| Recent issues in negative-bias temperature instability: Initial degradation, field dependence of interface trap generation, hole trapping effects, and relaxation AE Islam, H Kufluoglu, D Varghese, S Mahapatra, MA Alam IEEE Transactions on Electron Devices 54 (9), 2143-2154, 2007 | 392* | 2007 |
| A comprehensive model for PMOS NBTI degradation: Recent progress MA Alam, H Kufluoglu, D Varghese, S Mahapatra Microelectronics Reliability 47 (6), 853-862, 2007 | 376 | 2007 |
| On the generation and recovery of interface traps in MOSFETs subjected to NBTI, FN, and HCI stress S Mahapatra, D Saha, D Varghese, PB Kumar IEEE Transactions on Electron Devices 53 (7), 1583-1592, 2006 | 229 | 2006 |
| On the physical mechanism of NBTI in silicon oxynitride p-MOSFETs: Can differences in insulator processing conditions resolve the interface trap generation versus hole trapping … S Mahapatra, K Ahmed, D Varghese, AE Islam, G Gupta, L Madhav, ... 2007 IEEE International Reliability Physics Symposium Proceedings. 45th …, 2007 | 156 | 2007 |
| On the dispersive versus Arrhenius temperature activation of NBTI time evolution in plasma nitrided gate oxides: Measurements, theory, and implications D Varghese, D Saha, S Mahapatra, K Ahmed, F Nouri, M Alam IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005 | 143 | 2005 |
| off-State Degradation in Drain-Extended NMOS Transistors: Interface Damage and Correlation to Dielectric Breakdown D Varghese, H Kufluoglu, V Reddy, H Shichijo, D Mosher, S Krishnan, ... IEEE Transactions on Electron Devices 54 (10), 2669-2678, 2007 | 83 | 2007 |
| Negative bias temperature instability in CMOS devices S Mahapatra, MA Alam, PB Kumar, TR Dalei, D Varghese, D Saha Microelectronic engineering 80, 114-121, 2005 | 73 | 2005 |
| Hole energy dependent interface trap generation in MOSFET Si/SiO/sub 2/interface D Varghese, S Mahapatra, MA Alam IEEE electron device letters 26 (8), 572-574, 2005 | 65 | 2005 |
| ON-state hot carrier degradation in drain-extended NMOS transistors D Varghese, P Moens, MA Alam IEEE transactions on electron devices 57 (10), 2704-2710, 2010 | 47 | 2010 |
| Critical analysis of short-term negative bias temperature instability measurements: Explaining the effect of time-zero delay for on-the-fly measurements AE Islam, H Kufluoglu, D Varghese, MA Alam Applied Physics Letters 90 (8), 2007 | 44 | 2007 |
| A generalized, IB-independent, physical HCI lifetime projection methodology based on universality of hot-carrier degradation D Varghese, MA Alam, B Weir 2010 IEEE International Reliability Physics Symposium, 1091-1094, 2010 | 43 | 2010 |
| Multi-probe interface characterization of In0.65Ga0.35As/Al2O3 MOSFET D Varghese, Y Xuan, YQ Wu, T Shen, PD Ye, MA Alam 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 39 | 2008 |
| Theory of breakdown position determination by voltage-and current-ratio methods MA Alam, D Varghese, B Kaczer IEEE Transactions on Electron Devices 55 (11), 3150-3158, 2008 | 37 | 2008 |
| Role of anode hole injection and valence band hole tunneling on interface trap generation during hot carrier injection stress D Saha, D Varghese, S Mahapatra IEEE electron device letters 27 (7), 585-587, 2006 | 28 | 2006 |
| Universality of off-state degradation in drain extended NMOS transistors D Varghese, H Kufluoglu, V Reddy, H Shichijo, S Krishnan, MA Alam 2006 International Electron Devices Meeting, 1-4, 2006 | 27 | 2006 |
| OFF-state degradation and correlated gate dielectric breakdown in high voltage drain extended transistors: A review D Varghese, V Reddy, S Krishnan, MA Alam Microelectronics Reliability 54 (8), 1477-1488, 2014 | 26 | 2014 |
| A comprehensive analysis of off-state stress in drain extended PMOS transistors: Theory and characterization of parametric degradation and dielectric failure D Varghese, V Reddy, H Shichijo, D Mosher, S Krishnan, MA Alam 2008 IEEE International Reliability Physics Symposium, 566-574, 2008 | 26 | 2008 |
| The origin of broad distribution of breakdown times in polycrystalline thin film dielectrics M Masuduzzaman, S Xie, J Chung, D Varghese, J Rodriguez, S Krishnan, ... Applied Physics Letters 101 (15), 2012 | 24 | 2012 |
| Towards a universal model for hot carrier degradation in DMOS transistors P Moens, D Varghese, M Alam 2010 22nd International Symposium on Power Semiconductor Devices & IC's …, 2010 | 24 | 2010 |
| The role of dielectric heating and effects of ambient humidity in the electrical breakdown of polymer dielectrics S Palit, D Varghese, H Guo, S Krishnan, MA Alam IEEE Transactions on Device and Materials Reliability 15 (3), 308-318, 2015 | 22 | 2015 |
Muhammad Ashraful AlamJai N. Gupta Professor of Electrical Engineering, Purdue University在 purdue.edu 的电子邮件经过验证
