| Artificial Synapse Based on Oxygen Vacancy Migration in Ferroelectric‐Like C‐Axis‐Aligned Crystalline InGaSnO Semiconductor Thin‐Film Transistors for Highly Integrated … T Lim, S Lee, J Lee, HJ Choi, B Jung, SH Baek, J Jang Advanced Functional Materials 33 (8), 2212367, 2023 | 10 | 2023 |
| Artificial Synaptic InGaZnO Thin-Film Transistor With Long Retention Behavior Using Al2O3/SiO2 Gate Insulator T Lim, J Bae, B Han, A Ali, J Jang IEEE Transactions on Electron Devices 70 (1), 135-139, 2022 | 7 | 2022 |
| Reduced dynamic gate pulse stress instability in dual gate a-InGaZnO thin film transistors S Priyadarshi, MM Billah, T Lim, SS Urmi, J Jang IEEE Electron Device Letters 44 (3), 428-431, 2023 | 5 | 2023 |
| Large‐Area Growth of Ferroelectric 2D γ‐In2Se3 Semiconductor by Spray Pyrolysis for Next‐Generation Memory T Lim, JH Lee, D Kim, J Bae, S Jung, SM Yang, JI Jang, J Jang Advanced Materials 36 (4), 2308301, 2024 | 2 | 2024 |
| Multifunctional crystalline InGaSnO phototransistor exhibiting photosensing and photosynaptic behavior using oxygen vacancy engineering T Lim, J Lee, DY Woo, JY Kwak, J Jang Small Methods 7 (9), 2300251, 2023 | 2 | 2023 |
| Transistors with ferroelectric ZrXAl1−XOY crystallized by ZnO growth for multi-level memory and neuromorphic computing MM Islam, A Ali, C Park, T Lim, DY Woo, JY Kwak, J Jang Communications Materials 5 (1), 51, 2024 | 1 | 2024 |
