| 600-V Normally Off /AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse Z Tang, Q Jiang, Y Lu, S Huang, S Yang, X Tang, KJ Chen IEEE Electron Device Letters 34 (11), 1373-1375, 2013 | 282 | 2013 |
| High-Quality Interface in Al₂O₃/GaN/AlGaN/GaN MIS Structures With In Situ Pre-Gate Plasma Nitridation S Yang, Z Tang, KY Wong, YS Lin, C Liu, Y Lu, S Huang, KJ Chen IEEE Electron Device Letters 34 (12), 1497 - 1499, 2013 | 186* | 2013 |
| AC-capacitance techniques for interface trap analysis in GaN-based buried-channel MIS-HEMTs S Yang, S Liu, Y Lu, C Liu, KJ Chen IEEE Transactions on Electron Devices 62 (6), 1870-1878, 2015 | 107 | 2015 |
| Low on-resistance normally-off GaN double-channel metal–oxide–semiconductor high-electron-mobility transistor J Wei, S Liu, B Li, X Tang, Y Lu, C Liu, M Hua, Z Zhang, G Tang, KJ Chen IEEE Electron Device Letters 36 (12), 1287-1290, 2015 | 92 | 2015 |
| Mapping of interface traps in high-performance Al2O3/AlGaN/GaN MIS-heterostructures using frequency- and temperature-dependent C-V techniques S Yang, Z Tang, KY Wong, YS Lin, Y Lu, S Huang, KJ Chen Electron Devices Meeting (IEDM), 2013 IEEE International, 6.3. 1-6.3. 4, 2013 | 92* | 2013 |
| Characterization of VT-instability in enhancement-mode Al2O3-AlGaN/GaN MIS-HEMTs Y Lu, S Yang, Q Jiang, Z Tang, B Li, KJ Chen physica status solidi (c) 10 (11), 1397-1400, 2013 | 89 | 2013 |
| 1.4-kV AlGaN/GaN HEMTs on a GaN-on-SOI Platform Q Jiang, C Liu, Y Lu, KJ Chen IEEE Electron Device Letters 34 (3), 357 - 359, 2013 | 69 | 2013 |
| Surface nitridation for improved dielectric/III‐nitride interfaces in GaN MIS‐HEMTs KJ Chen, S Yang, Z Tang, S Huang, Y Lu, Q Jiang, S Liu, C Liu, B Li physica status solidi (a) 212 (5), 1059-1065, 2015 | 59 | 2015 |
| Enhancement-mode GaN double-channel MOS-HEMT with low on-resistance and robust gate recess J Wei, S Liu, B Li, X Tang, Y Lu, C Liu, M Hua, Z Zhang, G Tang, KJ Chen 2015 IEEE International Electron Devices Meeting (IEDM), 9.4. 1-9.4. 4, 2015 | 55 | 2015 |
| High-temperature low-damage gate recess technique and ozone-assisted ALD-grown Al2O3gate dielectric for high-performance normally-off GaN MIS-HEMTs S Huang, Q Jiang, K Wei, G Liu, J Zhang, X Wang, Y Zheng, B Sun, ... 2014 IEEE International Electron Devices Meeting, 17.4. 1-17.4. 4, 2014 | 53 | 2014 |
| Dynamic Gate Stress-InducedShift and Its Impact on Dynamicin GaN MIS-HEMTs S Yang, Y Lu, H Wang, S Liu, C Liu, KJ Chen IEEE Electron Device Letters 37 (2), 157-160, 2015 | 48 | 2015 |
| Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT M Hua, Y Lu, S Liu, C Liu, K Fu, Y Cai, B Zhang, KJ Chen IEEE Electron Device Letters 37 (3), 265-268, 2016 | 39 | 2016 |
| Thermally induced threshold voltage instability of III-nitride MIS-HEMTs and MOSC-HEMTs: Underlying mechanisms and optimization schemes S Yang, S Liu, C Liu, Z Tang, Y Lu, KJ Chen 2014 IEEE International Electron Devices Meeting, 17.2. 1-17.2. 4, 2014 | 37 | 2014 |
| Investigation of SiNx and AlN Passivation for AlGaN/GaN High-Electron-Mobility Transistors: Role of Interface Traps and Polarization Charges S Yang, Z Tang, M Hua, Z Zhang, J Wei, Y Lu, KJ Chen IEEE Journal of the Electron Devices Society 8, 358-364, 2020 | 26 | 2020 |
| III-Nitride transistors with photonic-ohmic drain for enhanced dynamic performances X Tang, B Li, Y Lu, H Wang, C Liu, J Wei, KJ Chen 2015 IEEE International Electron Devices Meeting (IEDM), 35.3. 1-35.3. 4, 2015 | 26 | 2015 |
| Mechanisms of thermally induced threshold voltage instability in GaN-based heterojunction transistors S Yang, S Liu, C Liu, Y Lu, KJ Chen Applied Physics Letters 105 (22), 223508, 2014 | 25 | 2014 |
| Characterization of SiNx/AlN passivation stack with epitaxial AlN grown on AlGaN/GaN heterojunctions by plasma-enhanced atomic layer deposition Y Lu, Q Jiang, Z Tang, S Yang, C Liu, KJ Chen Applied Physics Express 8 (6), 064101, 2015 | 23 | 2015 |
| A High-Voltage Low-Standby-Power Startup Circuit Using Monolithically Integrated E/D-Mode AlGaN/GaN MIS-HEMTs Q Jiang, Z Tang, C Liu, Y Lu, KJ Chen IEEE Transactions on Electron Devices 61 (3), 762-768, 2014 | 22 | 2014 |
| Normally off AlO–AlGaN/GaN MIS-HEMT With Transparent Gate Electrode for Gate Degradation Investigation Y Lu, B Li, X Tang, Q Jiang, S Yang, Z Tang, KJ Chen IEEE Transactions on Electron Devices 62 (3), 821-827, 2015 | 20 | 2015 |
| Trapping mechanisms in insulated‐gate GaN power devices: Understanding and characterization techniques S Yang, S Liu, Y Lu, KJ Chen physica status solidi (a) 214 (3), 1600607, 2017 | 13 | 2017 |
