| Correlation between dislocations and leakage current of pn diodes on a free-standing GaN substrate S Usami, Y Ando, A Tanaka, K Nagamatsu, M Deki, M Kushimoto, S Nitta, ... Applied Physics Letters 112 (18), 2018 | 186 | 2018 |
| Molten KOH etching with Na2O2 additive for dislocation revelation in 4H-SiC epilayers and substrates YZ Yao, Y Ishikawa, Y Sugawara, H Saitoh, K Danno, H Suzuki, Y Kawai, ... Japanese journal of applied physics 50 (7R), 075502, 2011 | 57 | 2011 |
| Transmission electron microscopy analysis of a threading dislocation with c+ a Burgers vector in 4H-SiC Y Sugawara, M Nakamori, YZ Yao, Y Ishikawa, K Danno, H Suzuki, ... Applied physics express 5 (8), 081301, 2012 | 47 | 2012 |
| X-ray diffraction and Raman characterization of β-Ga2O3 single crystal grown by edge-defined film-fed growth method Y Yao, Y Ishikawa, Y Sugawara Journal of Applied Physics 126 (20), 2019 | 44 | 2019 |
| Revelation of dislocations in HVPE GaN single crystal by KOH etching with Na2O2 additive and cathodoluminescence mapping Y Yao, Y Ishikawa, Y Sugawara, D Yokoe, M Sudo, N Okada, K Tadatomo Superlattices and Microstructures 99, 83-87, 2016 | 37 | 2016 |
| Observation of Threading Dislocations in Ammonothermal Gallium Nitride Single Crystal Using Synchrotron X-ray Topography Y Yao, Y Ishikawa, Y Sugawara, Y Takahashi, K Hirano Journal of Electronic Materials 47 (9), 5007-5012, 2018 | 34 | 2018 |
| Identification of Burgers vectors of dislocations in monoclinic β-Ga2O3 via synchrotron x-ray topography Y Yao, Y Sugawara, Y Ishikawa Journal of Applied Physics 127, 205110, 2020 | 32 | 2020 |
| Expansion of a single Shockley stacking fault in a 4H-SiC (112¯ 0) epitaxial layer caused by electron beam irradiation Y Ishikawa, M Sudo, YZ Yao, Y Sugawara, M Kato Journal of Applied Physics 123 (22), 2018 | 31 | 2018 |
| Revelation of Dislocations in β‐Ga2O3 Substrates Grown by Edge‐Defined Film‐Fed Growth Y Yao, Y Ishikawa, Y Sugawara physica status solidi (a) 217 (3), 1900630, 2020 | 28 | 2020 |
| Comparison of slicing-induced damage in hexagonal SiC by wire sawing with loose abrasive, wire sawing with fixed abrasive, and electric discharge machining Y Ishikawa, YZ Yao, Y Sugawara, K Sato, Y Okamoto, N Hayashi, B Dierre, ... Japanese Journal of Applied Physics 53 (7), 071301, 2014 | 28 | 2014 |
| Observation of dislocations in β-Ga2O3 single-crystal substrates by synchrotron X-ray topography, chemical etching, and transmission electron microscopy Y Yao, Y Sugawara, Y Ishikawa Japanese Journal of Applied Physics 59 (4), 045502, 2020 | 27 | 2020 |
| Characterization of threading dislocations in GaN (0001) substrates by photoluminescence imaging, cathodoluminescence mapping and etch pits Y Yao, Y Ishikawa, M Sudo, Y Sugawara, D Yokoe Journal of Crystal Growth 468, 484-488, 2017 | 25 | 2017 |
| Slip planes in monoclinic β-Ga2O3 revealed from its {010} face via synchrotron X-ray diffraction and X-ray topography Y Yao, Y Ishikawa, Y Sugawara Japanese Journal of Applied Physics 59 (12), 125501, 2020 | 22 | 2020 |
| Growth of N-Polar Aluminum Nitride on Vicinal Sapphire Substrates and Aluminum Nitride Bulk Substrates T Isono, T Ito, R Sakamoto, Y Yao, Y Ishikawa, N Okada, K Tadatomo PSSBR 257 (4), 1900588, 2020 | 22 | 2020 |
| Correlation between etch pits formed by molten KOH+ Na2O2 etching and dislocation types in heavily doped n+-4H–SiC studied by X-ray topography Y Yao, Y Ishikawa, Y Sugawara, K Sato, K Danno, H Suzuki, T Bessho, ... Journal of crystal growth 364, 7-10, 2013 | 22 | 2013 |
| Growth of colorless transparent GaN single crystals on prismatic GaN seeds using a Ga melt and Na vapor T Yamada, H Yamane, Y Yao, M Yokoyama, T Sekiguchi Materials Research Bulletin 44 (3), 594-599, 2009 | 21 | 2009 |
| Dislocation revelation from (0001) carbon-face of 4H-SiC by using vaporized KOH at high temperature YZ Yao, Y Ishikawa, K Sato, Y Sugawara, K Danno, H Suzuki, T Bessho Applied physics express 5 (7), 075601, 2012 | 19 | 2012 |
| Mg diffusion and activation along threading dislocations in GaN W Yi, A Kumar, J Uzuhashi, T Kimura, R Tanaka, S Takashima, M Edo, ... Applied Physics Letters 116 (24), 2020 | 17 | 2020 |
| Correlation between structural properties and nonradiative recombination behaviors of threading dislocations in freestanding GaN substrates grown by hydride vapor phase epitaxy Y Yao, Y Sugawara, D Yokoe, K Sato, Y Ishikawa, N Okada, K Tadatomo, ... CrystEngComm 22 (48), 8299-8312, 2020 | 17 | 2020 |
| Growth and Characterization of Nitrogen-Polar AlGaN/AlN Heterostructure for High-Electron-Mobility Transistor T Ito, R Sakamoto, T Isono, Y Yao, Y Ishikawa, N Okada, K Tadatomo PSSBR 257 (4), 1900589, 2020 | 14 | 2020 |
Takashi SekiguchiFaculty of Pure & Applied Sciences, Univ. Tsukuba在 u.tsukuba.ac.jp 的电子邮件经过验证
