| The paradigm shift in understanding the bias temperature instability: From reaction–diffusion to switching oxide traps T Grasser, B Kaczer, W Goes, H Reisinger, T Aichinger, P Hehenberger, ... IEEE Transactions on Electron Devices 58 (11), 3652-3666, 2011 | 523 | 2011 |
| Origin of NBTI variability in deeply scaled pFETs B Kaczer, T Grasser, PJ Roussel, J Franco, R Degraeve, LA Ragnarsson, ... 2010 IEEE International Reliability Physics Symposium, 26-32, 2010 | 379 | 2010 |
| The time dependent defect spectroscopy (TDDS) for the characterization of the bias temperature instability T Grasser, H Reisinger, PJ Wagner, F Schanovsky, W Gös, B Kaczer 2010 IEEE international reliability physics symposium, 16-25, 2010 | 355 | 2010 |
| Analysis of NBTI degradation-and recovery-behavior based on ultra fast VT-measurements H Reisinger, O Blank, W Heinrigs, A Muhlhoff, W Gustin, C Schlunder 2006 IEEE International Reliability Physics Symposium Proceedings, 448-453, 2006 | 348 | 2006 |
| The statistical analysis of individual defects constituting NBTI and its implications for modeling DC-and AC-stress H Reisinger, T Grasser, W Gustin, C Schlünder 2010 IEEE International Reliability Physics Symposium, 7-15, 2010 | 266 | 2010 |
| Analytic modeling of the bias temperature instability using capture/emission time maps T Grasser, PJ Wagner, H Reisinger, T Aichinger, G Pobegen, M Nelhiebel, ... 2011 International Electron Devices Meeting, 27.4. 1-27.4. 4, 2011 | 218 | 2011 |
| Time-dependent defect spectroscopy for characterization of border traps in metal-oxide-semiconductor transistors T Grasser, H Reisinger, PJ Wagner, B Kaczer Physical Review B—Condensed Matter and Materials Physics 82 (24), 245318, 2010 | 179 | 2010 |
| Transient conduction in multidielectric silicon–oxide–nitride–oxide semiconductor structures H Bachhofer, H Reisinger, E Bertagnolli, H Von Philipsborn Journal of Applied Physics 89 (5), 2791-2800, 2001 | 178 | 2001 |
| Memory cell configuration and method for its fabrication H Reisinger, R Stengl, F Hofmann, W Krautschneider, J Willer US Patent 5,994,746, 1999 | 158 | 1999 |
| Review on SiC MOSFETs high-voltage device reliability focusing on threshold voltage instability K Puschkarsky, T Grasser, T Aichinger, W Gustin, H Reisinger IEEE Transactions on Electron Devices 66 (11), 4604-4616, 2019 | 156 | 2019 |
| Simultaneous extraction of recoverable and permanent components contributing to bias-temperature instability T Grasser, B Kaczer, P Hehenberger, W Gos, R O'Connor, H Reisinger, ... 2007 IEEE International Electron Devices Meeting, 801-804, 2007 | 152 | 2007 |
| Switching oxide traps as the missing link between negative bias temperature instability and random telegraph noise T Grasser, H Reisinger, W Goes, T Aichinger, P Hehenberger, PJ Wagner, ... 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 149 | 2009 |
| Recent advances in understanding the bias temperature instability T Grasser, B Kaczer, W Goes, H Reisinger, T Aichinger, P Hehenberger, ... 2010 international electron devices meeting, 4.4. 1-4.4. 4, 2010 | 134 | 2010 |
| A novel capacitor technology based on porous silicon V Lehmann, W Hönlein, H Reisinger, A Spitzer, H Wendt, J Willer Thin Solid Films 276 (1-2), 138-142, 1996 | 125 | 1996 |
| Understanding and modeling AC BTI H Reisinger, T Grasser, K Ermisch, H Nielen, W Gustin, C Schlünder 2011 International Reliability Physics Symposium, 6A. 1.1-6A. 1.8, 2011 | 119 | 2011 |
| On the microscopic structure of hole traps in pMOSFETs T Grasser, W Goes, Y Wimmer, F Schanovsky, G Rzepa, M Waltl, K Rott, ... 2014 IEEE International Electron Devices Meeting, 21.1. 1-21.1. 4, 2014 | 116 | 2014 |
| Optical shortpass filters based on macroporous silicon V Lehmann, R Stengl, H Reisinger, R Detemple, W Theiss Applied Physics Letters 78 (5), 589-591, 2001 | 114 | 2001 |
| A unified perspective of RTN and BTI T Grasser, K Rott, H Reisinger, M Waltl, J Franco, B Kaczer 2014 IEEE International Reliability Physics Symposium, 4A. 5.1-4A. 5.7, 2014 | 112 | 2014 |
| The ‘permanent’component of NBTI: Composition and annealing T Grasser, T Aichinger, G Pobegen, H Reisinger, PJ Wagner, J Franco, ... 2011 International Reliability Physics Symposium, 6A. 2.1-6A. 2.9, 2011 | 107 | 2011 |
| A comparison of very fast to very slow components in degradation and recovery due to NBTI and bulk hole trapping to existing physical models H Reisinger, O Blank, W Heinrigs, W Gustin, C Schlunder IEEE Transactions on Device and Materials Reliability 7 (1), 119-129, 2007 | 104 | 2007 |
