3-D Integrated Devices K Hikake, Z Li, J Hao, C Pandy, T Saraya, T Hiramoto, T Takahashi, ... IEEE Transactions on Electron Devices, 2024 | 2 | 2024 |
| Degradation due to photo-induced electron in Top-gate In-Ga-Zn-O Thin Film Transistors with n- region under Negative Bias Stress and Light Irradiation Y Takeda, T Takahashi, R Miyanaga, JPS Bermundo, Y Uraoka IEEE Electron Device Letters, 2023 | 2 | 2023 |
| A vertical channel ferroelectric/anti-ferroelectric FET with ALD InOx and field-induced polar-axis alignment for 3D high-density memory Z Li, J Wu, X Mei, X Huang, T Saraya, T Hiramoto, T Takahashi, ... 2022 IEEE Silicon Nanoelectronics Workshop (SNW), 1-2, 2022 | 2 | 2022 |
| Scaling Potential of Nanosheet Oxide Semiconductor FETs for Monolithic 3D Integration–ALD Material Engineering, High-Field Transport, Statistical Variability K Hikake, X Huang, SH Kim, K Sakai, Z Li, T Mizutani, T Saraya, ... 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2024 | 1 | 2024 |
| Intrinsic field-effect mobility in thin-film transistor with polycrystalline In2O3 channel based on transfer length method T Takahashi, Y Uraoka Applied Physics Express, 2024 | | 2024 |
| High-Field Transport and Statistical Variability of Nanosheet Oxide Semiconductor FETs With Channel Length Scaling X Huang, K Hikake, SH Kim, K Sakai, Z Li, T Mizutani, T Saraya, ... IEEE Transactions on Electron Devices, 2024 | | 2024 |
| Performance and Reliability of Nanosheet Oxide Semiconductor FETs with ALD-Grown InGaO for 3D Integration M Kobayashi, K Hikake, Z Li, J Hao, C Pandy, T Saraya, T Hiramoto, ... 2024 IEEE International Reliability Physics Symposium (IRPS), 9A. 1-1-9A. 1-6, 2024 | | 2024 |
| Invited; Ternary amorphous oxide semiconductor material toward 3D-integrated ferroelectric devices T Takahashi, M Uenuma, M Kobayashi, Y Uraoka | | 2023 |
| Thermally Stable Ternary Amorphous Oxide Semiconductors for HfO2-based Ferroelectric Field-Effect Transistor Memories T Takanori, U Mutsunori, K Masaharu, U Yukiharu Proceedings of the International Display Workshops, 226, 2022 | | 2022 |
| Carrier Control of In2O3 TFT Fabricated by Atomic Layer Deposition Y Kawato, M Uenuma, T Takahashi, Y Uraoka 2022 IEEE International Meeting for Future of Electron Devices, Kansai …, 2022 | | 2022 |
| Hot Carrier Effects in Oxide‐TFTs MN Fujii, T Takahashi, JPS Bermundo, Y Uraoka Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and …, 2022 | | 2022 |
| Investigation of NBIS Degradation Mechanism in Oxide TFT Assisted by Charge Trap Phenomena O Shunsuke, T Takanori, U Mutshunori, U Yukiharu Proceedings of the International Display Workshops, 205, 2021 | | 2021 |
| 29.1: Invited Paper: Degradation Mechanism of High Mobility Oxide Thin Film Transistors for Next Generation Display Y Uraoka, T Takahashi, M Fujii, JP Bermundo, R Miyanaga, M Uenuma SID Symposium Digest of Technical Papers 52, 395-398, 2021 | | 2021 |
