| Room temperature pulsed laser deposited indium gallium zinc oxide channel based transparent thin film transistors A Suresh, P Wellenius, A Dhawan, J Muth Applied physics letters 90 (12), 123512, 2007 | 216 | 2007 |
| Transparent, high mobility InGaZnO thin films deposited by PLD A Suresh, P Gollakota, P Wellenius, A Dhawan, JF Muth Thin Solid Films 516 (7), 1326-1329, 2008 | 165 | 2008 |
| Transparent indium gallium zinc oxide transistor based floating gate memory with platinum nanoparticles in the gate dielectric A Suresh, S Novak, P Wellenius, V Misra, JF Muth Applied Physics Letters 94 (12), 123501, 2009 | 128 | 2009 |
| Fast all-transparent integrated circuits based on indium gallium zinc oxide thin-film transistors A Suresh, P Wellenius, V Baliga, H Luo, LM Lunardi, JF Muth IEEE Electron Device Letters 31 (4), 317-319, 2010 | 98 | 2010 |
| Optical characterization of Eu-doped thin films P Gollakota, A Dhawan, P Wellenius, LM Lunardi, JF Muth, YN Saripalli, ... Applied physics letters 88 (22), 221906, 2006 | 73 | 2006 |
| Bright, low voltage europium doped gallium oxide thin film electroluminescent devices P Wellenius, A Suresh, JF Muth Applied Physics Letters 92 (2), 021111, 2008 | 72 | 2008 |
| A visible transparent electroluminescent europium doped gallium oxide device P Wellenius, A Suresh, JV Foreman, HO Everitt, JF Muth Materials Science and Engineering: B 146 (1-3), 252-255, 2008 | 67 | 2008 |
| Transparent IGZO-based logic gates H Luo, P Wellenius, L Lunardi, JF Muth IEEE Electron Device Letters 33 (5), 673-675, 2012 | 61 | 2012 |
| Optimal composition of europium gallium oxide thin films for device applications P Wellenius, ER Smith, SM LeBoeuf, HO Everitt, JF Muth Journal of Applied Physics 107 (10), 103111, 2010 | 34 | 2010 |
| Origins of parasitic emissions from 353 nm AlGaN-based ultraviolet light emitting diodes over SiC substrates JS Park, DW Fothergill, P Wellenius, SM Bishop, JF Muth, RF Davis Japanese journal of applied physics 45 (5R), 4083, 2006 | 25 | 2006 |
| High performance transparent thin film transistors based on indium gallium zinc oxide as the channel material A Suresh, P Wellenius, JF Muth Electron Devices Meeting, 2007. IEDM 2007. IEEE International, 587-590, 2007 | 24 | 2007 |
| An Amorphous Indium–Gallium–Zinc–Oxide Active Matrix Electroluminescent Pixel P Wellenius, A Suresh, H Luo, LM Lunardi, JF Muth Journal of Display Technology 5 (12), 438-445, 2009 | 23 | 2009 |
| Spectra and energy levels of Eu3+ in cubic phase Gd2O3 ER Smith, JB Gruber, P Wellenius, JF Muth, HO Everitt physica status solidi (b) 247 (7), 1807-1813, 2010 | 16 | 2010 |
| Fabrication of a GaN p/n lateral polarity junction by polar doping selectivity R Collazo, S Mita, A Rice, R Dalmau, P Wellenius, J Muth, Z Sitar physica status solidi (c) 5 (6), 1977-1979, 2008 | 15 | 2008 |
| Planar ZnO ultraviolet modulator XY Zhang, A Dhawan, P Wellenius, A Suresh, JF Muth Applied Physics Letters 91 (7), 071107, 2007 | 12 | 2007 |
| Optimization of InGaAs metamorphic buffers for triple junction solar cells CW Ebert, CL Reynolds, P Wellenius, JG Reynolds, JF Muth, Z Pulwin, ... Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE, 000469-000473, 2011 | 7 | 2011 |
| Iv-vi and iii-v quantum dot structures in a v-vi matrix JC Caylor, IP Wellenius, WO Charles, P Cantu, AL Gray US Patent App. 14/517,345, 2015 | 4 | 2015 |
| The potential of wide band-gap semiconductor materials in laser-induced semiconductor switches DJ Phillips, ER Smith, H Luo, P Wellenius, JF Muth, JV Foreman, ... Terahertz Physics, Devices, and Systems III: Advanced Applications in …, 2009 | 4 | 2009 |
| Effect of oxygen pressure on the structure and luminescence of Eu‐doped Gd2O3 thin films P Wellenius, ER Smith, PC Wu, HO Everitt, JF Muth physica status solidi (a) 207 (8), 1949-1953, 2010 | 3 | 2010 |
| Nitrogen Doping and Ion Beam Processing of Zinc Oxide Thin Films IP Wellenius | 3 | 2006 |
John MuthNorth Carolina State University在 ncsu.edu 的电子邮件经过验证
