Simon Fafard 个人学术档案 - 学术资源搜索

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Karin HinzerProfessor, School of Electrical Engineering and Computer Science, University of Ottawa在 uottawa.ca 的电子邮件经过验证
Z. R. WasilewskiElectrical and Computer Engineering & Waterloo Institute for Nanotechnology, University of Waterloo在 uwaterloo.ca 的电子邮件经过验证
Pawel HawrylakProfessor of Physics, University of Ottawa在 uottawa.ca 的电子邮件经过验证
Vincent AimezProfesseur, Université de Sherbrooke在 USherbrooke.ca 的电子邮件经过验证
Manfred BayerExperimentelle Physik 2, Fakultät Physik, TU Dortmund在 tu-dortmund.de 的电子邮件经过验证
Richard ArèsUniversité de Sherbrooke在 usherbrooke.ca 的电子邮件经过验证
Abdelatif Jaouad3IT, Université de Sherbrooke在 usherbrooke.ca 的电子邮件经过验证
John McCaffreyPhysicist, National Research Council of Canada在 nrc-cnrc.gc.ca 的电子邮件经过验证
Claudine Nì. AllenDépartement de physique, de génie physique et d'optique, COPL, Université Laval在 phy.ulaval.ca 的电子邮件经过验证
Maxime DarnonCNRS-Laboratoire Hubert Curien在 univ-st-etienne.fr 的电子邮件经过验证
Marek KorkusinskiNational Research Council of Canada在 nrc-cnrc.gc.ca 的电子邮件经过验证
Abderraouf BoucherifUniversité de Sherbrooke在 usherbrooke.ca 的电子邮件经过验证
Artur TuralaUniversité de Sherbrooke在 usherbrooke.ca 的电子邮件经过验证
Philip PooleNational Research Council在 nrc-cnrc.gc.ca 的电子邮件经过验证
Boussairi BouzaziInstitute of Technological Innovation, University of Sherbrooke在 usherbrooke.ca 的电子邮件经过验证
Arkadiusz WójsWroclaw University of Science and Technology在 pwr.edu.pl 的电子邮件经过验证
Trevor James HallProfessor, School of Electrical Engineering & Computer Science, University of Ottawa在 uottawa.ca 的电子邮件经过验证
Michael SpannerNational Research Council of Canada在 nrc.ca 的电子邮件经过验证
John BowersProfessor of Electrical and Computer Engineering, UCSB在 ece.ucsb.edu 的电子邮件经过验证
Paola BorriProfessor at Cardiff University在 cf.ac.uk 的电子邮件经过验证

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Simon Fafard

Professor of Electrical Engineering, Universite de Sherbrooke

在 usherbrooke.ca 的电子邮件经过验证 - 首页

III-V semiconductors Epitaxy optoelectronics photovoltaics nanostructures


标题按引用次数排序按年份排序按标题排序	引用次数引用次数	年份
Fine structure of neutral and charged excitons in self-assembled In (Ga) As/(Al) GaAs quantum dots M Bayer, G Ortner, O Stern, A Kuther, AA Gorbunov, A Forchel, ... Physical Review B 65 (19), 195315, 2002	1438	2002
Coupling and entangling of quantum states in quantum dot molecules M Bayer, P Hawrylak, K Hinzer, S Fafard, M Korkusinski, ZR Wasilewski, ... Science 291 (5503), 451-453, 2001	1041	2001
Hidden symmetries in the energy levels of excitonic ‘artificial atoms’ M Bayer, O Stern, P Hawrylak, S Fafard, A Forchel Nature 405 (6789), 923-926, 2000	559	2000
Size and shape engineering of vertically stacked self-assembled quantum dots ZR Wasilewski, S Fafard, JP McCaffrey Journal of crystal growth 201, 1131-1135, 1999	495	1999
Electronic structure and magneto-optics of self-assembled quantum dots A Wojs, P Hawrylak, S Fafard, L Jacak Physical Review B 54 (8), 5604, 1996	480	1996
Quantum dot infrared photodetectors HC Liu, M Gao, J McCaffrey, ZR Wasilewski, S Fafard Applied Physics Letters 78 (1), 79-81, 2001	406	2001
Red-emitting semiconductor quantum dot lasers S Fafard, K Hinzer, S Raymond, M Dion, J McCaffrey, Y Feng, ... Science 274 (5291), 1350-1353, 1996	396	1996
State filling and time-resolved photoluminescence of excited states in As/GaAs self-assembled quantum dots S Raymond, S Fafard, PJ Poole, A Wojs, P Hawrylak, S Charbonneau, ... Physical Review B 54 (16), 11548, 1996	319	1996
Time‐resolved optical characterization of InGaAs/GaAs quantum dots G Wang, S Fafard, D Leonard, JE Bowers, JL Merz, PM Petroff Applied physics letters 64 (21), 2815-2817, 1994	311	1994
Spatially resolved visible luminescence of self-assembled semiconductor quantum dots R Leon, PM Petroff, D Leonard, S Fafard Science 267 (5206), 1966-1968, 1995	282	1995
Phonons and radiative recombination in self-assembled quantum dots S Farfad, R Leon, D Leonard, JL Merz, PM Petroff Physical Review B 52 (8), 5752, 1995	275	1995
Manipulating the energy levels of semiconductor quantum dots S Fafard, ZR Wasilewski, CN Allen, D Picard, M Spanner, JP McCaffrey, ... Physical Review B 59 (23), 15368, 1999	267	1999
Molecular‐beam epitaxy growth of quantum dots from strained coherent uniform islands of InGaAs on GaAs D Leonard, M Krishnamurthy, S Fafard, JL Merz, PM Petroff Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1994	245	1994
InAs self‐assembled quantum dots on InP by molecular beam epitaxy S Fafard, Z Wasilewski, J McCaffrey, S Raymond, S Charbonneau Applied Physics Letters 68 (7), 991-993, 1996	244	1996
Selective excitation of the photoluminescence and the energy levels of ultrasmall InGaAs/GaAs quantum dots S Fafard, D Leonard, JL Merz, PM Petroff Applied physics letters 65 (11), 1388-1390, 1994	227	1994
Intermixing in quantum-dot ensembles with sharp adjustable shells S Fafard, CN Allen Applied physics letters 75 (16), 2374-2376, 1999	224	1999
Passive integrated optics elements based on long-range surface plasmon polaritons R Charbonneau, C Scales, I Breukelaar, S Fafard, N Lahoud, G Mattiussi, ... Journal of Lightwave Technology 24 (1), 477-494, 2006	213	2006
Visible luminescence from semiconductor quantum dots in large ensembles R Leon, S Fafard, D Leonard, JL Merz, PM Petroff Applied physics letters 67 (4), 521-523, 1995	207	1995
Exciton transport in O: Evidence for excitonic superfluidity? E Fortin, S Fafard, A Mysyrowicz Physical review letters 70 (25), 3951, 1993	198	1993
Visible photoluminescence from N-dot ensembles and the linewidth of ultrasmall Al y In 1− y As/Al x Ga 1− x As quantum dots S Fafard, R Leon, D Leonard, JL Merz, PM Petroff Physical Review B 50 (11), 8086, 1994	189	1994

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