| Electrical characteristics of Au and Ag Schottky contacts on AY Polyakov, NB Smirnov, EA Kozhukhova, VI Vdovin, K Ip, YW Heo, ... Applied physics letters 83 (8), 1575-1577, 2003 | 237 | 2003 |
| Properties of Si donors and persistent photoconductivity in AlGaN AY Polyakov, NB Smirnov, AV Govorkov, MG Mil'Vidskii, JM Redwing, ... Solid-State Electronics 42 (4), 627-635, 1998 | 132 | 1998 |
| Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage AY Polyakov, NB Smirnov, IV Shchemerov, EB Yakimov, J Yang, F Ren, ... Applied Physics Letters 112 (3), 2018 | 122 | 2018 |
| Lateral power rectifiers with 9.7 kV reverse breakdown voltage AP Zhang, JW Johnson, F Ren, J Han, AY Polyakov, NB Smirnov, ... Applied Physics Letters 78 (6), 823-825, 2001 | 118 | 2001 |
| Studies of the origin of the yellow luminescence band, the nature of nonradiative recombination and the origin of persistent photoconductivity in n-GaN films AY Polyakov, NB Smirnov, AS Usikov, AV Govorkov, BV Pushniy Solid-State Electronics 42 (11), 1959-1967, 1998 | 118 | 1998 |
| Deep centers and their spatial distribution in undoped GaN films grown by organometallic vapor phase epitaxy AY Polyakov, NB Smirnov, AV Govorkov, M Shin, M Skowronski, ... Journal of applied physics 84 (2), 870-876, 1998 | 110 | 1998 |
| Proton implantation effects on electrical and recombination properties of undoped ZnO AY Polyakov, NB Smirnov, AV Govorkov, EA Kozhukhova, VI Vdovin, K Ip, ... Journal of applied physics 94 (5), 2895-2900, 2003 | 109 | 2003 |
| Electrical properties of bulk semi-insulating β-Ga2O3 (Fe) AY Polyakov, NB Smirnov, IV Shchemerov, SJ Pearton, F Ren, ... Applied Physics Letters 113 (14), 2018 | 104 | 2018 |
| Defects responsible for charge carrier removal and correlation with deep level introduction in irradiated β-Ga2O3 AY Polyakov, NB Smirnov, IV Shchemerov, EB Yakimov, SJ Pearton, ... Applied Physics Letters 113 (9), 2018 | 96 | 2018 |
| Hole traps and persistent photocapacitance in proton irradiated β-Ga2O3 films doped with Si AY Polyakov, NB Smirnov, IV Shchemerov, SJ Pearton, F Ren, ... Apl Materials 6 (9), 2018 | 95 | 2018 |
| Compensation and persistent photocapacitance in homoepitaxial Sn-doped β-Ga2O3 AY Polyakov, NB Smirnov, IV Shchemerov, D Gogova, SA Tarelkin, ... Journal of Applied Physics 123 (11), 2018 | 91 | 2018 |
| Electrical and optical properties of Cr and Fe implanted n-GaN AY Polyakov, NB Smirnov, AV Govorkov, NV Pashkova, AA Shlensky, ... Journal of Applied Physics 93 (9), 5388-5396, 2003 | 81 | 2003 |
| Effects of proton implantation on electrical and recombination properties of n-GaN AY Polyakov, AS Usikov, B Theys, NB Smirnov, AV Govorkov, F Jomard, ... Solid-State Electronics 44 (11), 1971-1983, 2000 | 81 | 2000 |
| Fast neutron irradiation effects in n-GaN AY Polyakov, NB Smirnov, AV Govorkov, AV Markov, SJ Pearton, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2007 | 80 | 2007 |
| Electrical and optical properties of Fe-doped semi-insulating GaN templates AY Polyakov, NB Smirnov, AV Govorkov, SJ Pearton Applied Physics Letters 83 (16), 3314-3316, 2003 | 78 | 2003 |
| Deep traps in high resistivity AlGaN films AY Polyakov, NB Smirnov, AV Govorkov, JM Redwing Solid-State Electronics 42 (5), 831-838, 1998 | 74 | 1998 |
| Optical and magnetic properties of ZnO bulk crystals implanted with Cr and Fe AY Polyakov, AV Govorkov, NB Smirnov, NV Pashkova, SJ Pearton, K Ip, ... Materials science in semiconductor processing 7 (1-2), 77-81, 2004 | 72 | 2004 |
| Hydrogen plasma treatment effects on electrical and optical properties of n-ZnO AY Polyakov, NB Smirnov, AV Govorkov, K Ip, ME Overberg, YW Heo, ... Journal of applied physics 94 (1), 400-406, 2003 | 70 | 2003 |
| Neutron irradiation effects on electrical properties and deep-level spectra in undoped n-AlGaN∕ GaN heterostructures AY Polyakov, NB Smirnov, AV Govorkov, AV Markov, SJ Pearton, ... Journal of applied physics 98 (3), 2005 | 67 | 2005 |
| Diffusion length of non-equilibrium minority charge carriers in β-Ga2O3 measured by electron beam induced current EB Yakimov, AY Polyakov, NB Smirnov, IV Shchemerov, J Yang, F Ren, ... Journal of Applied Physics 123 (18), 2018 | 66 | 2018 |
